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Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 Q017b32 32fi I SHGK PRELIMINARY KM616V513 CMOS SRAM 32,768 W O RD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 17, 20, 25n s (M ax.) • Low Pow er D issipation	OCR Scan	PDF	Q017b32 KM616V513 GG17b40 400mil)
Untitled Abstract: No abstract text available Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A c c e ss Time : 17, 20, 25ns(max.) • Low Power Dissipation Standby (TTL) 3mA (max.) . (CMOS) : 100juA (max.) Operating KM616V513-17	OCR Scan	PDF	KM616V513 100juA KM616V513-17 KM616V513-20 KM616V513-25 KM616V513 D01fl554
Untitled Abstract: No abstract text available Text: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation	OCR Scan	PDF	KM616V513 KM616V513J-17 130mA KM616V513J-20 120mA KM616V513J-25: 110mA l/09-l/0 KM616V513J: 40-Pin
SOJ 44 Abstract: 1MX1 KM6865 Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001	OCR Scan	PDF	KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865
Untitled Abstract: No abstract text available Text: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns(max.) ■ Low Power Dissipation Standby OTL) 3mA (max.) (CMOS) : 100,« A (max.) Operating KM616V513-17 :130m A (max.)	OCR Scan	PDF	KM616V513 KM616V513-17 KM616V513-20 KM616V513-25 110mA KM616V513J 40-Pin 400mil) KM616V513 288-bit
t538 Abstract: No abstract text available Text: PRELIMINARY KM616V513 CMOS SRAM 32,768 WORDx 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation Standby (TTL) 3mA (Max.) (CMOS) 100 „A (Max.) Operating K M 616V513J-17:130m A (Max.)	OCR Scan	PDF	KM616V513 616V513J-17 616V513J-20 616V513J-25 KM616V513J: 40-Pin 616V513is 288-bit 400mil) t538
KMCJ532512 Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7	OCR Scan	PDF	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
KM68512 Abstract: 12BKX8 km6865b Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs	OCR Scan	PDF	010/J/T KM68512 12BKX8 km6865b