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    KMA010P20Q Datasheets (1)

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    KMA010P20Q Korea Electronics P-Ch Trench MOSFET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It’s mainly suitable for battery pack or power management in cell phone, and PDA. H FEATURES T G P D VDSS=-20V, ID=-10A. L Drain-Source ON Resistance. : RDS ON =14m (Max.) @ VGS=-4.5V, ID=-10A.


    Original
    PDF KMA010P20Q

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES 2007. 3. 22 Revision No : 1 1/5


    Original
    PDF KMA010P20Q

    KMA010P20Q

    Abstract: RD10
    Text: SEMICONDUCTOR KMA010P20Q TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES H T VDSS=-20V, ID=-10A. P D L G Drain-Source ON Resistance. : RDS ON =14m (Max.) @ VGS=-4.5V, ID=-10A.


    Original
    PDF KMA010P20Q KMA010P20Q RD10

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS