KMB012N30Q
Abstract: KMB012N
Text: SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T G P D L FEATURES VDSS=30V, ID=12A.
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KMB012N30Q
KMB012N30Q
KMB012N
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T G P D L FEATURES VDSS=30V, ID=12A.
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KMB012N30Q
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KMB012N
Abstract: 30QA KMB012N30QA
Text: SEMICONDUCTOR KMB012N30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.
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KMB012N30QA
100us
100ms
Fig11.
KMB012N
30QA
KMB012N30QA
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M3024
Abstract: 012N40 KMB012N40DA
Text: SEMICONDUCTOR KMB012N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB012N40DA
Fig10.
Fig11.
Fig12.
M3024
012N40
KMB012N40DA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. H T G P D L FEATURES ・VDSS=30V, ID=12A.
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KMB012N30Q
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KMB012N
Abstract: KMB012N30Q
Text: SEMICONDUCTOR KMB012N30Q TECHNICAL DATA N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for power management in PC, portable equipment and battery powered systems. H T G P D L FEATURES VDSS=30V, ID=12A.
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KMB012N30Q
KMB012N
KMB012N30Q
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB012N30QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.
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KMB012N30QA
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KMB012N40DA
Abstract: No abstract text available
Text: SEM ICONDUCTOR KMB012N40DA TECHNI CAL DATA N-Ch Trench MOSFET G eneral Description This Trench M OSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e DIM MILLIMETERS
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KMB012N40DA
KMB012N40DA
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