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    KMM366S1 Search Results

    KMM366S1 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM366S104CT-GH Samsung Electronics 1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S104CT-GL Samsung Electronics 1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S104CTL-G0 Samsung Electronics 1M x 64 SDRAM DIMM based on 1M x 16, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S1623AT Samsung Electronics 16M x 64 SDRAM DIMM Scan PDF
    KMM366S1623AT-G0 Samsung Electronics 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Scan PDF
    KMM366S1623AT-G2 Samsung Electronics 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Scan PDF
    KMM366S1623AT-G8 Samsung Electronics 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Scan PDF
    KMM366S1623BT Samsung Electronics PC100 SDRAM MODULE Scan PDF
    KMM366S1623BT-G8 Samsung Electronics PC100 SDRAM module. 125 MHz, 8 ns speed Scan PDF
    KMM366S1623BT-GH Samsung Electronics PC100 SDRAM module. 100 MHz, 10 ns speed Scan PDF
    KMM366S1623BT-GL Samsung Electronics PC100 SDRAM module. 100 MHz, 10 ns speed Scan PDF
    KMM366S1623BTL Samsung Electronics PC66 SDRAM Module Scan PDF
    KMM366S1623BTL-G0 Samsung Electronics PC100 SDRAM MODULE Scan PDF
    KMM366S1623BTL-G0 Samsung Electronics S Scan PDF
    KMM366S1623BTL-GO Samsung Electronics S Scan PDF
    KMM366S1623CT Samsung Electronics PC100 SDRAM MODULE Original PDF
    KMM366S1623CT-C1H Samsung Electronics 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S1623CT-C1L Samsung Electronics 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S1623CT-C80 Samsung Electronics 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM366S1623CT-G8 Samsung Electronics 16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF

    KMM366S1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC66 SDRAM MODULE KMM366S1723TL KMM366S1723TL SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1723TL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1723TL consists of eight CMOS 16M x 8 bit with


    Original     		KMM366S1723TL KMM366S1723TL 16Mx64 16Mx8, 400mil 168-pin PDF

    KMM366S1723BTS-GA

    Abstract: No abstract text available
    Text: KMM366S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Aug., 1999 • PC133 first published. REV. 0 Aug. 1999 KMM366S1723BTS PC133 Unbuffered DIMM KMM366S1723BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		KMM366S1723BTS PC133 KMM366S1723BTS 16Mx64 16Mx8, KMM366S1723BTS-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1723TS PC100 Unbuffered DIMM Revision History Revision 0.0 Mar. 25, 1999 Revision 0.1 (May. 24, 1999) - Changed "Detail C" in PCB Dimension. Rev.0.1 May 1999 PC100 Unbuffered DIMM KMM366S1723TS KMM366S1723TS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		KMM366S1723TS PC100 KMM366S1723TS 16Mx64 16Mx8, 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 Unbuffered DIMM KMM366S1723ATS Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM366S1723ATS PC100 118DIA 000DIA 16Mx8 KM48S16030AT PDF

    KMM366S1723T-G8

    Abstract: KMM366S1723T-GH KMM366S1723T-GL
    Text: KMM366S1723T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM366S1723T PC100 SDRAM MODULE KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		KMM366S1723T PC100 KMM366S1723T 16Mx64 16Mx8, 400mil KMM366S1723T-G8 KMM366S1723T-GH KMM366S1723T-GL PDF

    KM48S8030BT-G10

    Abstract: KM48S803 KMM366S1623BTL KMM366S1623BTL-G0
    Text: KMM366S1623BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		KMM366S1623BTL 200mV. 66MHz KM48S8030BT-G10 KM48S803 KMM366S1623BTL KMM366S1623BTL-G0 PDF

    KMM366S1723T-G8

    Abstract: KMM366S1723T-GH KMM366S1723T-GL
    Text: KMM366S1723T Preliminary PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package Dimensions is revised. REV. 1 July 1998 Preliminary PC100 SDRAM MODULE KMM366S1723T KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		KMM366S1723T PC100 KMM366S1723T 16Mx64 16Mx8, 400mil KMM366S1723T-G8 KMM366S1723T-GH KMM366S1723T-GL PDF

    KMM366S1623CT-GL

    Abstract: KMM366S1623CT KMM366S1623CT-G8 KMM366S1623CT-GH
    Text: Preliminary PC100 SDRAM MODULE KMM366S1623CT KMM366S1623CT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PC100 KMM366S1623CT KMM366S1623CT 16Mx64 400mil 168-pin KMM366S1623CT-GL KMM366S1623CT-G8 KMM366S1623CT-GH PDF

    KMM366S1623DTL

    Abstract: KMM366S1623DTL-G0
    Text: KMM366S1623DTL PC66 Unbuffered DIMM Revision History Revision 0.0 July 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM366S1623DTL KM48S8030DT KMM366S1623DTL KMM366S1623DTL-G0 PDF

    KM48S8020

    Abstract: KMM366S1603BTL-G0
    Text: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		KMM366S1603BTL 200mV. 66MHz KM48S8020 KMM366S1603BTL-G0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM366S1723T_PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S1723T KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    OCR Scan     		KMM366S1723T_ PC100 KMM366S1723T KMM366S1723T 16Mx64 16Mx8, 1723T 366S1723T-G PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam­


    OCR Scan     		KMM366S1654AT PC100 KMM366S1654AT 16Mx64 16Mx16, M366S1654AT-G8 125MHz 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.


    OCR Scan     		KMM366S104CT PC100 2K/32ms 4K/64ms. KMM366S104CT 1Mx64 1Mx16, PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S1654ATS KMM366S1654ATS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654ATS is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam ­


    OCR Scan     		PC100 KMM366S1654ATS KMM366S1654ATS 16Mx64 16Mx16, 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW JEDEC SDRAM MODULE KMM366S1620AT KMM366S1620AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx4, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1620AT is a 16M bit x 64 Synchronous - Performance range Max Freq. Speed


    OCR Scan     		KMM366S1620AT KMM366S1620AT 16Mx64 16Mx4, 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V


    OCR Scan     		KMM366S1623BT PC100 KM48S8030BT PDF

    3b2 spd

    Abstract: No abstract text available
    Text: NEW JEDEC SDRAM MODULE KMM366S1603AT KMM366S1603AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1603AT is a 16M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S1603AT KMM366S1603AT 16Mx64 400mil 168-pin GD37MMD 3b2 spd PDF

    CI373

    Abstract: KMM366S104BTN-G2 kmm366s104
    Text: KMM366S104BTN NEW JEDEC SDRAM MODULE KMM366S104BTN SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1Q4BTN is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S104BTN KMM366S104BTN 1Mx64 1Mx16, KMM366S1Q4BTN 400mil 168-pin CI373 KMM366S104BTN-G2 kmm366s104 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		KMM366S1623BT PC100 KMM366S162top 150Max KM48S8030BT PDF

    KMM366S1623BT-GL

    Abstract: No abstract text available
    Text: KMM366S1623BT PC100 SDRAM MODULE KMM366S1623BT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S1623BT KMM366S1623BT PC100 16Mx64 400mil 168-pin KMM366S1623BT-GL PDF

    km48s8030bt

    Abstract: KMM366S1623BTL KMM366S1623BTL-G0
    Text: PC66 SDRAM MODULE KMM366S1623BTL Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.


    OCR Scan     		KMM366S1623BTL 200mV. KMM366S1623Brite KM48S8030BT km48s8030bt KMM366S1623BTL KMM366S1623BTL-G0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM366S1724T_ PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S1724T KMM366S1724T SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    OCR Scan     		KMM366S1724T_ PC100 KMM366S1724T KMM366S1724T 16Mx64 8Mx16, 1724T 3661724T-G PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.


    OCR Scan     		KMM366S104CTL 200mV. 2K/32ms 4K/64ms. KMM366S104CTL 1Mx64 1Mx16, 54Max) PDF

    KMM366S1623BT

    Abstract: KMM366S1623BT-G8 KMM366S1623BT-GH KMM366S1623BT-GL
    Text: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. llL(lnputs) : ± 5uA to ± 1 u A , I il (DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V d d = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		KMM366S1623BT PC100 KM48S8030BT KMM366S1623BT KMM366S1623BT-G8 KMM366S1623BT-GH KMM366S1623BT-GL PDF