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    Samsung Semiconductor KMM591000BN-6

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    Samsung Semiconductor KMM591000A-7

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    Samsung Semiconductor KMM591000A-10

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    Samsung Semiconductor KMM591000AN-7

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    Samsung Semiconductor KMM591000BN-7

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    KMM591000 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM591000-10 Samsung Electronics 1 M x 9 DRAM SIP and SIMM Memory Modules Scan PDF
    KMM591000-12 Samsung Electronics 1 M x 9 DRAM SIP and SIMM Memory Modules Scan PDF

    KMM591000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM41C1000

    Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
    Text: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		KMM491000/KMM591000 KMM491000 KMM591000 KM41C1000 20-pin 22/i/F R0286 30-pin simm memory 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12 PDF

    KMM591000BN-6

    Abstract: kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KM44C1000BJ KMM591000BN KMM591000B
    Text: KMM591000BN DRAM MODULES 1MX9 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tu e tcAc I rc KMM591000BN-6 60ns 15ns 110ns KMM591000BN-7 70ns 20 ns 130ns KMM591000BN-8 80ns 20 ns 150ns The KMM591000BN is a Single In-line Memory Module


    OCR Scan     		KMM591000BN KMM591000BN-6 KMM591000BN-7 KMM591000BN-8 110ns 130ns 150ns KMM591000BN KM44C1000BJ kmm591000bn7 KMM591000BN6 KMM591000BN8 1Mx9 DRAM 30-pin SIMM KMM591000B PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns PDF

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


    OCR Scan     		1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM PDF

    KM41C1000AJ-1M

    Abstract: km41c1000aj KMM591000N
    Text: KMM591000N DRAM MODULES 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM591000N is a 1M bit x 9 D ynam ic RAM high de nsity m em ory m odule. The Sam sung K M M 5 9 1 0 0 0 N c o n s is t o f tw o 4M b it D R A M s


    OCR Scan     		KMM591000N KMM591000N KM44C1000J-1M 20-pin KM41C1000AJ-1M 30-pin KMM591000N-8 KMM591000N-10 km41c1000aj PDF

    KMM591000A

    Abstract: KMM491000A-10 KMM491000A-8 30-pin simm memory
    Text: SAMSUNG SEMICONDUCTOR INC S3E D 7^4145 KMM491000A/KMM591000A 0Q0ÔS31 4 I MEMORY MODULES 1 M x 9 DRAM SIP and S IM M Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate 0 , Q and CAS for Parity


    OCR Scan     		KMM491000A/KMM591000A KMM491000A KMM591000A KM41C1000AJ 20-pin 7Tb4142 M491OOOA/KMM591OOOA KMM591000 KMM491000A KMM491000A-10 KMM491000A-8 30-pin simm memory PDF

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj PDF

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


    OCR Scan     		KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 PDF

    KM41C1000AJ

    Abstract: KM41C1000 KMM591000
    Text: MEMORY MODULES KMM491000A/KMM591000A 1 M x 9 DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION _ • 1,048,576 x 9-bit Organization • Ninth device has separate D, Q and CAS or Parity applications. • Performance range: The Samsung KMM491000A and KMM591000A are


    OCR Scan     		KMM491000A/KMM591000A KMM491000A-8 KMM591000A-8 KMM491000A-10 KMM591000A-10 100ns 150ns 180ns KM41C1000AJ KM41C1000 KMM591000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM SUNG E L E C T R O N I C S INC b7E D O D I S Ö E T StB KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM591000C is a 1M b i t x 9 Dynamic RAM high density memory module The S a m s u n g


    OCR Scan     		KMM591000C KMM591000C 591000C 1000C 20-pin 30-pin 110ns KMM591000C-7 130ns KMM591000C-8 PDF

    KMM591000C8

    Abstract: KMM591000C KMM591000C7 KMM591000C-7
    Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		KMM591000C 110ns 130ns 150ns KMM591000C KM41C1000C 20-pin 30-pin KMM591000C8 KMM591000C7 KMM591000C-7 PDF

    M5916

    Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
    Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~KMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5


    OCR Scan     		11Mx9 KMM581000C KMM584Q0 KMM594000C-5 HKMM58100 KMM591000CN-7 M584Q00C-6 jKMM59400QC-6 KMM533100 KMM5361000C2/C2G M5916 533410 M5402 KMM591000CN-7 KMM5334100 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » 7 ^ 4 1 4 2 OOlSDfit 22Ì I SMGK • KMM591000BN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591000BN KMM591000BN KM44C1000BJ 20-pin KM41C1000CJ 30-pin 110ns KMM591000BN-7 PDF

    KM41C1000

    Abstract: KMM591000
    Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		KMM491000 KMM591000 KM41C1000 20-pin R0286 PDF

    KMM591000AN8

    Abstract: KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A
    Text: FUNCTION GUIDE 1. Introduction 1.1 Dynamic RAM di SAMSUNG Electronics 11 FUNCTION GUIDE ’ New Product eg SAMSUNG Electronics 12 FUNCTION GUIDE 1.2 Dynamic RAM Module CMOS T- 1M x8 - KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10


    OCR Scan     		KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10 KMM584000A-7 KMM584000A-8 KMM584000A-10 KMM594000A-7 KMM591000AN8 KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A PDF

    KMM591000B7

    Abstract: KMM591000B-7 KMM591000B6 KMM591000B
    Text: KMM591000B DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 9 1 0 0 0 B is a 1 M bit X 9 Dynamic RAM high density m em ory module. The Samsung K M M 5 9 10OOB consist o t nine K M 4 1C 10OOBJ DRAMs


    OCR Scan     		KMM591000B 10OOB 10OOBJ 20-pin 30-pin KMM591OOOB- 591000B- KMM591000B7 KMM591000B-7 KMM591000B6 KMM591000B PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D B 7^4142 KMM5910Q0B GülQ42b 7 QSMÛK DRAM MODULES 1 M X 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: T he Samsung K M M 5 9 1 0 0 0 B is a 1 M b it X 9 Dynamic RAM high de nsity m em ory module. - The Samsung


    OCR Scan     		KMM5910Q0B lQ42b KM41C1OOOBJ 20-pin 30-pin 591000B- 130ns 150ns PDF

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


    OCR Scan     		KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM PDF

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" PDF

    KM44C1000

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14


    OCR Scan     		KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000 PDF

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


    OCR Scan     		KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80 PDF

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM591000CN dram simm memory module samsung 30-pin 44C1000CJ KMM591000
    Text: DRAM MODULE 1 Mega Byte KMM591OOOCN Fast Page Mode 1Mx9 DRAM SIMM , 1K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM591 OOOCN is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOCN consists of two CMOS • Performance Range:


    OCR Scan     		KMM591OOOCN KMM591 20-pin 30-pin KMM591000CN 1Mx9 DRAM 30-pin SIMM dram simm memory module samsung 30-pin 44C1000CJ KMM591000 PDF

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


    OCR Scan     		KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble PDF