GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 100 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400
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Original
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PDF
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TB0640H
TB4000H
10/1000us
8/20us
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB4000H
|
GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400
|
Original
|
PDF
|
TB0640H
TB4000H
10/1000us
8/20us
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB4000H
|
TB400
Abstract: TB4000H GR-1089-CORE TB0640H TB0720H TB0900H TB1100H TB1300H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
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Original
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PDF
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TB0640H
TB4000H
10/1000us
8/20us
29-April-2003,
KSWB04
TB400
TB4000H
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 100 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
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Original
|
PDF
|
TB0640H
TB4000H
10/1000us
8/20us
|
GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB3500H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
|
Original
|
PDF
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TB0640H
TB3500H
10/1000us
8/20us
26-Oct-2001,
KSWB04
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB3500H
|
GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB3500H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @
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Original
|
PDF
|
TB0640H
TB3500H
10/1000us
8/20us
07-May-2001,
KSWB04
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB3500H
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