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    KTA1266 TRANSISTOR Search Results

    KTA1266 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KTA1266 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTA1266 transistor

    Abstract: KTA1266. transistor KTA1266 GR KTA1266 transistor kta1266 kta1266 Y
    Text: KTA1266 KTA1266 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF KTA1266 -150mA -100mA, -10mA KTA1266 transistor KTA1266. transistor KTA1266 GR KTA1266 transistor kta1266 kta1266 Y

    KTA1266

    Abstract: KTA1266GR kta1266y
    Text: KTA1266 -0.15A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 Excellent hFE Linearity Low Noise Complementary to KTC3198 CLASSIFICATION OF hFE 1


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    PDF KTA1266 KTC3198 KTA1266-O KTA1266-Y KTA1266-GR 18-Dec-2012 -150mA -100mA, -10mA KTA1266 KTA1266GR kta1266y

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTC3198 TRANSISTOR NPN 1.EMITTER FEATURES z General Purpose Switching Application z Complementary to KTA1266. 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF KTC3198 KTA1266. 150mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTC3198.


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    PDF KTA1266 -150mA KTC3198. Temperat50

    KTC3198

    Abstract: transistor KTC3198 KTC3198 transistor KTA1266 GR 41BL KTA1266 xk30
    Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ᴌComplementary to KTA1266.


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    PDF KTC3198 150mA KTA1266. 270Hz KTC3198 transistor KTC3198 KTC3198 transistor KTA1266 GR 41BL KTA1266 xk30

    transistor KTC3198

    Abstract: KTC3198 KTA1266 ktc3198 transistor KTA1266. transistor ktc3198 gr kta1266 Y
    Text: SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTA1266.


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    PDF KTC3198 150mA KTA1266. 100mA, 30MHz transistor KTC3198 KTC3198 KTA1266 ktc3198 transistor KTA1266. transistor ktc3198 gr kta1266 Y

    KTA1266

    Abstract: KTA1266 GR transistor KTC3198 KTC3198 Transistor KTA1266
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ᴌComplementary to KTC3198.


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    PDF KTA1266 -150mA KTC3198. KTA1266 KTA1266 GR transistor KTC3198 KTC3198 Transistor KTA1266

    KTA1266 transistor

    Abstract: KTA1266
    Text: WEITRON KTA1266 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Excellent hFE Linearity •� Low noise TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage


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    PDF KTA1266 04-Oct-2010 270TYP KTA1266 transistor KTA1266

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR PNP TO-92 FEATURES z Excellent hFE Linearity z Low Noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


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    PDF KTA1266 KTC3198 -150mA -100mA, -10mA

    KTA1266

    Abstract: KTA1266 GR KTC3198 KTA1266 transistor transistor kta1266
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR PNP TO-92 FEATURES z Excellent hFE Linearity z Low noise z Complementary to KTC3198 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF KTA1266 KTC3198 -150mA -100mA, -10mA KTA1266 KTA1266 GR KTC3198 KTA1266 transistor transistor kta1266

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz.


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    PDF KTA1266 -150mA KTC3198. -100mA, -10mA 30MHz

    KTA1266

    Abstract: transistor KTC3198 KTC3198
    Text: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA N : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). K Complementary to KTC3198.


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    PDF KTA1266 -150mA KTC3198. Temperat30 KTA1266 transistor KTC3198 KTC3198

    KTC3198

    Abstract: KTA1266 KTA1266 GR TO92 LOW VCE PNP KTA1266 Y
    Text: KTA1266 PNP TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity Low noise Complementary to KTC3198 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage


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    PDF KTA1266 KTC3198 -100A, -150mA -100mA, -10mA KTA1266 GR TO92 LOW VCE PNP KTA1266 Y

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTA1266 TRANSISTOR( PNP ) TO—92 FEATURE Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V BR CBO : -50 V Operating and storage junction temperature range


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    PDF KTA1266 30MHz 270TYP 050TYP

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    transistor cross reference

    Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
    Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER


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    PDF OT-23 S9011 S9012 S9013 S9014 S9015 S9016 S9018 S8050 S8550 transistor cross reference transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent

    2sc3198

    Abstract: 2SC3198 equivalent transistor 2SC3198 KTA1266 GR KTA1266 transistor KTA1266
    Text: 2SC3198 EPITAXIAL PLANAR NPN TRANSISTOR C B A GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION N FEATURES Excellent h FE Linearity :h FE 2 =100(Typ.) at V CE =6V, I C =150mA :h FE (I C =0.1mA)/h FE (I C =2mA)=0.95(Typ.) Low Noise:NF=IdB(Typ.) at f=1kHz


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    PDF 2SC3198 150mA KTA1266 2sc3198 2SC3198 equivalent transistor 2SC3198 KTA1266 GR KTA1266 transistor

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    Untitled

    Abstract: No abstract text available
    Text: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).


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    PDF KTA1266 -150mA. toKTC3198 -100uA cb-50V -150mA -100mA -10mA

    KTA1266

    Abstract: KTA1266 transistor KTA1266 GR KTC3198 KTA1266. transistor
    Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1266 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : hFE 2 =80(Typ.) at VCE=-6V, Ic=-150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.).


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    PDF KTA1266 -150mA KTC3198. KTA1266 KTA1266 transistor KTA1266 GR KTC3198 KTA1266. transistor

    KTA1266

    Abstract: KTA1266. transistor
    Text: M C C TO-92 P lastic-E n cap su late T ran sisto rs KTA1266 TRANSISTOR PNP FEATURES Pcm: 0.625W (Tam b=25‘C ) I cm ; -0 .15 A V(BR)CBO: -5 0 V i temperature range Tj,T.g: -55”C to + 1 50t: ELECTRICAL CHARACTERISTICS (Tamb=25°C u n l e s s o th e r w is e


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    PDF KTA1266 -100i» 30MHz KTA1266. transistor

    KTC3198

    Abstract: KTA1266
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I if e Linearity : hFE 2 =100(Typ.) a t V Ce =6V, Ic=150mA. • hFE(Ic-0.1mA)/liFE(Ic-2mA)=0.95(Typ.)


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    PDF KTC3198 150mA. KTA1266 270Hz KTC3198 KTA1266

    KTC3198

    Abstract: KTA1266 transistor KTC3198
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =100(Typ.) at VCE=6V, Ic=150mA. : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) • Low Noise : NF=ldB(Typ.) at f=lkHz.


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    PDF KTC3198 150mA. KTA1266 270Hz KTC3198 KTA1266 transistor KTC3198