Untitled
Abstract: No abstract text available
Text: Product specification KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1
|
Original
|
KTC4379
OT-89
500mW
KTA1666
500mA
|
PDF
|
KTA1666
Abstract: KTC4379 SOT89 UY marking UY
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4379 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-89
KTC4379
OT-89
KTA1666
500mA
KTA1666
KTC4379
SOT89 UY
marking UY
|
PDF
|
SMD transistor UY
Abstract: No abstract text available
Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4379 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 0.53±0.1 0.80±0.1
|
Original
|
KTC4379
OT-89
500mW
KTA1666
500mA
SMD transistor UY
|
PDF
|
KTC4379
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4379 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark U KTC4379 * Grade O O,Y Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
|
Original
|
KTC4379
OT-89
KTC4379
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR PNP 1. BASE FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application
|
Original
|
OT-89-3L
OT-89-3L
KTA1666
KTC4379
-500mA
-50mA
300mS,
|
PDF
|
KTC4379
Abstract: No abstract text available
Text: KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous
|
Original
|
KTC4379
OT-89
05-Feb-09
KTC4379
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4379 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-89-3L
KTC4379
OT-89-3L
KTA1666
500mA
|
PDF
|
KTC4379
Abstract: KTA1666 marking H
Text: SEMICONDUCTOR KTC4379 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A FEATURES C H Low Saturation Voltage G J B E : VCE sat =0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) PC=1 DIM
|
Original
|
KTC4379
KTA1666.
KTC4379
KTA1666
marking H
|
PDF
|
SOT89 UY
Abstract: MARKING UY marking 01, sot-89 1a SOT89
Text: KTC4379 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 4.6 4.4 1.8 1.4 1.6 1.4 3 B Features 2.6 4.25 2.4 3.75 Low saturation voltage High speed switching time Complementary to KTA1666 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
KTC4379
OT-89
OT-89
KTA1666
500mA
SOT89 UY
MARKING UY
marking 01, sot-89
1a SOT89
|
PDF
|
KTC4379
Abstract: KTA1666
Text: SEMICONDUCTOR KTC4379 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A FEATURES C H ᴌLow Saturation Voltage G J B E : VCE sat =0.5V(Max.) (IC=1A) ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.)
|
Original
|
KTC4379
KTA1666.
250mm
KTC4379
KTA1666
|
PDF
|
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
|
Original
|
Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
|
PDF
|
Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
|
Original
|
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
|
PDF
|
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
|
PDF
|
LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
|
Original
|
2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
|
PDF
|
|
|
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA1666 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A FEATURES C H ᴌLow Saturation Voltage G J B E : VCE sat =-0.5V(Max.) (IC=-1A) ᴌHigh Speed Switching Time : tstg=1.0Ọ S(Typ.)
|
Original
|
KTA1666
KTC4379.
250mm2
|
PDF
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
|
PDF
|
bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
|
Original
|
OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
|
PDF
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
PDF
|
S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
|
Original
|
SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
|
PDF
|
MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
|
Original
|
SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
|
PDF
|
KTA1666
Abstract: KTC4379 OB2 SOT-89
Text: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)
|
OCR Scan
|
KTC4379
KTA1666.
KTC4379
250mm
250mm2
KTA1666
OB2 SOT-89
|
PDF
|
KTA1666
Abstract: KTC4379 high speed amplfier
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V (Max.) (Ic=lA) • High Speed Switching Time: tstg=1.0//S(Typ.)
|
OCR Scan
|
KTC4379
KTA1666.
KTC4379
250mm2
KTA1666
high speed amplfier
|
PDF
|
marking Kf SOT-89
Abstract: c71d KTA1666 KTC4379
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VCE Sat =-0.5V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0^S(Typ.)
|
OCR Scan
|
KTA1666
KTC4379.
KTA1666
250mm2x
marking Kf SOT-89
c71d
KTC4379
|
PDF
|