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    KU 506 Search Results

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    KU 506 Price and Stock

    TE Connectivity KU-5065-2

    RELAY GEN PURP
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    DigiKey KU-5065-2 Bulk
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    Verical KU-5065-2 16 16
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    Master Electronics KU-5065-2 16
    • 1 $52.041
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    Sager KU-5065-2
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    Vishay Intertechnologies VS-VSKU105/06

    SCR Modules Input Modules - AAP DBC
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    Mouser Electronics VS-VSKU105/06
    • 1 $48.89
    • 10 $42.2
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    TE Connectivity KU500B1/8

    Knobs & Dials KNOB BLACK
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    Mouser Electronics KU500B1/8
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    TE Connectivity KU402B1/8

    Knobs & Dials KNOB BK W/DIAMOND
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    Mouser Electronics KU402B1/8
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    Shindengen Electronic Manufacturing Co Ltd KU10L08-5063

    Sidacs VDRM=63 ITSM=100
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    Mouser Electronics KU10L08-5063
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    Find more KU 506 price and stock on Findchips.com

    KU 506 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Industrial Automation Company Industrial Devices and Components Division H.Q. Measuring Components Department E5AR/ER Digital Controller DeviceNet Communications OMRON Corporation Shiokoji Horikawa, Shimogyo-ku, Kyoto, 600-8530 Japan Tel: 81 75-344-7080/Fax: (81)75-344-7189


    Original     		PDF 75-344-7080/Fax: NL-2132 2356-81-300/Fax: H124-E1-01 847-843-7900/Fax: Singapo85 omron247

    MH-34B4B

    Abstract: circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC
    Text: VHF/UHF ULTRA-COMPACT DUAL-BAND TRANSCEIVER WITH WIDE BAND COVERAGE OPERATING MANUAL VERTEX STANDARD CO., LTD. 4-8-8 Nakameguro, Meguro-Ku, Tokyo 153-8644, Japan VERTEX STANDARD US Headquarters 10900 Walker Street, Cypress, CA 90630, U.S.A. International Division


    Original     		PDF 0304G-0E MH-34B4B circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC

    FLM1414-12F

    Abstract: 3600mA
    Text: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		PDF FLM1414-12F FLM1414-12F D4888 3600mA

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: hadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed


    Original     		PDF FLM1414-12F FLM1414-12F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		PDF FLM1414-12F FLM1414-12F

    FLM1414-12F

    Abstract: No abstract text available
    Text: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed


    Original     		PDF FLM1414-12F FLM1414-12F FCSI0598M200

    NE42484C

    Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE42484C NE42484C NE42484C-SL 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    Untitled

    Abstract: No abstract text available
    Text: X5420MP X-Band Manpack Satellite Terminal Features •          Overview RF, Modem and Power Supply Modules are common to the complete Advantech Wireless ManPack line of terminals Supports X- WGS-certified , Ku-Band and KaBands (military and commercial)


    Original     		PDF X5420MP PB-X5420MP-13168

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1011-4F -46dBc FLM1011-4F FCSI0598M200

    FLM1011-4F

    Abstract: No abstract text available
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-4F -46dBc FLM1011-4F FCSI0598M200

    FLM8596-12F

    Abstract: No abstract text available
    Text: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM8596-12F -45dBc FLM8596-12F FCSI0101M200

    FLM8596-12F

    Abstract: No abstract text available
    Text: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM8596-12F -45dBc FLM8596-12F

    pt 11400

    Abstract: FLM1011-4F
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-4F -46dBc FLM1011-4F pt 11400

    TT2140

    Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
    Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage


    Original     		PDF EP106A O-220FI5H TT2140 transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140

    FLM8596-12F

    Abstract: X- Ku-band GaAs FETs
    Text: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM8596-12F -45dBc FLM8596-12F X- Ku-band GaAs FETs

    EMM5068

    Abstract: No abstract text available
    Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages


    Original     		PDF EMM5068VU 50ohm EMM5068VU EMM5068

    Thomson-CSF THYRISTOR tk 1204

    Abstract: TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601
    Text: three phase half-controlled metal stacks ponts triphasés mixtes métalliques Vr = Types VRRM m 80 A 400 600 1000 400 600 1000 / 400 600 1000 / / / RG 604 RG 606 RG 610 6xP80 6160 110 220 380 TK 1204 TK 1206 TK 1210 KU 1004 KU 1006 KU 1010 6xP80 6160 110 220


    OCR Scan     		PDF 6xP80 6xP150 Ta601 6xTNF150 6xP150 6xR150 Thomson-CSF THYRISTOR tk 1204 TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601

    0186A

    Abstract: BROWN BOVERI relay 80VER rxcla RK 418 001-DA relay 12v 200 ohm 40720 001Ka ASEA Brown 004-AA
    Text: ABB Relays r Copy to - Kopia till r Form title • Dokumentnamn r Ref MEMO To - Till RLY/F, P, U, Q, K, KA, KB, KU From - Fràn KU RLY/KÜ 521 1 Date - Datum Reg 900621 Dealt with by, telephone - Utfärdare, tfn-nr fC-H Einvall, j21441 Pag£ - Sidnr Cont - Forts


    OCR Scan     		PDF B03-2031 2M-36 2M-24 004-AA 004-BA 005-AA 005-AA 0186A BROWN BOVERI relay 80VER rxcla RK 418 001-DA relay 12v 200 ohm 40720 001Ka ASEA Brown 004-AA

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-12F - X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: = 5.0dB (Typ.) High PAE: riadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz


    OCR Scan     		PDF FLM1414-12F FLM1414-12F FCSI0598M200

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    NE42484A

    Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET

    Untitled

    Abstract: No abstract text available
    Text: 4855452 INTERNATIONAL RECTIFIER IQ R 73C Q7194 DJ T - o/ ~ 0 - 3 Data Sheet No. ku-2.142 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 73 D I 4fiSSMS2 D O D ? n 4 R30D & R30DR SERIES 1800 - 1200 VOLTS RANGE 415 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES


    OCR Scan     		PDF Q7194 R30DR R30DR16A. 07X98