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    KU BAND RF AMPLIFIERS Search Results

    KU BAND RF AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    UPC4570GR(20)-9LG-E1-A Renesas Electronics Corporation Ultra Low-Noise, High-speed, Wide Band, Dual Operational Amplifier Visit Renesas Electronics Corporation
    UPC844GR(20)-9LG-E1-A Renesas Electronics Corporation Single Power Supply, High-speed, Wide Band, Quad Operational Amplifier Visit Renesas Electronics Corporation

    KU BAND RF AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DBP-1617N530

    Abstract: No abstract text available
    Text: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Standard Communication Band Amplifiers Ku BAND, HIGH POWER LINEAR AMPLIFIERS SPECIFICATIONS MODEL NUMBER FREQUENCY


    Original     		DBP-1617N530 DBP-1819N530 DBP-1617N530 PDF

    RF remote control 10 MHz 17 Pin

    Abstract: RF power amplifier MHz
    Text: BLOCK UPCONVERTERS FOR INTEGRATION IN HIGH POWER AMPLIFIERS Ka-Band Model C-, X-, Ku- and DBS-Band Models FEATURES • 32 dB attenuation control • 10 MHz reference input on RF input or external reference input connector • Analog and RS485 remote control


    Original     		RS485 RS485. UPBA-13 UPBA-14 UPBA-17 UPBA-28 04G2/Hz D-301B RF remote control 10 MHz 17 Pin RF power amplifier MHz PDF

    SEMP 690

    Abstract: No abstract text available
    Text: SPG-14 SATCOM PRODUCT GUIDE CONTENTS Attenuators. 3 Amplifiers. 4-5


    Original     		SPG-14 SEMP 690 PDF

    KU band rf amplifiers

    Abstract: mgfk41a4045
    Text: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK41A4045 MGFK41A4045 41dBm KU band rf amplifiers PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK41A4045 MGFK41A4045 41dBm PDF

    ATF-35176

    Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
    Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK33V4045 MGFK33V4045 700mA PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK33V4045 MGFK33V4045 700mA PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK37V4045 MGFK37V4045 PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK35V4045 MGFK35V4045 PDF

    35W amplifiers

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK35V4045 MGFK35V4045 35W amplifiers PDF

    5.5w

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK37V4045 MGFK37V4045 5.5w PDF

    MGF2415

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2415A S to Ku BAND / 0.55W non - matched DESCRIPTION The MGF2415A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=27.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2415A MGF2415A, 150mA MGF2415 PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz


    Original     		MGF2445A MGF2445A, 12GHz 450mA PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=32.0dBm(TYP.) @f=12GHz


    Original     		MGF2445A MGF2445A, 12GHz 450mA PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2407A MGF2407A, PDF

    MGF2430A

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2430A MGF2430A, 300mA MGF2430A PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=30.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2430A MGF2430A, 300mA PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF2407A S to Ku BAND / 0.28W non - matched DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power Po=24.5dBm(TYP.) @f=14.5GHz


    Original     		MGF2407A MGF2407A, PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK38A3745 MGFK38A3745 50GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual Band X & Ku SSPA X 125W to 180W Ku 125W to 160W SSPA-XK Features •          Dual-band, linearity and efficiency High gain Microprocessor based monitor and control Monitoring of all key operating parameters Built-in forward and reflected power monitors


    Original     		RS232 RS422/485 PB-SSPA-XK-13150 PDF

    F1375

    Abstract: 9137 006 208 MGFK38A3745
    Text: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK38A3745 MGFK38A3745 50GHz 100ohm F1375 9137 006 208 PDF

    Untitled

    Abstract: No abstract text available
    Text: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK25V4045 MGFK25V4045 PDF

    SFD1001

    Abstract: wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001
    Text: PRODUCT SELECTION GUIDE: By Specifications RF Products: <2.5 GHz AMPLIFIERS Frequency Small Gain Noise Power Output Range Signal Gain Flatness Figure at 1 dB Compression Intercept VSW R MHz (dB) (±dB) (dB) (dBm) Point (dBm) (i/O) Volts mA Type AH1 450-3000


    OCR Scan     		A3010-1 SA1032 OT-89 J1-10 J1-13 J2-10 J2-13 J3-10 J3-13 E900-17 SFD1001 wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001 PDF