R04003C
Abstract: S2274
Text: SKYWORKS' D ATASH EET S K Y 12 2 0 7-3 0 6 LF: 0 .9 -4.0 GH z High Power Silicon PIN Diode SPOT Switch A p p lic a tio n s ANT • Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations • Transmit/receive switching in land mobile radios and military
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S2403
16-pin,
J-STD-020)
201517B
R04003C
S2274
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1N2054
Abstract: ir 70u KYW 30 40 diode
Text: Bulletin 12039 International [ïor 70/300U R s e rie s Rectifier STANDARD RECOVERY DIODES Stud Version 250A 300A Features • Alloy diode ■ P e a k reverse voltage up to 1000V ■ P op ular series for rough service ■ S tan dard J E D E C types ■ Stud cathode and stud anode version
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70/300U
1N2054
ir 70u
KYW 30 40 diode
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PDF
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BZX84
Abstract: BZX84-12 5.1 ZENER marking s350 S375 BZX84-C7VS
Text: BZX84 3+oj 0.4 Silicon P lanar Power Z ener Diodes The Zener voltages are graded according to the international E 24 standard. Add suffix “B” for ±2% toler-ance. M *r a0.95 0.951 - Top View t*- l&I Top View IS , 5 t , ii T <• i *•*+ '-r + 7.5 SOT-23 Plastic Package
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BZX84
OT-23
BZX84.
BZX84
BZX84-12
5.1 ZENER
marking s350
S375
BZX84-C7VS
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PDF
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IXYS IGBT
Abstract: igbt 600V 600A short circuit
Text: QIXYS VI0600-12S Advanced Technical Information VCE= 1200 V Hybrid IGBT Power Modules lc =60A COLLECTOR COLLECTOR KELVIN GATE Symbol Condition V cH S Ts = 25°C Max. Rating v GES >c >c I CM *F 'PM PC Ts = 25°C Ts = 80°C Ts = 25°C , 1ms V V 600 A A A 1200
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VI0600-12S
50/60HZ,
D-68619
Q-68619
IXYS IGBT
igbt 600V 600A short circuit
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PDF
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marking BSs mosfet
Abstract: Q62702-S631
Text: BSS119 SIPMOS N Channel MOSFET • SIPMOS - enhancement mode • Drain-source voltage Vfc» = 100V • Continuous drain current / D = 0.17A • Drain-source on-resistance • Total power dissipation /%>•<«> = 6.00 P0 = 0.36W Type Marking Ordering code for
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BSS119
Q62702-S631
marking BSs mosfet
Q62702-S631
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PDF
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buk443
Abstract: KYW 30 40 diode
Text: 5SE D N AMER P H I L IPS/DISCRETE m bbS3T31 0020345 2 PowerMOS transistor BUK443-50A BUK443-50B T - 3 ^ -0 7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
BUK443-50A
BUK443-50B
BUK443
T-39-09
buk443
KYW 30 40 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 T2 ï Ëf| ‘ìBHYTbB DGlDb3t. 1 92D UN I TRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.2 Ohm N-Channel 10636 D T 39-13 UFN240 UFN241 UFN242 UFN243 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN240
UFN241
UFN242
UFN243
UFN240
UFN241
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irf P-Channel MOSFET audio
Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
Text: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:
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SS452
T-39-19
IRFS620
IRFSG21
T0-220AB
IRF9620,
IRF9621,
IRF9622,
IRF9623
irf P-Channel MOSFET audio
IRF610 complementary
F9622
power MOSFET IRF610
IRF9621
rf9620
irf9622
k 3919
F9620
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PDF
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MOS 6509
Abstract: 400v 50A DIODE
Text: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.
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UFN342
UFN343
UFN341
UFN340
MOS 6509
400v 50A DIODE
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PDF
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diode zener 33c
Abstract: ZENER BUB
Text: b lE D • 17313L.S O O n W 3 0 e! I BUB T -S -i For Immediate Assistance, M a d Your Local BURR-BROüJN CORP BURR-BROW N ■b b PCM56P PCM56U I DESIGNED FOR AUDIO Serial Input 16-Bit Monolithic DIGITAL-TO-ANALOG CONVERTER FEATURES • SERIAL INPUT • •
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17313L
PCM56P
PCM56U
16-Bit
15-BIT
-20dB
diode zener 33c
ZENER BUB
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