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    L 200 REGULATOR Search Results

    L 200 REGULATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    L 200 REGULATOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    200cmax

    Abstract: No abstract text available
    Text: PD -95492 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits l l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101


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    IRF1704PbF O-220AB 200cmax PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -95492 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits l l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101


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    IRF1704PbF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V


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    93944D IRF7103Q EIA-481 EIA-541. PDF

    IRF1704

    Abstract: No abstract text available
    Text: PD -94012C IRF1704 AUTOMOTIVE MOSFET Benefits l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101 HEXFET Power MOSFET


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    -94012C IRF1704 O-220AB IRF1704 PDF

    94012b

    Abstract: IRF1704
    Text: PD -94012B IRF1704 AUTOMOTIVE MOSFET Benefits l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101 HEXFET Power MOSFET


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    -94012B IRF1704 O-220AB 94012b IRF1704 PDF

    355B

    Abstract: diode 368b 1SMC5348 1SMC5349 1SMC5350 1SMC5351 1SMC5352 1SMC5388
    Text: 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l l Glass passivated junction


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    1SMC5348 1SMC5388 DO-214AB DO-214AB MIL-STD-750, EIA-481) 355B diode 368b 1SMC5349 1SMC5350 1SMC5351 1SMC5352 1SMC5388 PDF

    IRF1704

    Abstract: planar transformer pcb
    Text: PD -94012C IRF1704 AUTOMOTIVE MOSFET Benefits l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101 HEXFET Power MOSFET


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    -94012C IRF1704 IRF1704 planar transformer pcb PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PD -94012 IRF1704 HEXFET Power MOSFET Benefits l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max D VDSS = 40V RDS on = 0.004Ω


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    IRF1704 PDF

    IRF1704

    Abstract: No abstract text available
    Text: PROVISIONAL PD -94012A IRF1704 HEXFET Power MOSFET Benefits l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max D VDSS = 40V RDS on = 0.004Ω


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    -94012A IRF1704 Rec52-7105 IRF1704 PDF

    1N5348B

    Abstract: 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5388B DO-201AE
    Text: 1N5348B THRU 1N5388B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l Low profile package l Built-in strain relief l l l Glass passivated junction Low inductance Typical ID less than 1 £gA above 13V l High temperature soldering :


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    1N5348B 1N5388B DO-201AE DO-201AE MIL-STD-750, 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5388B PDF

    1N5348B

    Abstract: 1N5388B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B DO-201AE
    Text: 1N5348B THRU 1N5388B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts DO-201AE FEATURES l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Typical ID less than 1 A above 13V


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    1N5348B 1N5388B DO-201AE DO-201AE MIL-STD-750, 1N5388B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96101B IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l


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    96101B IRF7103QPbF EIA-481 EIA-541. PDF

    diode 368b

    Abstract: 355B 368B diode 1SMC5388 ta 366b 1SMC5348 1SMC5349 1SMC5350 1SMC5351 1SMC5352
    Text: 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l For surface mounted applications in order to DO-214AB optimize board space l Low profile package l Built-in strain relief l Glass passivated junction


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    1SMC5348 1SMC5388 DO-214AB DO-214AB MIL-STD-750, EIA-481) diode 368b 355B 368B diode 1SMC5388 ta 366b 1SMC5349 1SMC5350 1SMC5351 1SMC5352 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l


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    6101A IRF7103QPbF EIA-481 EIA-541. PDF

    82C42

    Abstract: CAA19 cbd4 cba16 80c42 SC400 80C42 keyboard Am29F800T
    Text: Module Élan486VESA_0 Module Élan486-VESA FORTH-SYSTEME GmbH Postfach 11 03 l D-79200 Breisach a. Rhein Küferstr. 8 l D-79206 Breisach a. Rhein (07667 908-0 l Fax (07667) 908-200 l [email protected] Module Élan486VESA_0 (C) Copyright 1998: FS FORTH-SYSTEME GmbH


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    lan486VESA lan486-VESA D-79200 D-79206 lan486V lanSC400 82C42 CAA19 cbd4 cba16 80c42 SC400 80C42 keyboard Am29F800T PDF

    Equivalent IRF 44

    Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
    Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 Equivalent IRF 44 irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 PDF

    irf540 equivalent

    Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
    Text: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 irf540 equivalent IRF541 equivalent vn89af equivalent IRF540 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422 PDF

    VN0108N2

    Abstract: irf120 IRF232 IRF240 IRF422 IRF522 IRF540 IRF632 IRF640 IRF822
    Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jo p e ie s Device aaM O dSO W T0-220AB /o V T0-202AA C— lt~\1 II /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 VN0108N2 irf120 IRF232 IRF240 IRF422 IRF822 PDF

    creative sound blaster 5.1 circuit diagram

    Abstract: 24C02 w6 OPL2 RWA032
    Text: 41^ R o c k w e l l S em iconductor S ystem s WaveArtist 100, WaveArtist™ 200, and WaveArtist™ 300 Audio System Devices _ Introduction Features The Rockwell WaveArtist™ 100 RWA100 , WaveArtist™ 200 (RWA200) and WaveArtist™ 300 (RWA300) are


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    RWA100) RWA200) RWA300) 208/212-pin 16-bit MD151 7611Q73 creative sound blaster 5.1 circuit diagram 24C02 w6 OPL2 RWA032 PDF

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor LP2986 Micropower, 200 mA Ultra Low-Dropout Fixed or Adjustable Voltage Regulator General Description Features The LP2986 is a 200 m A precision LDO voltage regulator w hich offers th e d esigner a higher perform ance version of the industry standard L P 2951.


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    LP2986 PDF

    INS333-IN5388

    Abstract: IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B
    Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C


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    INS333-IN5388 1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1NS381B 1N5382B 1NS383B IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B PDF

    1M5378B

    Abstract: No abstract text available
    Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C


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    IN5333-IN5388 DO-35 DO-41 DO-15 DO-201AD 1M5378B PDF

    capacitor 102 35K

    Abstract: L51a TRANSISTOR S1d L44A LP2987 LP2988 M08A MUA08A l3005 105 35K 102
    Text: J anuary 1999 a t i o n a l S e m i c o n d u c t o r LP2987/LP2988 Micropower, 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available LP2988 General Description Features The LP2987/8 are fixed-output 200 mA precision LDO vo lt­


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    LP2987/LP2988 LP2988) LP2987/8 LP2988 capacitor 102 35K L51a TRANSISTOR S1d L44A LP2987 M08A MUA08A l3005 105 35K 102 PDF

    cirkitblock

    Abstract: cirkitblock powercube MIL-STD-704A 24ATDC41 20SP40-S1 switching preregulator
    Text: ATDC Series 200 Watt 30 AC-DC Converter Features: \ • 24, 28 or 36 VDC Output • 30, 400 Hz input • High power - 200 watt output • Accepts positive transients of Ml L-STD-704A/B. ATDC Series 200 Watt 30 AC-DC Converter The ATDC Series Cirkitblock modules are miniature ACDC converters that accept 3-phase 400 Hz input 115/220


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    L-STD-704A/B. 20SP40-S1, T34A373 cirkitblock cirkitblock powercube MIL-STD-704A 24ATDC41 20SP40-S1 switching preregulator PDF