200cmax
Abstract: No abstract text available
Text: PD -95492 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits l l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101
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IRF1704PbF
O-220AB
200cmax
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Untitled
Abstract: No abstract text available
Text: PD -95492 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits l l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101
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IRF1704PbF
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Untitled
Abstract: No abstract text available
Text: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V
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93944D
IRF7103Q
EIA-481
EIA-541.
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IRF1704
Abstract: No abstract text available
Text: PD -94012C IRF1704 AUTOMOTIVE MOSFET Benefits l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101 HEXFET Power MOSFET
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-94012C
IRF1704
O-220AB
IRF1704
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94012b
Abstract: IRF1704
Text: PD -94012B IRF1704 AUTOMOTIVE MOSFET Benefits l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101 HEXFET Power MOSFET
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-94012B
IRF1704
O-220AB
94012b
IRF1704
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355B
Abstract: diode 368b 1SMC5348 1SMC5349 1SMC5350 1SMC5351 1SMC5352 1SMC5388
Text: 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l l Glass passivated junction
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1SMC5348
1SMC5388
DO-214AB
DO-214AB
MIL-STD-750,
EIA-481)
355B
diode 368b
1SMC5349
1SMC5350
1SMC5351
1SMC5352
1SMC5388
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IRF1704
Abstract: planar transformer pcb
Text: PD -94012C IRF1704 AUTOMOTIVE MOSFET Benefits l l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified Q101 HEXFET Power MOSFET
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-94012C
IRF1704
IRF1704
planar transformer pcb
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PD -94012 IRF1704 HEXFET Power MOSFET Benefits l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max D VDSS = 40V RDS on = 0.004Ω
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IRF1704
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IRF1704
Abstract: No abstract text available
Text: PROVISIONAL PD -94012A IRF1704 HEXFET Power MOSFET Benefits l l l l l l 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max D VDSS = 40V RDS on = 0.004Ω
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-94012A
IRF1704
Rec52-7105
IRF1704
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1N5348B
Abstract: 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5388B DO-201AE
Text: 1N5348B THRU 1N5388B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l Low profile package l Built-in strain relief l l l Glass passivated junction Low inductance Typical ID less than 1 £gA above 13V l High temperature soldering :
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1N5348B
1N5388B
DO-201AE
DO-201AE
MIL-STD-750,
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5388B
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1N5348B
Abstract: 1N5388B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B DO-201AE
Text: 1N5348B THRU 1N5388B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts DO-201AE FEATURES l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Typical ID less than 1 A above 13V
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1N5348B
1N5388B
DO-201AE
DO-201AE
MIL-STD-750,
1N5388B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96101B IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l
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96101B
IRF7103QPbF
EIA-481
EIA-541.
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diode 368b
Abstract: 355B 368B diode 1SMC5388 ta 366b 1SMC5348 1SMC5349 1SMC5350 1SMC5351 1SMC5352
Text: 1SMC5348 THRU 1SMC5388 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts FEATURES l For surface mounted applications in order to DO-214AB optimize board space l Low profile package l Built-in strain relief l Glass passivated junction
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1SMC5348
1SMC5388
DO-214AB
DO-214AB
MIL-STD-750,
EIA-481)
diode 368b
355B
368B diode
1SMC5388
ta 366b
1SMC5349
1SMC5350
1SMC5351
1SMC5352
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l
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Original
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6101A
IRF7103QPbF
EIA-481
EIA-541.
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PDF
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82C42
Abstract: CAA19 cbd4 cba16 80c42 SC400 80C42 keyboard Am29F800T
Text: Module Élan486VESA_0 Module Élan486-VESA FORTH-SYSTEME GmbH Postfach 11 03 l D-79200 Breisach a. Rhein Küferstr. 8 l D-79206 Breisach a. Rhein (07667 908-0 l Fax (07667) 908-200 l [email protected] Module Élan486VESA_0 (C) Copyright 1998: FS FORTH-SYSTEME GmbH
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lan486VESA
lan486-VESA
D-79200
D-79206
lan486V
lanSC400
82C42
CAA19
cbd4
cba16
80c42
SC400
80C42 keyboard
Am29F800T
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PDF
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Equivalent IRF 44
Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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OCR Scan
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
Equivalent IRF 44
irf630
vn0106n5
VN46
VN0108N2
BUZ44
IRF232
IRF240
IRF422
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PDF
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irf540 equivalent
Abstract: IRF541 equivalent vn89af equivalent IRF540 irf640 vn0106n1 VN0109n5 IRFF121 IRF232 IRF422
Text: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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OCR Scan
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
irf540 equivalent
IRF541 equivalent
vn89af
equivalent IRF540
vn0106n1
VN0109n5
IRFF121
IRF232
IRF422
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PDF
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VN0108N2
Abstract: irf120 IRF232 IRF240 IRF422 IRF522 IRF540 IRF632 IRF640 IRF822
Text: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jo p e ie s Device aaM O dSO W T0-220AB /o V T0-202AA C— lt~\1 II /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200
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OCR Scan
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O-220
VN1000D
IRF522
VN1000A
IRF540
IRF632
IRF640
VN0108N2
irf120
IRF232
IRF240
IRF422
IRF822
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PDF
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creative sound blaster 5.1 circuit diagram
Abstract: 24C02 w6 OPL2 RWA032
Text: 41^ R o c k w e l l S em iconductor S ystem s WaveArtist 100, WaveArtist™ 200, and WaveArtist™ 300 Audio System Devices _ Introduction Features The Rockwell WaveArtist™ 100 RWA100 , WaveArtist™ 200 (RWA200) and WaveArtist™ 300 (RWA300) are
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OCR Scan
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RWA100)
RWA200)
RWA300)
208/212-pin
16-bit
MD151
7611Q73
creative sound blaster 5.1 circuit diagram
24C02 w6
OPL2
RWA032
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PDF
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Untitled
Abstract: No abstract text available
Text: Semiconductor LP2986 Micropower, 200 mA Ultra Low-Dropout Fixed or Adjustable Voltage Regulator General Description Features The LP2986 is a 200 m A precision LDO voltage regulator w hich offers th e d esigner a higher perform ance version of the industry standard L P 2951.
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OCR Scan
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LP2986
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PDF
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INS333-IN5388
Abstract: IN5333 Zener Diode colour diode lt 238 1N53588 1N53468 1N533 1N53518 1N53838 1N5333B
Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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OCR Scan
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INS333-IN5388
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1NS381B
1N5382B
1NS383B
IN5333
Zener Diode colour
diode lt 238
1N53588
1N53468
1N533
1N53518
1N53838
1N5333B
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PDF
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1M5378B
Abstract: No abstract text available
Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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OCR Scan
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IN5333-IN5388
DO-35
DO-41
DO-15
DO-201AD
1M5378B
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PDF
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capacitor 102 35K
Abstract: L51a TRANSISTOR S1d L44A LP2987 LP2988 M08A MUA08A l3005 105 35K 102
Text: J anuary 1999 a t i o n a l S e m i c o n d u c t o r LP2987/LP2988 Micropower, 200 mA Ultra Low-Dropout Voltage Regulator with Programmable Power-On Reset Delay; Low Noise Version Available LP2988 General Description Features The LP2987/8 are fixed-output 200 mA precision LDO vo lt
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OCR Scan
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LP2987/LP2988
LP2988)
LP2987/8
LP2988
capacitor 102 35K
L51a
TRANSISTOR S1d
L44A
LP2987
M08A
MUA08A
l3005
105 35K 102
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PDF
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cirkitblock
Abstract: cirkitblock powercube MIL-STD-704A 24ATDC41 20SP40-S1 switching preregulator
Text: ATDC Series 200 Watt 30 AC-DC Converter Features: \ • 24, 28 or 36 VDC Output • 30, 400 Hz input • High power - 200 watt output • Accepts positive transients of Ml L-STD-704A/B. ATDC Series 200 Watt 30 AC-DC Converter The ATDC Series Cirkitblock modules are miniature ACDC converters that accept 3-phase 400 Hz input 115/220
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OCR Scan
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L-STD-704A/B.
20SP40-S1,
T34A373
cirkitblock
cirkitblock powercube
MIL-STD-704A
24ATDC41
20SP40-S1
switching preregulator
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PDF
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