Untitled
Abstract: No abstract text available
Text: User’s M anual, V1.0, Mar. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
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Untitled
Abstract: No abstract text available
Text: User’s M anual, V1.1, Apr. 2002 TC11IB System Units 3 2 -B i t S i n g l e - C h i p M ic r o co n t ro l l e r M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2002-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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TC11IB
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smd diode marking LM
Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
Text: Pr el imi nar y Dat a Sh eet , DS1 , Ju ly 20 00 MuSLIC M u l t i c h a n n e l S u b s c r i b e r L in e Interface Concept PEB 3465 Version 1.2 PEB 31666/31664 Version 1.3 PEB 4166/4164 Version 2.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .
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D-81541
smd diode marking LM
4166 ic equivalent
PEB 4165 T
ntp 3000
HIGHWAY drv 801 ic
MVAM-1
PEB 4166 T
PEB31666
PEB3465
PEB4164
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100313PC
Abstract: 100313QC 100313QI 100313SC M24B MO-047 MS-013 N24E V28A
Text: Revised August 2000 100313 Low Power Quad Driver General Description Features The 100313 is a monolithic quad driver with two OR and two NOR outputs and common enable. The common input is buffered to minimize input loading. If the D inputs are not used the Enable can be used to drive sixteen 50Ω lines. All
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100313SC
24-Lead
100313PC
100313QC
100313QI
100313SC
M24B
MO-047
MS-013
N24E
V28A
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100313QC
Abstract: No abstract text available
Text: Revised November 1999 100313 Low Power Quad Driver General Description Features The 100313 is a monolithic quad driver with two OR and two NOR outputs and common enable. The common input is buffered to minimize input loading. If the D inputs are not used the Enable can be used to drive sixteen 50Ω lines. All
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100313SC
100313PC
100313QC
100313QI
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16-LINE TO 4-LINE PRIORITY ENCODERS
Abstract: t04 68 3 pin diode t04 68 3 pin transistor EB 36 3C GR "silicon on sapphire" 74 LS 04 Logic Gates cmos dual s-r latch MIL-STD-38510 multiplexers 74 LS 150 transistor T04
Text: 54HSC/T Series 54HSC/T Series Radiation Hard High Speed CMOS/SOS Logic Replaces May 1995 version, DS3594-3.3 The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high
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54HSC/T
DS3594-3
54/74LS,
DS3594-4
16-LINE TO 4-LINE PRIORITY ENCODERS
t04 68 3 pin diode
t04 68 3 pin transistor
EB 36 3C GR
"silicon on sapphire"
74 LS 04 Logic Gates
cmos dual s-r latch
MIL-STD-38510
multiplexers 74 LS 150
transistor T04
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74F539
Abstract: MC54 MC74FXXXDW
Text: MC54/74F539 DUAL 1-OF-4 DECODER WITH 3-STATE OUTPUTS The MC54 / 74F539 contains two independent decoders. Each accepts two Address A0 – A1 input signals and decodes them to select one of four mutually exclusive outputs. A polarity control input (P) determines whether the
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MC54/74F539
74F539
MC54
MC74FXXXDW
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HD74AC539
Abstract: Hitachi DSA00333
Text: HD74AC539 Dual 1-of-4 Decoder with 3-State Output Description The HD74AC539 contains two inpedendent decoders. Each accepts two Address A 0, A1 input signals and decodes them to select one of four mutually exclusive outputs. A polarity control input (P) determines
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HD74AC539
HD74AC539
Hitachi DSA00333
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SN74LS47N PIN DIAGRAM
Abstract: IC TTL 7400 diagram and truth table 74lsxxx data sheet 74 LS147 pin configuration layout INTERNAL STRUCTURE LS156 SN74LS47N pin configuration DL121 IC 7400 diagram and truth table philips semiconductor data handbook sn74ls47n counter
Text: DL121/D Rev. 6, Jan-2000 ON Semiconductor LS TTL Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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DL121/D
Jan-2000
r14525
DL121
SN74LS47N PIN DIAGRAM
IC TTL 7400 diagram and truth table
74lsxxx
data sheet 74 LS147 pin configuration layout
INTERNAL STRUCTURE LS156
SN74LS47N pin configuration
DL121
IC 7400 diagram and truth table
philips semiconductor data handbook
sn74ls47n counter
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HD74AC539
Abstract: Hitachi DSA00220
Text: HD74AC539 Dual 1-of-4 Decoder with 3-State Output ADE-205-398 Z 1st. Edition Sep. 2000 Description The HD74AC539 contains two inpedendent decoders. Each accepts two Address (A 0, A1) input signals and decodes them to select one of four mutually exclusive outputs. A polarity control input (P) determines
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HD74AC539
ADE-205-398
HD74AC539
Hitachi DSA00220
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Untitled
Abstract: No abstract text available
Text: fax id: 6147 U Itra371 28V UltraLogic 3.3V 128-Macrocell ISR™ CPLD • High speed Features — fM a x = 1 2 5 M H z 1 2 8 m a c r o c e l l s in e i g h t l o g i e b l o e k s — t PD = 1 0 n s 3.3V In-System R e p ro g ra m m a b le ISR™ — t s = 5. 5 n s
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Itra371
128-Macrocell
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Untitled
Abstract: No abstract text available
Text: TT WS128K32-XXX l/l/HITE /MICROELECTRONICS 128 Kx32 SRAM MODULE Organized as 128Kx32; User Configurable as 256Kx16 or FEATURES Commercial, Industrial and M ilitary Temperature Ranges • Access Times of 55 to 120nS 5 Volt Power Supply ■ MIL-STD-883 Compliant Devices Available
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WS128K32-XXX
128Kx32;
256Kx16
120nS
MIL-STD-883
512Kx8
66-pin,
WS128K32-XHX
WS128K32-XG4X
01HXX
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z845
Abstract: TD24 hm4 SMD
Text: 1. Mechanical Dimensions: 3. E l e c t r i c a l S p e c i f i c a t i o n s : 25°C £0.50 Max □ □ In s e rtio n □ R eturn □ Loss: 1 .OdB Max 1 - 1 0 0 M H z Loss: 18 d B Min, © 1 -3 0 M H Z — 18 d B Min, ®>40MHz — 1 6dB Min, ® 50M H z
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1-100MHz
1-30MHZ
40MHz
50MHz
80MHz
-43dB
30MHz
60MHz
100MHz
z845
TD24
hm4 SMD
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VEB mikroelektronik
Abstract: mikroelektronik DDR aktive elektronische bauelemente ddr TESLA Tesla katalog 74c915 V4093D 4502c mosfet 4040BC K561TM2
Text: DATEN DIGITALER INTEGRIERTER SCHALTKREISE AMATEUR BIBLIOTHEK Klaus K.Streng Streng, Klaus K.: Daten digitaler integrierter Schaltkreise CMOS-Schaltkreise . Berlin: Militirverlag der DDR. 1987. - 192 S.: 314 Bilder (Amateurbibliothek) ISBN 3-327-00360-2 l. Auflage, 1987
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HC4316
HC503
4351D/L
VEB mikroelektronik
mikroelektronik DDR
aktive elektronische bauelemente ddr
TESLA
Tesla katalog
74c915
V4093D
4502c mosfet
4040BC
K561TM2
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Untitled
Abstract: No abstract text available
Text: D RA W IN G M A D E IN A M E R IC A N PRO JECTIO N NUMBER C-1bb5Qi H USED ON B fl B I H - 'J - . S M i k 7I is : r ^ 7,5*4 i 5,95 \ s I 1 |L J I 1 7 _k u u □ _ D L 5EC TT D N B - R R - £.z4 Ararzs Z M r'n A 0 A/Af£ZK« £ MW /za M M M M ZOOS, M M f/2£ M S
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lbb50
1292-H
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information applikation
Abstract: DL193D information applikation mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 "Mikroelektronik" Heft mikroelektronik applikation VEB mikroelektronik applikation heft DL192D
Text: [ H n in k ^ t M E le l- c f a n a n il- c Information Applikatiùn Auf ein Wort: Werte Nutzer dieser Applikations-Hefte! Das Tempo der Entwicklung in der Mikroelektronik erfordert, ständig neue Informationen über Bauelemente und ihre mögliche Anwendung
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CCDs Charge Coupled Devices
Abstract: RD13B
Text: l:2[-’! 05^-16-92 OKI electronic components OPA256C-1_ Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, one-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices). By using a two-phase clock pulse, transfer pulse, and
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OPA256C-1
OPA256C-1
256-bit,
PA256C-1
RD13BL
tiPC159A
CCDs Charge Coupled Devices
RD13B
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256Kx8bit
Abstract: No abstract text available
Text: M4HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 A18C 1 • Read Access Times of 150, 200, 250, 300ns ■ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
300ns
MIL-STD-883
Re128Kx8
512Kx
256Kx8bit
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Untitled
Abstract: No abstract text available
Text: This is a partial data sheet. For complete data sheet, see Section 8, Modules. CYM1624 CYPRESS SEMICONDUCTOR 6 4 K x l 6 SRAM Module Features Functional Description • High-density X-megabit SRAM module T h e CY M 1624 is a very high perform ance 1-m egabit static R A M m odule organized
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CYM1624
i1611
CYM1622
i/o13
1624PV-25
1624PV-35
1624PV-4S
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Untitled
Abstract: No abstract text available
Text: N R S 2 3 2 C L I N E J U 6 4 1 B D R I V E R / R E C E I V E R GENERAL DESCRIPTION The NJU6401B is a RS232C line driver/receiver compos ed of 3 drivers and 5 receivers. The drivers convert the input of TTL level signals into RS232C level signals and limit the slew rate below
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NJU6401B
RS232C
RS-232C
NJU6401BD
NJU6401BM
NJU6401B
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Untitled
Abstract: No abstract text available
Text: t t W MS256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation
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MS256K16-XDLX
256Kx16
MIL-STD-883
256Kx16
256K16
01HXX'
03HXX'
256KX
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Untitled
Abstract: No abstract text available
Text: MITSUBISHICÍIICMPTR/MIPRC .-O LIE D • b24Tfl2ö Q G 1 7 h S 3 SSb « M i m V M ITSU BISH I L S u M33241GS CM OS D IR E C T M EM ORY A C C E S S CONTROLL.ER M 32/DM AC) DESCRIPTION M33241GS(M32/DMAC) It a hlgh-lunctlon, high-perform ance 32-blt direct memory a c c e u controller that accesses
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b24Tfl2Ã
M33241GS
32/DM
M33241GS
M32/DMAC)
32-blt
-L0436-A
KI-B103
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2N4116
Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)
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0-20A
0-100V
2N5006
2N5008
2N5288
2N5289
2N5284
2N5285
2N5346
2N5347
2N4116
2N5076
2N5006
2N5008
2N5288
2N5289
2N5317
2N5319
2N5731
2N5957
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M S M 5 6 V 1 6 4 0 0 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTIO N The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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152-Word
MSM56V16400
cycles/64
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