Thin-Film Technologies
Abstract: 0402 Thin Film Technologies TL MIM atceramics
Text: T L MIM TR AN S M I S S I ON L I NE M E TA L I NS U L ATO R -M E TA L CA PACITOR T L MIM TR AN S M I S S I ON L I NE M E TA L I NS U L ATE R -M E TA L CA PACITOR ATC // AVX TL MIM Transmission Line Metal-Insulator-Metal Capacitor ATC / /AVX Thin Film Technologies is pleased to introduce
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technical Information Proper ty Units Mechani cal Pr oper t i es Te n s i l e s t r e n g t h @ y i e l d Te n s i l e e l o n g a t i o n @ b r e a k Te n s i l e mo d u l u s F l ex u r a l m o d u l u s F l ex u r a l S t r e n g t h I zo n i mp a c t 1 / 8 " - n o t c h e d
|
Original
|
260rom
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D a t a S h e e t • Te r m i n a l Disconnect Terminals w i t h Te n s i o n C l a m p Technology ZTR NEW D i s c o n n e c t t e s t t e r m i n a l s a re s p e c i a l l y d e s i g n e d f o r t e s t a n d m e a s u re m e n t t a s k s . E l e c t r i c a l c i rc u i t s c a n b e s p e c i f i c a l l y d i s c o n n e c t e d f ro m t h e s u p p l y b y
|
Original
|
1N4007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D a t a S h e e t • Te r m i n a l Disconnect Terminals w i t h Te n s i o n C l a m p Technology ZTR NEW D i s c o n n e c t t e s t t e r m i n a l s a re s p e c i a l l y d e s i g n e d f o r t e s t a n d m e a s u re m e n t t a s k s . E l e c t r i c a l c i rc u i t s c a n b e s p e c i f i c a l l y d i s c o n n e c t e d f ro m t h e s u p p l y b y
|
Original
|
5X100
|
PDF
|
IRF P CHANNEL MOSFET
Abstract: No abstract text available
Text: PD - 96127 IRF7404QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free A D S 1 8 S 2 7 D S
|
Original
|
IRF7404QPbF
EIA-481
EIA-541.
IRF P CHANNEL MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95017B IRF7413PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D
|
Original
|
95017B
IRF7413PbF
EIA-481
EIA-541.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95017C IRF7413PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D
|
Original
|
95017C
IRF7413PbF
EIA-481
EIA-541.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD -96259 IRF7406GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free S S S G A D 1 8 2 7 D 3 6 D 4 5
|
Original
|
IRF7406GPbF
EIA-481
EIA-541.
|
PDF
|
EIA-541
Abstract: No abstract text available
Text: PD - 96081A IRF7413UPbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D
|
Original
|
6081A
IRF7413UPbF
EIA-481
EIA-541.
EIA-541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95017C IRF7413PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D
|
Original
|
95017C
IRF7413PbF
EIA-481
EIA-541.
|
PDF
|
IRF7416PBF
Abstract: 56a MARKING code IRF7101 F7101
Text: PD - 95137 IRF7416PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S S S G Description A D 1 8 2 7 D 3 6 D 4 5 D
|
Original
|
IRF7416PbF
EIA-481
EIA-541.
IRF7416PBF
56a MARKING code
IRF7101
F7101
|
PDF
|
IRF7101
Abstract: EIA-541 F7101
Text: PD - 95724 IRF7401PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET A A D 1 8 S 2 7 S 3 6 4 5 S G VDSS = 20V D D D
|
Original
|
IRF7401PbF
EIA-481
EIA-541.
IRF7101
EIA-541
F7101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95724 IRF7401PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET A A D 1 8 S 2 7 S 3 6 4 5 S G VDSS = 20V D D D
|
Original
|
IRF7401PbF
EIA-481
EIA-541.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95137A IRF7416PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -30V
|
Original
|
5137A
IRF7416PbF
EIA-481
EIA-541.
|
PDF
|
|
|
marking g20
Abstract: No abstract text available
Text: D a t a S h e e t • Te r m i n a l Disconnect Terminals with Screw Clamping Yoke Connection Technology WTR NEW D i s c o n n e c t t e s t t e r m i n a l s a re s p e c i a l l y d e s i g n e d f o r t e s t a n d m e a s u re m e n t t a s k s . E l e c t r i c a l c i rc u i t s c a n b e s p e c i f i c a l l y d i s c o n n e c t e d f ro m t h e s u p p l y b y
|
Original
|
5X100
WEW-35/2
5N/10
marking g20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V
|
Original
|
IRF7403PbF
EIA-481
EIA-541.
|
PDF
|
EIA-541
Abstract: IRF7101 MS-012AA
Text: PD- 95022 IRF7201PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Description HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D
|
Original
|
IRF7201PbF
EIA-481
EIA-541.
EIA-541
IRF7101
MS-012AA
|
PDF
|
EIA-541
Abstract: IRF7101
Text: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V
|
Original
|
IRF7403PbF
EIA-481
EIA-541.
EIA-541
IRF7101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APPROVER L L I-1 L I- 1 |— - i- r - I I-1 |— I "1 — I- 1= o -J* Technic a l Data: J Ma terial: • C o n t a c t l m e t a l housi ng : B r a s s • W ir e gu ard : S t a i n l e s s s t e e l • S u r f a c e o f s o l d e r tail: tin p late d
|
OCR Scan
|
XX1080
OSTHTXX1080
|
PDF
|
Untitled
Abstract: No abstract text available
Text: motorola SC -CDIODES/OPTOT 1SE D | L 3 L 7 2 S S o c ^ a S L . 7 | - - J - i h c 7 MOTOROLA 1N4099 thru 1N4135 1N4614 thru 1N4627 S E M IC O N D U C T O R TECHNICAL DATA SILICON ZENER DIODES L O W -L E V E L S IL IC O N P A S S IV A T E D Z E N E R D IO D E S
|
OCR Scan
|
1N4099
1N4135
1N4614
1N4627
L3b75SS
1N4135
|
PDF
|
C086
Abstract: f 0472 N-Channel MOSFET
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BSS123 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n l = 6 O H M S 100 V O L T S This TM O S FET is designed fo r h ig h -vo ltag e , h ig h
|
OCR Scan
|
BSS123
OT-23
O-236AA)
C0034
C086
f 0472 N-Channel MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ö -H co io co nnnnnnnnnnnnnnn_ S l § l s ) l § l s ) S l s ) S l s ) S ) l § l s ) l § l s ) ' REV ECN NO. A NEW DESIGN APP. DATE ro Ö -H O D D I Q I D I Q I Q I Q I Q I Q I D D I Q I D I Q I ' p o> SPECIFICATION ORDER INFORMATION * Current Rating:
|
OCR Scan
|
AC0023
B102A
|
PDF
|
bf170
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B F 170 Advance Inform ation S m all-S ig n al Field E ffe c t T ra n sis to r N -Channel Enhancem ent-M ode S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n = 5 O H M S 60 V O L T S
|
OCR Scan
|
-236A
bf170
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TECHN I CAL SHELL " D " : St ee I . f i n i s h : t i nned DATA SUBMINIATURE CONNECTORS BODY : G l a s s f i l l e d t h e r m o p l a s t i c . Fl ame r e t a r d a n t t o UL 94 V - 0 C o l o u r : b I ack . . CONTACTS : M a t e r i a l f o r s o c k e t s : b r a s s
|
OCR Scan
|
NOTICE-17D
|
PDF
|
