SML1001RBN
Abstract: No abstract text available
Text: SEMELAB PLC _ m bOE D m 0133107 GGDOSTb MflM H S U L B i _ MOS POWER 4 TO-24Zr SEME LAB SM L1001R BN SM L901R BN 1000V 900V 11.0A 1.00Í2 11.0A 1.0012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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O-24Zr
L1001R
L901R
SML901RBN
SML1001RBN
O-247AD
SML1001RBN
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L601R
Abstract: l8075 l1001 l6040
Text: IMI Sem elab Power M anagem ent Division 4 GENERATION POWER M OSFET DIE SEMELAB - 105 SEMELAB- 1 0 4 O • D ie S ize = 0 .2 9 0 ” x 0.2 5 0" P rim e T yp e s SM L1004 SM L802R 4 D ie S ize = 0 .1 9 9 ” x 0 .2 0 3 " S o u rc e P a d s = 0 .0 3 5 ” D ia.
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L1004
L802R
L601R
L1002R
L6060
L1001R
L8075
L6040
l1001
l6040
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sml20m40bfn
Abstract: L8030
Text: im i^i llll Sem elab Power M anagem ent Division 4 GENERATION HERMETIC POWER MOSFETS Package b v dss R d s ON PD W atts Q g(n C ) O hm s lD(Cont.) Am ps Ciss(pF) Volts (Typ) (Typ) 0.260 36.0 830 11560 454 SM L10026DFN 0.500 22.0 595 5560 227 SM L10050CFN
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L10026DFN
L10050CFN
SML1001R1AN
L1001R1HN
SML1001
L1002RAN
L1002RCN
L1002R4AN
L1002R4CN
sml20m40bfn
L8030
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01-3316
Abstract: No abstract text available
Text: SEMELAB PLC bOE T> m 013316? 000D73D 3S3 • S M L B INI _ i s MOS POWER = V r= IN I ä L1001R1AN 1000V 9.5A 1.1 Oft SML901R1AN 900V 9.5A 1.1 OQ L1001R3AN 1000V 8.5A 1.30Q SML901R3AN 900V 8.5A 1.3012 SEM E LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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000D73D
SML1001R1AN
SML901R1AN
SML1001R3AN
SML901R3AN
901R1AN
1001R1
901R3AN
1001R3
100mS
01-3316
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