BFG198
Abstract: microstripline
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
BFG198
microstripline
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r1601
Abstract: SOT223 MARKING L5 thn6601b
Text: Specification THN6601B NPN SiGe RF TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High gain bandwidth product 7.0 3.5 □ Features fT = 7 GHz - High power gain 1 |S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz
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THN6601B
OT223
r1601
SOT223 MARKING L5
thn6601b
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
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bfg97
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
bfg97
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BFG97
Abstract: BFG31 TRANSISTOR BFg97 sc7313
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
BFG97
BFG31
TRANSISTOR BFg97
sc7313
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bfg135 application note
Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
BFG135
MSB002
OT223.
R77/03/pp16
771-BFG135-T/R
bfg135 application note
bfg135sot223
BFG135 amplifier
TRANSISTOR GENERAL DIGITAL L6
BFG135,115
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BFG135 amplifier
Abstract: SC7313 BFG135 bfg135 application note MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
BFG135 amplifier
SC7313
BFG135
bfg135 application note
MBB298
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
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LM317 SOT223
Abstract: SIC350S BA92-03528A BA81 BA41-00416A BA41-004 49fl004 119MIL smd L272 BA920
Text: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P29G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List
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BA75-01617A
BA59-01328C
BA59-01328G
BA75-01616A
BA92-02757A
BA92-03528A
BA67-00277A
BA92-03125A
BA43-00134A
BA75-01635A
LM317 SOT223
SIC350S
BA81
BA41-00416A
BA41-004
49fl004
119MIL
smd L272
BA920
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LM317 SOT223
Abstract: w33 SMD sot 23 PC-GF10 49fl004 BA75-01620A SIC350S TM61PUH8G214 MP0402H BA59-01375A BA75-01732A
Text: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P27G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List
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NP-P27/F00/SER
BA75-01617A
BA59-01328C
BA59-01328G
BA75-01616A
BA92-02757A
BA92-03528C
BA67-00278A
BA43-00134A
LM317 SOT223
w33 SMD sot 23
PC-GF10
49fl004
BA75-01620A
SIC350S
TM61PUH8G214
MP0402H
BA59-01375A
BA75-01732A
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PowerMOS Transistors
Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
PowerMOS Transistors
075E05
MS-012AA
SO24
SSOP16
SSOP24
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bs33p
Abstract: BS50P
Text: AIC1117A 1A Low Dropout Positive Regulator FEATURES DESCRIPTION Dropout Voltage 1.3V at 1A Output Current. Fast Transient Response. The AIC1117A is a low dropout, three terminals Line Regulation, typical at 0.015%. to 1A. The device is available in an adjustable
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AIC1117A
AIC1117A
bs33p
BS50P
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Untitled
Abstract: No abstract text available
Text: AIC1086 1.5A Low Dropout Positive Regulator FEATURES DESCRIPTION Dropout Voltage 1.3V at 1.5A Output Current. Fast Transient Response. Line Regulation, typical at 0.015%. Load Regulation, typical at 0.1%. Current Limiting and Thermal Protection. Adjustable Output Voltage or Fixed at 1.8V, 2.5V,
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AIC1086
AIC1086
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ak33p
Abstract: AK17P AK25P
Text: AIC1117 800mA Low Dropout Positive Regulator FEATURES DESCRIPTION Dropout Voltage 1.2V at 800mA Output Current. The AIC1117 is a low dropout, three terminals Fast Transient Response. regulator designed to provide output current Line Regulation, typical at 0.015%.
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AIC1117
800mA
AIC1117
800mA.
ak33p
AK17P
AK25P
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ZLDO1117
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZLDO1117 1A LOW DROPOUT POSITIVE REGULATOR 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5.0V AND ADJUSTABLE OUTPUTS Description Pin Assignments ZLDO1117 is a low dropout positive adjustable or fixed-mode SOT223 regulator with 1A output current capability.
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ZLDO1117
ZLDO1117
OT22s,
DS32018
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npn 2222 transistor
Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.
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BFG198
OT223
7110fl2b
MSA035
OT223.
npn 2222 transistor
BFG198
MS80
din 45325
2222 TRANSISTOR NPN
Philips 2222 114 capacitor
2222 851
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NT 407 F TRANSISTOR
Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.
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BFG198
OT223
MS8002
OT223.
NT 407 F TRANSISTOR
Philips CD 303
2222 595
npn 2222 transistor
BFG198
MS8002
0450 7N
2222 443
TRANSISTOR D 471
MRA transistor
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MB87S
Abstract: No abstract text available
Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.
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bbS3R31
BFG198
OT223
MB87S
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D 823 transistor
Abstract: transistor PH ON 823 m
Text: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage
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OT223
BFG31.
BFG97
D 823 transistor
transistor PH ON 823 m
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npn smd 2a
Abstract: smd 27E S0T223 T79 SMD BDS949 BDS951 BDS953 BDS955 IEC134 S0T-223
Text: BDS949/951/953/9S5 Datasheet statu* Product specification date of issue April 1991 NPN silicon epitaxial base power transistors PINNING-SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope
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BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
PINNING-SOT223
BDS949
BDS951
BDS953
BDS955
npn smd 2a
smd 27E
S0T223
T79 SMD
IEC134
S0T-223
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philips resistor 2322 763
Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage
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BFG97
OT223
BFG31.
OT223
philips resistor 2322 763
bfg97 scattering
BFG97
D 1413 transistor
BFG31
UBB774
PH ON 823
TRANSISTOR BFg97
24C1S
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BFG35
Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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BFG35
OT223
OT223.
MSA035
TRANSISTOR FQ
BFG35 amplifier
BHS111
npn 2222 transistor
TRANSISTOR NPN c4 nf
C2570
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BFG35 amplifier
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.
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OT223
I3FG55.
BFG35
OT223.
MBB364
BFG35 amplifier
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transistor smd 12p
Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
Text: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band
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711002b
BLT81
OT223
MSC092
MRCQ89
transistor smd 12p
transistor 12p smd
smd transistor at t21
transistor smd t21
smd transistor 12p
smd transistor 2x5
B7 smd transistor
transistor ft 960
smd 12p
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