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    4-221

    Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
    Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET PDF

    m 861

    Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
    Text: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		May1996 NDP6051/NDB6051 m 861 NDB6051 NDP6051 GCMOz 225si T-50113 PDF

    2N5088 national

    Abstract: 2N5088 2N5210 2N5210 national
    Text: 2N5210 D iscrete P O W E R & S ig n a l Technologies National Semiconductor 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		2N5210 2N5088 L5Q1130 2N5088 national 2N5210 2N5210 national PDF