L7C187PC20
Abstract: CY7C187 IDT7187 L7C187CC15 L7C187CC20 L7C187PC12 L7C187PC15 L7C187 64k x 1 static ram
Text: L7C187 L7C187 DEVICES INCORPORATED 64K x 1 Static RAM 64K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 64K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum
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L7C187
MIL-STD-883,
IDT7187,
CY7C187
22-pin
24-pin
L7C187
L7C187PC20
CY7C187
IDT7187
L7C187CC15
L7C187CC20
L7C187PC12
L7C187PC15
64k x 1 static ram
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Untitled
Abstract: No abstract text available
Text: L7C187 L7C187 DEVICES INCORPORATED 64K x 1 Static RAM 64K x 1 Static RAM DEVICES INCORPORATED DESCRIPTION L7C187 BLOCK DIAGRAM O ROW SELECT 8 as 2 V. The L7C187 consumes only 30 µW typical at 3 V, allowing effective battery backup operation. The L7C187 provides asynchronous
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L7C187
L7C187
187-G
22-pin
L7C187KC20
L7C187KC15
L7C187KC12
L7C187KM25
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Untitled
Abstract: No abstract text available
Text: L7C187 64K x 1 Static RAM DEVICES INCORPORATED I FEATURES DESCRIPTION □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 225 mW typical at 25 ns
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OCR Scan
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PDF
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L7C187
MIL-STD-883,
IDT7187,
CY7C187
22-pin
24-pin
L7C187
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S187B
Abstract: No abstract text available
Text: L7C187 64K x 1 Static RAM FEATURES □ 64K x 1 Static RAM w ith Separate I /O , C hip Select Pow erdow n □ A uto-Pow erdow n D esign □ A dvanced C M O S Technology □ High Speed — to 8 ns m axim um □ Low Pow er O peration A ctive: 135 m W typical at 35 ns
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OCR Scan
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PDF
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22-pin
24-pin
L7C187
seven12
L7C187UC35
L7C187W
L7C187DM35
S187B
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Untitled
Abstract: No abstract text available
Text: L7C187 J r. V i ; E K 6 4 K x 1 S t a t ic R A M r . C O H - ’C M A T F DESCRIPTION FEATURES □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation
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OCR Scan
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PDF
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L7C187
L7C187
addition187CM15
MIL-STD-883
L7C187CMB25
L7C187CMB20
L7C187CMB15
22-pin
L7C187KC20
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Untitled
Abstract: No abstract text available
Text: L7C187 64K x 1 Stal : RAM DEVICES INCORPORATED FEATURES □ 64K x 1 Static RAM with Separate 1 /O, Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ H igh Speed — to 8 n s maximum □ Low Power Operation Active: 135 mW typical at 35 ns
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OCR Scan
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PDF
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L7C187
L7C187
L7C187PC35
L7C187CC35
L7C187WC35
L7C187KC35
L7C187KM35
L7C187CM35
MIL-STD-883
L7C187CMB35
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L7C187PC25
Abstract: No abstract text available
Text: LOGIC DEVICES XINC SSbSÌQS OQOOSMb 3 IbE D L7C187 64K x 1 Static RAM -H é-ZZ-oS Features Description □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry
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OCR Scan
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PDF
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L7C187
L7C187
CY7C187
interfa10
L7C187PC25
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L7C187PC25
Abstract: L7C187PC20 CON12 CY7C187 L7C187PC15 L7C187PC35 L7C187PC45 L7C187PC85 L7C187UC85
Text: L7C187 64K x 1 Static RAM Features Description □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit per word. Parts are available in six
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OCR Scan
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PDF
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L7C187
CY7C187
22-pin
24-pin
L7C187is
L7C187PC25
L7C187PC20
CON12
CY7C187
L7C187PC15
L7C187PC35
L7C187PC45
L7C187PC85
L7C187UC85
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Untitled
Abstract: No abstract text available
Text: L7C187 64K x 1 Static RAM FEATURES Q 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown Q Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 135 mW typical at 35 ns Standby: 500 jiW typical
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OCR Scan
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PDF
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L7C187
L7C187
CY7C187
L7C187CM35
L7C187KM35
L7C187CME35
L7C187KME35
L7C187DME35
MIL-STD-883
L7C187DMB35
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Untitled
Abstract: No abstract text available
Text: L7C187 64K x 1 Static RAM Features_ Description_ □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit
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OCR Scan
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PDF
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L7C187
L7C187
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Untitled
Abstract: No abstract text available
Text: L7C187 6 4 K x 1 S t a t ic R A M DESCRIPTION FEATURES □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 225 mW typical at 25 ns
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OCR Scan
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PDF
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L7C187
MIL-STD-883,
IDT7187,
CY7C187
22-pin
24-pin
L7C187KC20
L7C187KC15
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TTL 22pin
Abstract: 8AE20
Text: LOG IC D E V I C E S INC IbE D SSbSTDS OOQOSMb 3 L7C187 64K x 1 Static RAM T -W -Zl-oS Features Description □ 64K by 1 Static RAM with separate I/O, Chip Select power down □ Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 15 ns worst-case
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000054b
L7C187
CY7C187
22-pin
24-pin
L7C187
TTL 22pin
8AE20
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