relais bv 20.1
Abstract: detecteur infrarouge Honeywell 38240 meylan Honeywell 38240 infrarouge FF-SDER11B2 detecteur de mouvement interrupteur commutateur DETECTEUR regulateur 2502
Text: Bordures de sécurité Inspirées de la technologie optoélectronique APPLICATIONS TYPIQUES • Portes industrielles portes en sections, portes coulissantes, etc • Dispositifs de sécurité et portes de machine • Véhicule auto-contrôlé • Ponts de levage et plates-formes
|
Original
|
PDF
|
107096-12-FR
relais bv 20.1
detecteur infrarouge
Honeywell 38240 meylan
Honeywell 38240
infrarouge
FF-SDER11B2
detecteur de mouvement
interrupteur commutateur
DETECTEUR
regulateur 2502
|
Ultrasonic Distance sensor
Abstract: 943-F4Y-2D-1D0-300E Honeywell 943 943-F4Y-2D-002-180E "Ultrasonic Distance" Sensor 943-F4Y-2D-1C0-180E 943-F4Y-2D-001-300E la 4325 943-F4V-2D-001-180E 943-T4Y-2D-1D0-130E
Text: 943 Series Ultrasonic Distance Sensors The new 943 series industrial sensors are the latest addition to our product range. They have improved scanning ranges, remote teach in of the switching or analog outputs, as well as new advanced features, such as window
|
Original
|
PDF
|
|
Ultrasonic Distance Sensor
Abstract: "Ultrasonic Distance" Sensor HONEYWELL KGZ-10 943-T4V-2D-1D0-130E honeywell ultrasonic 943-F4V-2D-1C0-180E 943-F4Y-2D-1D0-300E Commonwealth Accessories 943-T4V-2D-001-130E 943-T4V-2D-002-130E
Text: 943 Series Ultrasonic Distance Sensors The new 943 series industrial sensors are the latest addition to our product range. They have improved scanning ranges, remote teach in of the switching or analog outputs, as well as new advanced features, such as window
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT IDT7130SA/LA IDT7140SA/LA Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 2 5 /3 5 /5 5 /1 00ns (max.) — Commercial: 2 5 /3 5 /5 5 /1 00ns (m ax.) — Commercial: 20ns in P LC C only for 7130
|
OCR Scan
|
PDF
|
IDT7130SA/LA
IDT7140SA/LA
16-or-m
T7140
T7130;
48-pin
52-pin
|
Untitled
Abstract: No abstract text available
Text: HIGH DENSITY PLUS Modular Daughterboard-to-Backplane INTERCONNECTION SYSTEM FEATURES A N D BENEFITS • M o d u la r c o n n e c to rs — s ig n a l, p o w e r , p o la r iz in g a n d g u id a n c e ■ ■ U p t o six ro w s o f c o n ta c ts o n 0 .1 0 0 " g rid
|
OCR Scan
|
PDF
|
QQN-280,
E-0593
KW-93-2009
|
Untitled
Abstract: No abstract text available
Text: M RAD I ALL 18 GHz OPTIONS INDICATOR TECHNICAL DATA SHEET SMA LA TC H I N G R573 432530 S.P.5T. Page SWITCH 112 /SUPP.DIODES to right the NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 5 0 - 1 8 GHz 50 Ohms FREQUENCY GHz V.S.W.R <=| 0 - 3 ] 00 1 8 -12.4 12.4- 18
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: M RAD I ALL 18 GHz OPTIONS INDICATOR T EC H N IC A L DATA S H EET SMA LA TC H I N G / TTL DRIVE R573 432520 S.P.5T. Page SWITCH 112 /SUPP.DIODES to right 5 0 - 1 8 GHz 50 Ohms FREQUENCY GHz V.S.W.R <=| 0 - 3 ] 1 the NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE
|
OCR Scan
|
PDF
|
|
converter ic tl494C
Abstract: IC TL495 TL495 TL494C pin diagram TL495IN tl494 TP32A TL495IJ TL495C TL494M
Text: TL494 TL495 @ M O TO R O LA Specifications and Applications Information SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUITS SWITCHMODE PULSE WIDTH MODULATION CONTROL CIRCUITS SILICON MONOLITHIC INTEGRATED CIRCUITS The TL494 and TL495 are fixe d freq u en cy, p ulse w id th m o d u
|
OCR Scan
|
PDF
|
TL494
TL495
TL495
TL494,
converter ic tl494C
IC TL495
TL494C pin diagram
TL495IN
TP32A
TL495IJ
TL495C
TL494M
|
M8952
Abstract: D4321 AGE SCR scr 209 ED43 powerex ED43 ED432021 SCR S N 104
Text: t i r m w w m m w m m m E D 4 3 _ t owerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 _21 _ D u a l S C R IS O la t& d P O W -R -B L O K M o d u le
|
OCR Scan
|
PDF
|
Amperes/600-2000
peres/600-2000
M8952
D4321
AGE SCR
scr 209
ED43
powerex ED43
ED432021
SCR S N 104
|
Untitled
Abstract: No abstract text available
Text: ThomasëBetts Two-Piece Connectors Heavy Duty Power DIN TYPE F PRESS-FIT FEMALE CONNECTOR SERIES 38 T O LR92964 E60960 P hysica l P ro perties In s u la tio n M a te r ia l: Glass filled thermoplastic rated UL 94V-0 C o lo r : Gray C o n ta c ts : Copper alloy, nickel plate overall,
|
OCR Scan
|
PDF
|
LR92964
E60960
382-43250-845X
382-43240-845X
382-44830-845X
-4325C-945X
|
4305H
Abstract: No abstract text available
Text: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 •Fax: 201-489-6911 ¡ • CI WHERE hicago M iniature La m i?I nc. INNOVATION COMES TO LIGHT r I O N A N D B A I L t R B S SERIES 4331,4332,4333,4335,4336,4337 SERIES 4351 thru 4357 • This is a smaller version of the 4311 series lenses and
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM67C618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The M C M 67 C 61 8 A is a 1.179,648 bit synchronous static random access m e m ory desig n ed to p rovide a burstable, h ig h -p erform a n ce, secondary cache
|
OCR Scan
|
PDF
|
MCM67C618A
i486TM
CM67C618A
MCM67C618AFN5
MCM67C618AZP5
MCM67C618AFN7
MCM67C618AZP7
MCM67C618A
|
Piezo sounder
Abstract: burglar alarm system diagram anti theft alarm Siren Sound Generator circuit diagram
Text: AUTOMOTIVE AND HOUSEHOLD SECURITY SIREN DRIVER ISSU E 6 - JA N U A RY 1998 INTRODUCTION FEATURES The ZSD 100 is a frequency swept alarm signal generator designed specifically for s ta tic a nd a u to m o tiv e s e c u r it y a la rm s y s t e m s . O n e Z S D 1 0 0 , tw o t im in g
|
OCR Scan
|
PDF
|
ZSD100
ZSD100
Piezo sounder
burglar alarm system diagram
anti theft alarm
Siren Sound Generator circuit diagram
|
EM84
Abstract: EM-84 Radiotechnique 120 la 4325
Text: IN D IC A TE U R D’ACCORD ET CONTROLEUR DE M O D U LA TIO N CARACTÉRISTIQUES C h a u ffa g e V f = 6,3 V If = 210 m A j In d ire c t (cathode isolée du fila m e n t A lim e n ta tio n en parallèle C O N D IT IO N S NOMINALES D ’EMPLOI (D reliée à l'a node)
|
OCR Scan
|
PDF
|
|
|
|
dual high side MOSFET driver with charge pump
Abstract: MAX620 MAX620CWN MAX620EPN MAX620EWN MAX621 MAX621CPN MAX621EPN P1000J ANDVT
Text: 19-4325; Rev 2; 10/94 Q uad, H ig h -S id e M O S F E T D riv e rs The M AX620/M AX621 are m ic ro p ro c e s s o r c o m p a tib le and fe a tu re u n d e rv o lta g e lo c k o u t c a p a b ility . This lo cko u t fe a tu re in h ib its th e FET d riv e r o u tp u ts until th e h ig h -s id e
|
OCR Scan
|
PDF
|
MAX620/MAX621
39i-1595)
dual high side MOSFET driver with charge pump
MAX620
MAX620CWN
MAX620EPN
MAX620EWN
MAX621
MAX621CPN
MAX621EPN
P1000J
ANDVT
|
Untitled
Abstract: No abstract text available
Text: 19-4325; Rev 2; 10/94 Q uad, H ig h -S id e M O S F E T D riv e rs The M AX620/M AX621 are m ic ro p ro c e s s o r c o m p a tib le and fe a tu re u n d e rv o lta g e lo c k o u t c a p a b ility . This lo cko u t fe a tu re in h ib its th e FET d riv e r o u tp u ts until th e h ig h -s id e
|
OCR Scan
|
PDF
|
|
ration ppt
Abstract: 621 cp ure 14 25 AXG21 X6201 gpf CAPACITOR IRFZ40N
Text: 19-4325. Rev 2: 10/94 Q uad, H ig h ’S id e M O S F E T D riv ers G e n e ra l D e scrip tio n The M AX620/M AX621 are m ic ro p ro c e s s o r c o m p a tib le a n d fe a tu re u n d e rv o lta g e lo c k o u t c a o a b 'lity . This lo cko u t fe a tu re in h ib its th e FET d riv e r o u tp u ts u n til the h ig h -s id e
|
OCR Scan
|
PDF
|
MAX620/MAX621
ration ppt
621 cp ure 14 25
AXG21
X6201
gpf CAPACITOR
IRFZ40N
|
Untitled
Abstract: No abstract text available
Text: 19-4325; Rev 2; 10/94 Q uad, H ig h -S id e M O S F E T D riv e rs _ F e a tu re s ♦ Wide Operating Voltage Range Vcc The M AX620/M AX621 are m ic ro p ro c e s s o r c o m p a tib le and fe a tu re u n d e rv o lta g e lo c k o u t c a p a b ility . This lo cko u t
|
OCR Scan
|
PDF
|
AX620/M
AX621
|
MM256
Abstract: No abstract text available
Text: Low Power SRAM Selection Guide IV2> A c c e s s tim e Capacity Organization Version Part num ber 128 K x 8 V P0431000A 70. 85. 10Q with CE1, CE2, OE 256 K 32 K X 8 ft P D 43256B M axim u m supply current O perating Standby (mA| <M) O a ta ^ retention I* A)
|
OCR Scan
|
PDF
|
P0431000A
32-pin
600mi0.
525mi!
600mil)
43256B
MM256
|
MAX621
Abstract: QUA0 MAX620cpn
Text: 19-4325; R ev 0; 7/91 / M / J X I / M Quad, H igh-Side M O SFET D rivers The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability. This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a
|
OCR Scan
|
PDF
|
MAX620/MAX621
MAX620
MAX621
QUA0
MAX620cpn
|
SO20-1
Abstract: No abstract text available
Text: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16Kx 1-BIT Integrated D evice T ech n o logy, Inc. Access tim es as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby
|
OCR Scan
|
PDF
|
IDT6167SA
IDT6167LA
15/20/25/35/45/55/70/85/100ns
15/20/25/35ns
IDT6167LA
20-pin
MIL-STD-883,
SO20-1
|
Coaxial RG
Abstract: 6825R
Text: CABLE ASSEM BLIES MINI.ALLIGATOR CLIPS TO BNC MALE MINI-CLIPS/BNC MALE 1st E N D — 2 plated m in ia tu re steel a llig a to r clips w ith v in y l bo ots. One red and one bla ck. 1st E N D — (2) Plated steel allig a to r clips w ith v in y l in
|
OCR Scan
|
PDF
|
|
PD43256A
Abstract: D43256AG 43256ac D43256A C-15LL D43256 upd43256a
Text: NEC ffPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The #iPD43256A is a 32,768-word by 6 -bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make
|
OCR Scan
|
PDF
|
uPD43256A
83IH-6258A
iPD43256A
768-word
pPD43256A
JJPD43256A
83IH-6438B
ffPD43256A
JIPD43256A
PD43256A
D43256AG
43256ac
D43256A
C-15LL
D43256
|
uPD43254
Abstract: No abstract text available
Text: f jP D 4 3 2 5 4 F I ÆJJ W NEC Electronics Inc. 65,536 X 4-Bit Static CMOS RAM Description Pin Configurations T h e /JP D 43254 is a 6 5 ,536 -w o rd by 4-b it s ta tic RAM fa b ric a te d w ith a d v a n c e d silico n -g a te technology. C M O S p e rip h e ra l circu its a n d N -ch an n el m e m o ry cells
|
OCR Scan
|
PDF
|
uPD43254
536-word
/JPD43254
/PD43254
24-Pin
ffPD43254
83IH-6774B
|
