vishay so-8 pin dimensions
Abstract: PowerPAK SO-8 vishay power pak SO-8 package dimension so-8 vishay weight an821 Application Note SO8 Exposed PowerPAK 1212-8 Si4874DY Si7446DP
Text: AN821 Vishay Siliconix PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available
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AN821
28-Feb-06
vishay so-8 pin dimensions
PowerPAK SO-8
vishay power pak SO-8 package dimension
so-8 vishay weight
an821
Application Note SO8 Exposed
PowerPAK 1212-8
Si4874DY
Si7446DP
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Application Note AN821
Abstract: 71622
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to
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AN821
16-Mai-13
Application Note AN821
71622
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so-8 vishay weight
Abstract: land pattern for ppak
Text: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET
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Si7386DP
Si7386DP-T1-E3
Si7386DP-T1-GE3
28-Feb-06
so-8 vishay weight
land pattern for ppak
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land pattern for TSSOP-8
Abstract: PowerPAK 1212-8 tssop8 thermal performance land pattern for TSSOP land pattern for ppak land pattern for TSOP TSSOP-8 footprint TSOP 48 thermal resistance so-8 vishay weight PowerPAK SO-8
Text: AN822 Vishay Siliconix PowerPAK 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available
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AN822
i212-8
03-Mar-06
land pattern for TSSOP-8
PowerPAK 1212-8
tssop8 thermal performance
land pattern for TSSOP
land pattern for ppak
land pattern for TSOP
TSSOP-8 footprint
TSOP 48 thermal resistance
so-8 vishay weight
PowerPAK SO-8
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Untitled
Abstract: No abstract text available
Text: Si7370DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 15.8 0.013 at VGS = 6 V 14.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7370DP
Si7370DP-T1-E3
Si7370DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®
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Si7454DP
Si7454DP-T1-E3
Si7454DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • High-Side DC/DC Conversion
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Si7392DP
Si7392DP-T1
Si7392DP-T1-E3
Si7392DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7940DP Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 APPLICATIONS PowerPAK SO-8 S1 6.15 mm • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down
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Si7940DP
Si7940DP-T1-E3
Si7940DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7956DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 4.1 0.115 at VGS = 6 V 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low On-Resistance in New Low Thermal
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Si7956DP
Si7956DP-T1-E3
Si7956DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7461DP Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.0145 at VGS = - 10 V - 14.4 0.019 at VGS = - 4.5 V - 12.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si7461DP
2002/95/EC
Si7461DP-T1-E3
Si7461DP-T1-GE3
15hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7382DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0047 at VGS = 10 V 24 0.0062 at VGS = 4.5 V 21 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Low-Side DC/DC Conversion
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Si7382DP
Si7382DP-T1-E3
Si7382DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7434DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) ID (A) 0.155 at VGS = 10 V 3.8 0.162 at VGS = 6 V 3.7 • Halogen-free According to IEC 61249-2-21 Available • PWM-OptimizedTrenchFET Power MOSFET
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Si7434DP
Si7434DP-T1-E3
Si7434DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7942DP Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.049 at VGS = 10 V 5.9 0.060 at VGS = 6 V 5.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance
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Si7942DP
Si7942DP-T1-E3
Si7942DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 19 0.0095 at VGS = 4.5 V 17 Qg (Typ.) 11.5 • • • • Halogen-free available TrenchFET Gen II Power MOSFET
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Si7386DP
Si7386DP-T1-E3
Si7386DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7856ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0037 at VGS = 10 V 25 0.0048 at VGS = 4.5 V 23 Qg (Typ.) 39 PowerPAK SO-8 • Halogen-free available Available • TrenchFET Power MOSFET RoHS*
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Si7856ADP
Si7856ADP-T1
Si7856ADP-T1-E3
Si7856ADP-T1-GE3
11-Mar-11
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Si7445DP-T1-E3
Abstract: No abstract text available
Text: Si7445DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0077 at VGS = - 4.5 V - 19 0.0094 at VGS = - 2.5 V - 17 0.0125 at VGS = - 1.8 V - 15 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7445DP
Si7445DP-T1-E3
Si7445DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7983DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 12 0.020 at VGS = - 2.5 V - 11 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available
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Si7983DP
Si7983DP-T1-E3
Si7983DP-T1-GE3
11-Mar-11
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PowerPAK
Abstract: No abstract text available
Text: Si7459DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) - 30 0.0068 at VGS = - 10 V - 22 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®
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Si7459DP
Si7459DP-T1-E3
Si7459DP-T1-GE3
11-Mar-11
PowerPAK
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Untitled
Abstract: No abstract text available
Text: Si7448DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0065 at VGS = 4.5 V 22 0.009 at VGS = 2.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7448DP
Si7448DP-T1-E3
Si7448DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7478DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 20 0.0088 at VGS = 4.5 V 18.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®
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Si7478DP
Si7478DP-T1-E3
Si7478DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7949DP Vishay Siliconix Dual P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7949DP
Si7949DP-T1-E3
Si7949DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server
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Si7336ADP
Si7336ADP-T1-E3
Si7336ADP-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7465DP Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7465DP
Si7465DP-T1-E3
Si7465DP-T1-GE3
11-Mar-11
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PDF
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vishay so-8
Abstract: No abstract text available
Text: Si7450DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 5.3 0.090 at VGS = 6 V 5.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®
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Si7450DP
Si7450DP-T1-E3
Si7450DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vishay so-8
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