Bt 2313
Abstract: AU 6256 bt 1488 22202 capacitor 344 21225 3429 vectron Lowpass Filter 3 GHz 10393 making 7136 1004 BT 816 transistor
Text: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of
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Untitled
Abstract: No abstract text available
Text: IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C FAST CMOS 1-OF-8 DECODER WITH ENABLE Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • • • • The IDT54/74FCT138/A/C are 1-of-8 decoders built using an advanced dual metal CMOS technology. The IDT54/
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IDT54/74FCT138
IDT54/74FCT138A
IDT54/74FCT138C
IDT54/74FCT138/A/C
IDT54/
74FCT138/A/C
IDT54/74FCT138/A/C
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drw03
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ES771
Abstract: No abstract text available
Text: I N T E G R A T E D DEVI CE SflE D Integrated Device Technology, Inc. • 40 2 5 7 7 1 DO l O b M l FAST CMOS 1-OF-8 DECODER WITH ENABLE ifib ■ IDT IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C FEATURES: DESCRIPTION: • IDT54/74FCT138 equivalent to FAST speed
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IDT54/74FCT138
IDT54/74FCT138A
IDT54/74FCT138C
IDT54/74FCT138C
ES771
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 1-0F-8 DECODER WITH ENABLE Integrated Device Technology, Inc, DESCRIPTION: FEATURES: The IDT54/74FCT138/A/C are 1-of-8 decoders built using advanced CEMOS , a dual metal CMOS technology. The IDT54/74FCT138/A/C accept three binary weighted inputs
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IDT54/74FCT138/A/C
IDT54/74FCT138/
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IDT54/74FCT138
IDT54/74FCT138A
IDT54/74FCT138C
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5A/ESD 138C
Abstract: No abstract text available
Text: FAST CMOS 1-OF-8 DECODER IDT54/74FCT138 IDT54/74FCT138A IDT54/74FCT138C In tegrated D evice T ec h n o lo g y, Inc. FEATURES: DESCRIPTION: • IDT54/74FCT138 equivalent to FAST speed The IDT54/74FCT138/A',C are 1-of-8 decoders built using advanced CEMOS™ , a dual metal CM OS technology. The
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IDT54/74FCT138
IDT54/74FCT138A
IDT54/74FCT138C
IDT54/74FCT138/A'
IDT54/74FCT138/A/C
IDT54/74FCT138/
MIL-STD-883,
5A/ESD 138C
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em itter Voltage C ollector-Base Voltage Em itter-Base Voltage Symbol Value Unit v CEO 50 Vdc VCBO 60 Vdc v EBO 6.0 Vdc Collector Current — Continuous
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MPS6428
b3b75SS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 1 EMITTER M AXIM UM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO 50 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage v EBO 6.0 Vdc
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MPS6428
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D45VH7
Abstract: D45VH D45VH1 D45VH4 D44VH D45VH10
Text: Power Transistore F ile N u m b e r 15.24 D45VH Series Silicon P-N-P Transistors Complementary to the D44VH Serles Features: • Fast S w itching ts < 500 ns resistive t f < 100 ns • Low V 'c p jjg f < 1.0V @ IC = 8A TERMINAL DESIGNATIONS The D45VH-series of s ilicon p-n-p pow er transistors are
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D45VH
D44VH
D45VH-series
D45VH7
D45VH1
D45VH4
D45VH10
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c 2579 power transistor
Abstract: hf power transistor NPN c 2579 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 8 0 0 -9 6 0 MHz.
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MRF899
c 2579 power transistor
hf power transistor NPN
c 2579 transistor
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Untitled
Abstract: No abstract text available
Text: February 1988 MM54HCT00/MM74HCT00 Quad 2 Input NAND Gate General Description The MM54HCT00/MM74HCT00 are NAND gates fabricated using advanced silicon-gate CMOS technology which pro vides the inherent benefits of CMOS— low quiescent power and wide power supply range. These devices are input and
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MM54HCT00/MM74HCT00
MM54HCT00/MM74HCT00
DM54LS/74LS
MM54HCT/MM74HCT
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transistor D 2581
Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics
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MRF658
transistor D 2581
ERIE CAPACITORS TYPE K
ERIE CAPACITORS
N5060
erie .33 400
Erie TRIMMER CAPACITOR
CAPACITOR MURATA
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lucas 953048
Abstract: d0352 MARKING 2581 ups 2581 v DD3520 DD3520A DD3573 DD3573A BSAU151
Text: LUCAS STABILITY ELEK LTD öl D • SbG7013 8 lc , .°_0 0 . l 7 _ _ . p _ S IL IC O N D IF F U S E D J U N C T IO N IN - L IN E R E C T IF IE R 50 - 5 0 0 V T R A N S IE N T R E V E R S E V O L T A G E ÜGD0Ü37 r b «LUCB DD3520 DD3520A DD3573 DD3S73A y The rectifiers are silicon diffused junction, am bient rated devices w ith a solid rectan
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5bQ7013
GG00037
DD3520
DD3520A
DD3573
DD3573A
6-35mm)
M/678/BC
lucas 953048
d0352
MARKING 2581
ups 2581 v
DD3573A
BSAU151
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k1507
Abstract: K1663 K1507 MOSFET 90t03p 25k956 2SK956 2SK1661 2SK1507 2SK1388 1n05
Text: FUJI G l T L t lC s ï r i jg û E C O L LH ER SEMICONDUCTOR INC MAE D • 5 5 3 6 7 ^ 5 0 Q 0 1 Ô 0 2 DbM « C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn
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T0220F15
K1663
k1507
K1663
K1507 MOSFET
90t03p
25k956
2SK956
2SK1661
2SK1507
2SK1388
1n05
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MRF342
Abstract: transistor D 2581 RF340
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and
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MRF342
RF340
RF344
MRF342
transistor D 2581
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HARRIS 5195
Abstract: ha5195-5 HA2-5190-2 HA1-5195-5 HA5190 5195-5 2268B harris ha-5195 X1320
Text: HARRIS SEMICON] SECTOR blE » • 4302271 004L.743 10b « H A S HA-5190, HA-5195 33 Wideband, Fast Settling Operational Amplifiers March1993 Features • Description Fast Settling Tim * 0.1% ).70ns • Very High Slaw R a ta .200V/ns
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HA-5190,
HA-5195
00V/na
150MHz
HA-5190/5195
HGURE14.
50ns/Div.
M3QSE71
HARRIS 5195
ha5195-5
HA2-5190-2
HA1-5195-5
HA5190
5195-5
2268B
harris ha-5195
X1320
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Untitled
Abstract: No abstract text available
Text: January 1988 MM54HC125/MM74HC125 MM54HC126/MM74HC126 TRI-STATE Quad Buffers General Description Features These are general purpose TRI-STATE high speed non-inverting buffers utilizing advanced silicon-gate CMOS tech nology. They have high drive current outputs which enable
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MM54HC125/MM74HC125
MM54HC126/MM74HC126
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TLC2721
Abstract: 272AI 272BC TLC2721D 272C DIP D3138 277 op LC277 272CP tlc27
Text: TLC272, TLC272A, TLC272B, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS D3138, O CTO BER 1 9 8 7 - R E V IS E D O CTO BER 1990 • • • • Trimmed Offset Voltage: TLC277 . . . 500 /*V Max at 25 °C, Vqd - 5 V J G , OR P P A C K A G E TO P V IEW ]
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TLC272,
TLC272A,
TLC272B,
TLC277
D3138,
TLC277
TLC2721
272AI
272BC
TLC2721D
272C DIP
D3138
277 op
LC277
272CP
tlc27
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thm 6043
Abstract: ull 2803
Text: I C S R 13 MIL-C-39003/01 M allorY Solid Tantalum Capacitors Hermetically Sealed GENERAL SPECIFICATIONS Graded Failure Rates Operating Temperature: -55 'C to +125 C (With proper derating) Voltage Range: 6 to 100 WVDC @ 85°C Reverse Voltage (non-continuous):
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MIL-C-39003/01
CSR13J565K*
CSR13J685K*
M39003/01
CSR13B565KM
1284/lndianapolis
46206-1284/Phone:
273-0090/Fax:
thm 6043
ull 2803
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idt39c10
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. 12-BIT CMOS MICROPROGRAM SEQUENCER FEATURES: • microprogram sequencers are intended for use in controlling th e se q u e n ce of m ic ro in s tru c tio n s e xe cu te d in the microprogram memory. The IDT39C10s provide several
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12-BIT
IDT39C10s
33-deep
IDT39C1
idt39c10
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IDT39C10
Abstract: pc 2581 v micro pc 2581 IDT39C10B lifo stack S1QB
Text: INTEGRATE] DEVICE SflE D 12-BIT CMOS MICROPROGRAM SEQUENCER • 4BES771 DDlOflBZ 735 ■ IDT IDT39C10B IDT39C10C ■ 4 ct - l 7 - S \ microprogram sequencers are intended for use in controlling the sequence of m icroinstructions executed in the microprogram memory. The IDT39C10s provide several
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12-BIT
4BES771
IDT39C10B
IDT39C10C
IDT39C10C
33-Deep
40-pin
IDT39C10
pc 2581 v
micro pc 2581
lifo stack
S1QB
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Untitled
Abstract: No abstract text available
Text: TLC274, TLC274A, TLC274B, TLC274Y, TLC279 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOSD92B - SEPTEMBER 1987 - REVISED AUGUST 1994 • ■ • Trimmed Offset Voltage: TLC279. . . 900 mV Max at 25°C, VDD = 5 V I I • Input Offset Voltage D rift. . . Typically
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TLC274,
TLC274A,
TLC274B,
TLC274Y,
TLC279
SLOSD92B
TLC279.
flRbl724
0DR32TD
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TRANSISTOR BH 4216
Abstract: SCROLLING LED DISPLAY CIRCUIT diagram 8x 8 led dot matrix annunciator hl 4020 LR 1737 R HCD66727A03 HCD66727A03BP HCD66727A04 HCD66727A04BP
Text: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function HITACHI A D E -2 0 7 -3 1 1 (Z ) '9 9 .9 R e v . 0 .0 Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan
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HD66727
ADE-207-311
HD66727,
HD66727
12-character
HD66727_
TRANSISTOR BH 4216
SCROLLING LED DISPLAY CIRCUIT diagram
8x 8 led dot matrix
annunciator
hl 4020
LR 1737 R
HCD66727A03
HCD66727A03BP
HCD66727A04
HCD66727A04BP
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A31-1
Abstract: No abstract text available
Text: TEXAS INSTR ASIC/MEMORY 77C D • 0^1725 G0M0Ö41 =1 TM4256FL8, TM4256GU8, TM4257FL8, TM4257GU8 262,144 BY 8 BIT DYNAMIC RAM MODULES ADVANCE INFORMATION ISEO NOVEMBER 1985 OCTOBER 1985 - REVISEI T M 4 2 5 .F L 8 . . . L SINGLE-IN-LINE PACKAGE 2 6 2 ,1 4 4 X 8 Organization
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TM4256FL8,
TM4256GU8,
TM4257FL8,
TM4257GU8
30-Pin
fl1bl725
A31-1
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Untitled
Abstract: No abstract text available
Text: SED1220 LCD Controller Driver Technical Manual S-MOS Systems, Inc. August, 1996 Version 1.0 S-MOS Systems, Inc. »2460 North First Street • San Jose, CA 95131 »Tel: 408 922-0200 • Fax: (408) 922-0238 7 cJ3eclOti Q003EÛ2 141 THIS PAGE INTENTIONALLY BLANK
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SED1220
Q003E
CA95131
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