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    LEM HA 2000 Search Results

    LEM HA 2000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-059BNCX200-000.6 Amphenol Cables on Demand Amphenol CO-059BNCX200-000.6 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 0.5ft Datasheet
    CO-059BNCX200-015 Amphenol Cables on Demand Amphenol CO-059BNCX200-015 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 15ft Datasheet

    LEM HA 2000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100AH

    Abstract: No abstract text available
    Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES 豊富なラインアップ形状と標準低Rdc、大電流シリーズでお客様の広範囲


    Original     		PDF K25VJ105C YLB3218fg3225 YLBMF1608fg YLB3218 YLBMF1608 100AH

    100-NP

    Abstract: lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components
    Text: Current Transducer LAX SERIES Ref LAX 100-NP IPN = 50-100 A Provisional Datasheet Electrical Data Specifications Symbol 50 At Unit Min Typ 100 At Max Min Conditions Typ Max 1 IPN At Primary current, measuring range IP At -150 +150 -160 Measuring resistance


    Original     		PDF 100-NP 100-NP lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components

    LEM 3225

    Abstract: LEM Taiyo Yuden JISC0051
    Text: 信号系巻線チップインダクタ WOUND CHIP INDUCTORS FOR SIGNAL LINE LB SERIES M TYPE OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES YLBM2016（新製品） 下面電極構造を採用により高Q化および狭公差化を実現しました。信号


    Original     		PDF K25VJ105C YLBM2016 LEM 3225 LEM Taiyo Yuden JISC0051

    lc 2518

    Abstract: ah 90 c251 A/lc 2518
    Text: 巻線チップインダクタ WOUND CHIP INDUCTORS LB SERIES OPERATING TEMP. K25VJ85C 特長 FEATURES YSmall size wound chip inductor with low DC resistance. YDemension without directional influence on mounterbility and characteristics. Y超小型低直流抵抗の巻線チップインダクタ


    Original     		PDF K25VJ85C lc 2518 ah 90 c251 A/lc 2518

    lem lt 100 p

    Abstract: N24-N2 Lem LT 80 p lem current lt 100 LG jtag
    Text: P R E L IM IN A R Y D A T A S H E E T M it s u b is h i < d ig it a l a s s p > M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NO TE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which


    OCR Scan     		PDF M66244FP M66244FP 72MHz. 45MHz 72MHz lem lt 100 p N24-N2 Lem LT 80 p lem current lt 100 LG jtag

    Untitled

    Abstract: No abstract text available
    Text: * TRIPLE 4-INPUT MULTIPLEXER WITH ENABLE SYNERGY SY100S371 SEMICONDUCTOR FEATURES • ■ Max. propagation delay of 1000ps ■ Ie e DESCRIPTION The SY100S371 is an ultra-fast triple 4-input multiplexer with true and complementary outputs designed for use in


    OCR Scan     		PDF SY100S371 1000ps SY100S371 000225b D24-1 371FC F24-1 371JC J28-1

    Untitled

    Abstract: No abstract text available
    Text: 3N163. 3N164. LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 3N163. 3N164. 3N163 3N164 375mW 300ms.

    2SB113

    Abstract: 2SD1665
    Text: 2SD1665M/2SD1857 Is ~7 > V 7s £ /Transistors x 2 S D 1 6 6 2 S D 1 8 5 5 M e ^ # ' > 7 ^ 7 V - ^ N P N '> • ; = ] > h Epitaxal Planar N PN Silicon Transistors /Medium Power Amp. 7 • • JF^Tj-;i[2|/Dimensions Unit : mm 1) raifi/3: X ' $> -5 o B V c e o = 120V


    OCR Scan     		PDF 2SD1665M/2SD1857 2SB113 2SB1236 2SD1665

    CY54FCT399CTLMB

    Abstract: CY74FCT399ATPC CY74FCT399ATQC CY74FCT399CTPC CY74FCT399CTSOC
    Text: CY54/74FCT399T CYPRESS Features Q uad 2-Input R egister • Function, pinout and drive compatible with FCT and F logic • FCT-C speed at 6.1 ns mux. Com'] FCT-A speed at 7.0 ns max. (Com’l) • Reduced Voh (typically = 3.3V) • ESD > 2000V • Fully compatible with TTL input and


    OCR Scan     		PDF CY54/74FCT399T FCT399T 4FCT399CTSOC 16-Lead 300-Mil) CY54FCT399CTLMB 20-Pin CY74FCT399ATPC CY74FCT399ATQC CY74FCT399CTPC CY74FCT399CTSOC

    Untitled

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BSH107 N-channel enhancement mode MOS transistor Objective specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13b Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS Philips S e m ico n d u cto rs


    OCR Scan     		PDF BSH107 SC13b 135108/00/02/pp8

    Untitled

    Abstract: No abstract text available
    Text: Tem ic MOD500B/500C Siliconix Four N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 500 0.43 13 Leadform O ptions MOD500B . MQD500C . •uf Bent Down Bent Up Ô s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF MOD500B/500C MOD500B MQD500C P-36734--Rev. MOD500B/S00C

    a10hc

    Abstract: No abstract text available
    Text: HN27C512 Series Maintenance Only 512K 64K x 8-bit UV EPROM • DESCRIPTION The Hitachi HN27C512 is a 512-Kilobit Ultraviolet Erasable and Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27C512 features fast address access times and low


    OCR Scan     		PDF HN27C512 512-Kilobit 28-pin ns/200 a10hc

    SMD diode b24

    Abstract: marking LZ smd diode PLVA2659A t33 smd lz smd marking PLVA2600A PLVA2650A PLVA2653A PLVA2656A SMD MARKING CODE b24
    Text: N AMER PHILIPS/DISCRETE b 'ìE D P ro d u c t sp e c ific a tio n P hilip s S em ico n d u cto rs D o u b le lo w -vo ltag e avalanche re g u la to r d io d es PLVA2600A series Q U IC K R E F E R E N C E DATA FE A TU R E S • V e ry low d ynam ic im pedance at


    OCR Scan     		PDF PLVA2600A SMD diode b24 marking LZ smd diode PLVA2659A t33 smd lz smd marking PLVA2650A PLVA2653A PLVA2656A SMD MARKING CODE b24

    Untitled

    Abstract: No abstract text available
    Text: jnn^ 53030 SPST SOLID-STATE RELAY M ILITA RY, DC SO LID STA TE RELAY W ITH SH O RT C IR C U IT PRO TEC TIO N FEATURES • • • • • • • IAW DESC Drawing 87042 SPST, Normally Open Up to 1200 V RMS Isolation CMOS or TTL Compatible Input Power FET Output for Low On-state Resistance


    OCR Scan     		PDF MIL-R-28750

    lem la 50p

    Abstract: WS59510 59510-40
    Text: WS59510 CMOS 16 x 16 MULTIPLIER ACCUMULATOR K EY F E A TU R E S 16 x 16 Bit Parallel Multiplication with Accumulation to 35-Bit Result • Two’s Complement or Unsigned Magnitude Operation Fast • Immune to Latch-Up — Over 200 mA — 30 ns Multiply Accumulate Time


    OCR Scan     		PDF WS59510 35-Bit Am29510 TDC1010 16-bit WS59510-30J WS59510-40J WS59510-40P WS59510-50J lem la 50p 59510-40

    ECL IC NAND

    Abstract: No abstract text available
    Text: 7 « 19 DATA SHEET FX Family High Performance Gate Arrays SEMICONDUCTOR CORPORATION Features • 5 A rra y s fro m 2 0 K to 3 5 0 K G a te s • C lo c k D is trib u tio n S c h e m e fo r • S u p e rio r P e rfo rm a n c e : H igh S p e e d an d L o w P o w e r D is s ip a tio n


    OCR Scan     		PDF

    ADSP-1016JD

    Abstract: MPY16HJ d64a f64a trw 1016 ADSP-1016JX mpy-16hj1 ADSP-1016SD trw mpy 16 MPY-16HJ
    Text: ANALOG DEVICES □ FEATURES 16 x 16 Parallel Array M u ltip lier 150m W m ax P ow er Dissipation w ith CMOS Technology 145ns M u ltip ly Tim e Im proved M PY-16HJ Second Source T w o's C om plem ent, Unsigned M a gnitud e or M ixed M o d e M ultiplication


    OCR Scan     		PDF 16x16-Bit ADSP-1016 150mW 145ns MPY-16HJ 64-Pin 68-Pin 68-Terminal ADSP-1016 ADSP-1016JD MPY16HJ d64a f64a trw 1016 ADSP-1016JX mpy-16hj1 ADSP-1016SD trw mpy 16

    lem module ha

    Abstract: TT 80 SCR MODULE
    Text: POWEREX INC 1SE D • 75T4L21 G0G343? 1 ■ W IMEREX CM420455 CM420855 925-7272 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 Powere» Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 SCR/Diode POW-R-BLOICMModules


    OCR Scan     		PDF 75T4L21 G0G343? 1S697 BP107 CM420455 CM420855 peres/400-800 CM420455, CM420855 Amperes/400-800 lem module ha TT 80 SCR MODULE

    BAI 59 DIODE

    Abstract: diode a57 smd
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET PDZ-B series Voltage regulator diodes 1998 Apr 23 Product specification Supersedes data of 1998 Jan 09 File under Discrete Semiconductors, SC01 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan     		PDF OD323 115104/00/03/pp8 BAI 59 DIODE diode a57 smd

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200HB-50H H° 'S p a'# # c so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.


    OCR Scan     		PDF CM1200HB-50H

    t7351

    Abstract: DD231 T7352 T7351B-FC
    Text: Data Sheet January 1994 microelectronics group Lucent Technologies Bell Labs innovations T7351B/T7352 FDDI/TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement


    OCR Scan     		PDF T7351B/T7352 T7352 0D50D2b DG23112 t7351 DD231 T7351B-FC

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES F«l»SpssSSt"“*' CM800HB-66H n °mePa,a<,'eWC so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.


    OCR Scan     		PDF CM800HB-66H

    Untitled

    Abstract: No abstract text available
    Text: <o> ai 1m CmC i m w lC m m m •v i 00 S 304 “-.j U I N î AimD' N A N D i j A î E ^JSS W S E M /C O N D U C T O P m ssM FEA TU R E S The SY100S304 is an ultra-fast quint AND/NAND gate designed for use in high-performance ECL systems. This device also features a Function F output which is the wireNOR of the AND gate outputs. The inputs on the device


    OCR Scan     		PDF 1050ps SY100S304 75Ki2 F10QK 304FC SY100S 304JC D24-1 F24-1

    Untitled

    Abstract: No abstract text available
    Text: ADE-207-052 HA13150 21 W x 4-Channel BTL Power IC HITACHI Preliminary SepRî99? Description Features H A 13150 is a four-channel BTL amplifier IC designed for car audio, featuring high output and low distortion, and applicable to digital audio equipment. It provides 21 W output per channel,


    OCR Scan     		PDF ADE-207-052 HA13150