LEM HA 25-NP
Abstract: 25-NP lem HA lem HA 25 NP
Text: Stromwandler HA 10 to 25-NP IPN = 5 . 25 A Für die elektronische Strommessung : DC, AC, Impuls., mit galvanischer Trennung zwischen dem Primärkreis Starkstromkreis und dem Sekundärkreis (elektronischer Kreis). Elektrische Daten Primärnennstrom DC oder effektiv IPN (A)
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25-NP
10-NP
LEM HA 25-NP
25-NP
lem HA
lem HA 25 NP
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LEM HA 25-NP
Abstract: lem HA 25-NP lem HA 15 10-NP lem HA 25 NP electronic series and parallel circuits flowing LEM Components
Text: Current Transducer HA 10 to 25-NP IPN = 5 . 25 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Primary Nominal Rms current IPN (A)
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25-NP
10-NP
LEM HA 25-NP
lem HA
25-NP
lem HA 15
10-NP
lem HA 25 NP
electronic series and parallel circuits flowing
LEM Components
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LEM HA 25-NP
Abstract: lem HA 25 NP 25-NP lem HA
Text: Current Transducer HA 10 to 25-NP/SP2 IPN = 5 . 25 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Primary Nominal Rms current IPN (A)
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25-NP/SP2
10-NP/SP2
LEM HA 25-NP
lem HA 25 NP
25-NP
lem HA
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lem HA
Abstract: LEM HA 25-NP lem HA 25 NP/SP1 25-NP LEM components lem HA 25 NP electronic series and parallel circuits flowing
Text: Current Transducer HA 10 to 25-NP/SP1 IPN = 5 . 25 A For the electronic measurement of DC, AC and pulsed currents, with a galvanic isolation between the primary high power circuit and the secondary (electronic) circuit. Electrical data Primary Nominal Rms current IPN (A)
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25-NP/SP1
10-NP/SP1
lem HA
LEM HA 25-NP
lem HA 25 NP/SP1
25-NP
LEM components
lem HA 25 NP
electronic series and parallel circuits flowing
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100-NP
Abstract: lem ha 2000 NP-40 battery lem module circuit TOP 242 PN lem module ha Transducer TBD lem module 100A lem 50 LEM Components
Text: Current Transducer LAX SERIES Ref LAX 100-NP IPN = 50-100 A Provisional Datasheet Electrical Data Specifications Symbol 50 At Unit Min Typ 100 At Max Min Conditions Typ Max 1 IPN At Primary current, measuring range IP At -150 +150 -160 Measuring resistance
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100-NP
100-NP
lem ha 2000
NP-40 battery
lem module
circuit TOP 242 PN
lem module ha
Transducer TBD
lem module 100A
lem 50
LEM Components
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transistor KIN
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -AUGUST 1995 Q FEATU RES * Suitable for AF drivers and output stages * High collector current and Low Vct sat( C O M P LEM EN TA R Y T YP E BCP53 PA R TM A R KIN G D E T A ILS BCP56 B C P 5 6 - 10 B C P 5 6 - 16
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OT223
BCP53
BCP56
100nA
VCB--30V
500mA,
150mA,
BCP56-10
transistor KIN
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1R SOT89
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -JA N U A R Y 1996 O C O M P LEM EN T A R Y TYPE - SXT A92 P A R T M A R K IN G D E T A IL - S ID ABSOLUTE M A X IM U M RATINGS. PARAM ETER V A LU E U N IT V CBO 300 V Collector-Emitter Voltage V CEO
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100nA,
300jis.
1R SOT89
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transistor marking code 443
Abstract: IMX6 marking code 18 6pin F MARKING 6PIN
Text: IMX6 Transistor, dual, NPN Features • • • • • Dimensions Units : mm available in SMT6 (IMD, SC-74) package package marking: X6 package contains two independent NPN transistors (2SC2413K) same size as UMT3 (UMT, SC-70) so same placement machine can be
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SC-74)
2SC2413K)
SC-70)
transistor marking code 443
IMX6
marking code 18 6pin
F MARKING 6PIN
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bcs47
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. e M BBOÌ2 PINNING - SOT323 PIN DESCRIPTION 1 base 2
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BC846W;
BC847W;
BC848W
OT323
MBC870
BC846W:
BC846AW
BC846BW
BC847W:
bcs47
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Untitled
Abstract: No abstract text available
Text: S IE M E N S PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in T V sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F N 20 NPN
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Q62702-F1059
OT-89
35L05
fl235b05
0535bG5
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MSCQ2
Abstract: t 317 transistor
Text: Microsemi W ntertown, M A 0Î172 PH: S17 S26-0404. F A X <617) #24-1235 2N2369A Features 40 Volts 200mAmps • Meats MIL-S-19500/317 • Iiolector-Sase Voftage 40V • (Jollector Current 200 mA • I-ast Switching 3 0 nS NPN BIPOLAR TRANSISTOR Maximum Ratings
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MIL-S-19500/317
S26-0404.
2N2369A
200mAmps
MSCQ277A
MSCQ2
t 317 transistor
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT689B I S S U E 3 - O C T O B E R 1995 _ FEATU RES * G ain o f 400 at lc=2 A m p s a n d lo w saturation v o lta ge * Extrem ely lo w e q u iva le nt o n -re sistan ce; R CElMti 9 2 m Q at 3 A
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OT223
FZT689B
FZT789B
FZT689B
300ji
lc/lBa10
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BCX20
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon A F Transistors BCX 58 BCX 59 • High current gain • Low collector-emitter saturation voltage • Complementary types: B C X 78, B C X 79 PNP Type BCX BCX BCX BCX BCX BCX Marking 58 58 58 59 59 59 VIII IX X VIII IX X Ordering Code
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Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
flH35b05
BCX58
BCX20
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Untitled
Abstract: No abstract text available
Text: UG1A THRU UG1D MINIATURE ULTRAFAST PLASTIC RECTIFIER Voltage - 50 to 200 Volts C u rre n t - 1.0 Amperes FEATURES Ideally suited for use in very high frequency switch ing power supplies, inverters and as free wheeling diodes Plastic package has Underwriters Laboratories
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D0-204AL,
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LE17
Abstract: bup41
Text: SEMELAB B U P40 O4 1 S O A -I -7 C o U « lo r T o E rrv.li«« V o lt » « « . V « - V 1,-le -3 -5 - 7 -1 0 -J -J -5 - 7 -1 0 0 C o lu t ili# lo B a u Vo*N>u« V c - V t 1— I-1 \ N v\ \ % % \ IV« / in -«0 -««I Coliocso» C v n a n t . le - A S E M E L A B L T D . , C O V c N T R Y RO AO . LU T 7 E n v Y 0 R TM . IE IC S LE1 7 <U8
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DM10107
Abstract: No abstract text available
Text: D M 1 0 1 0 7 M C I 0 1 0 7 t r ip le E X C L U S IV E - O R /N O R g e n e ra l d e s c rip tio n fe a tu re s The D M 1 0 1 0 7 trip le gate is a low p o w er, high speed, E C L logic device w ith the standard E C L high Z inputs and open e m itte r o utputs. This
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DM10107
DM10107
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Motorola 90 31 te 2482
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for UHF linear and large-signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts Minimum Gain = 8.0 dB
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54F373
Abstract: No abstract text available
Text: Signetìcs 54F273 Flip-Flop Octal D Flip-Flop Product Specification Military Logic Products DESCRIPTION The 5 4 F 2 7 3 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The com m on buffered Clock CP and Master R eset (M R ) inputs
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54F273
500ns
54F373
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124ET
Abstract: PDTA124ET
Text: DISCRETE SEMICONDUCTORS PDTC124ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET
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PDTC124ET
PDTC124ET
SCA63
15002/00/05/pp8
124ET
PDTA124ET
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Untitled
Abstract: No abstract text available
Text: sony C X A 1 3 1 5 P/M 8-bit D/A Converter Compatible with l2C Bus Description The CXA 1315P/M is developed as a S-bit 5 ch D/A converter compatible with PC bus. Features • Serial control through PC bus • 4 built-in general purpose I/O ports Digital I/O
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1315P/M
CXA1315M
0P-16P-LC1
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Marking Code 32
Abstract: l43 transistor transistor dk qe
Text: DISCRETE SEMICONDUCTORS a ffi S H E E T PDTC124XEF NPN resistor-equipped transistor 1998 Nov 11 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF
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PDTC124XEF
PDTC124XEF
SCA60
115104/00/01/pp8
Marking Code 32
l43 transistor
transistor dk qe
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ZTX502
Abstract: ZTX504 ZTX107 ZTX500 ZTX302 ZTX501 BCW15 ZTX503 BCW11 BCW13
Text: ZTX500 ZTX501 ZTX502 ZTX503 ZTX504 S5S'Zûif- BCW11 (BCW13) (BCW15) (BCW17) (BCW19) G E N E R A L D E S C R IP T IO N Th ese p la stic en capsu lated tra n sisto rs are designed fo r sm all and m edium signal a m p lificatio n from d.c. to radio freq u en cies. Typ ical
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35S-2ocf
ZTX300
ZT180
ZTX500
-F035-Category
ZTX500
BCW11)
ZTX501
BCW13)
ZTX502
ZTX502
ZTX504
ZTX107
ZTX302
ZTX501
BCW15
ZTX503
BCW11
BCW13
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bc847bc
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors BC 856. BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,
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Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
bc847bc
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Pls 153
Abstract: pls153 pls153n
Text: Philips Components-Signetics Document No. 853-0311 ECN No. 00749 Date of Issue O cto b e r 18, 1990 Status P ro du ct S pecification PLS153/A Programmable logic arrays 18x42x10 P ro gra m m a b le L ogic D evices DESCRIPTION FEATURES The P L S 153 and P L S 1 53 A are tw o -le ve l
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PLS153/A
18x42x10)
Pls 153
pls153
pls153n
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