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    LF TRANSISTOR Search Results

    LF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    LF TRANSISTOR Price and Stock

    TE Connectivity 8080-1G36-LF

    Conn Transistor Socket SKT 3 POS Solder ST Thru-Hole
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 8080-1G36-LF 642
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    TE Connectivity 8080-1G24-LF

    Conn Transistor Socket SKT 3 POS Solder ST Panel Mount
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 8080-1G24-LF 383
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    TE Connectivity 8080-1G25-LF

    8080-1G25-LF=TRANSISTOR SOCKET AS
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    Onlinecomponents.com 8080-1G25-LF 135
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    TE Connectivity 8080-1G3-LF

    Transistor Sockets and Adapters
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    Onlinecomponents.com 8080-1G3-LF
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    TE Connectivity 8080-1G7-LF

    Transistor Sockets and Adapters
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    Onlinecomponents.com 8080-1G7-LF
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    LF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor A7p

    Abstract: smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p
    Text: LF Driver ATA5279 with Channel Extension Using NMOS Antenna Multiplexer 1. Description Several automotive Passive Entry applications require more than the six LF antennas usually supported by the ATA5279 LF driver. Figure 1-1 on page 2 shows how to expand the device to drive a greater number 9 of LF antennas. In this proposal, an


    Original     		PDF ATA5279 ATA5279 smd transistor A7p smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p

    Untitled

    Abstract: No abstract text available
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA


    Original     		PDF OneNAND512 KFG1216x2A-xxB6) 512Mb KFG1216Q2A KFG1216D2A KFG1216U2A 63FBGA /63FBGA

    smd code A4p

    Abstract: RESISTOR 1K SMD SMD a1P A3N smd diode transistor smd zc 38 smd transistor A4p smd transistor A6N 3DC1515S-0477X ATA5279 smd diode code A4N
    Text: LF Wake-up Demonstrator ATAK5279-82 Using Six-fold Antenna Driver ATA5279 1. General Description The demonstrator is intended to show LF wake-up functionality using the new six-fold LF antenna driver ATA5279 and the 3D receiver ATA5282. The demonstrator may


    Original     		PDF ATAK5279-82 ATA5279 ATA5279 ATA5282. 07/08notice. smd code A4p RESISTOR 1K SMD SMD a1P A3N smd diode transistor smd zc 38 smd transistor A4p smd transistor A6N 3DC1515S-0477X smd diode code A4N

    4894B

    Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
    Text: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring


    Original     		PDF ATAK5278-82 ATA5278 ATA5282. ATA5278 ATA5282, 4894B 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols

    samsung 2GB Nand flash 121 pins

    Abstract: SLC NAND endurance 100k
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 KFN2G16Q2M-DEB5 63FBGA samsung 2GB Nand flash 121 pins SLC NAND endurance 100k

    KFG1216x2A-xxB5

    Abstract: 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report 63FBGA KFG1216D2A KFG1216Q2A KFG1216U2A
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512 KFG1216x2A-xxB5) 512Mb KFG1216Q2A 63FBGA /63FBGA KFG1216D2A KFG1216U2A KFG1216x2A-xxB5 512MB NOR FLASH mlc nand flash lsb msb OneNand DRAM SAMSUNG 256Mb NAND Flash Qualification Report KFG1216D2A KFG1216Q2A KFG1216U2A

    Flash Memory datasheet mmc

    Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
    Text: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB5) KFN2G16Q2M-DEB5) KFM1G16Q2M-DEB5 63FBGA KFN2G16Q2M-DEB5 80x11 KFG1G16Q2M) Flash Memory datasheet mmc TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 KFM1G16Q2M-DEB5

    Untitled

    Abstract: No abstract text available
    Text: OneNAND256 KFG5616x1A-DEB6 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB6


    Original     		PDF OneNAND256 KFG5616x1A-DEB6) OneNAND256 KFG5616Q1A-DEB6 KFG5616D1A-DEB6 KFG5616U1A-DIB6 67FBGA /48TSOP1

    FUN-JIN

    Abstract: gst5009 GT24-03S TAIMAG IH-002 IC Plus gt2403s DATASHEET GST5009 FUN-JIN GT24 taimag H5091NL
    Text: IP1001 LF APPLICATION NOTE Purpose: This application note provides some useful configurations such as LED mode setting, regulator control & power source, hardware setting and power consumption… etc. IP1001 LF Interface Diagram LED 125Mhz 25Mhz Configuration


    Original     		PDF IP1001 zhM521 zhM52 1001PI FUN-JIN gst5009 GT24-03S TAIMAG IH-002 IC Plus gt2403s DATASHEET GST5009 FUN-JIN GT24 taimag H5091NL

    samsung "nor flash" sensing

    Abstract: 63FBGA KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.2


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 63FBGA KFN2G16Q2M-DEB6 80x11 KFG1G16Q2M) samsung "nor flash" sensing KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6

    SAMSUNG 256Mb NAND Flash Qualification Report

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability samsung toggle mode NAND Samsung Electronics. NAND flash memory BLOCK NAND Flash Qualification Reliability samsung dual lcd 63FBGA KFG5616D1M-DEB KFG5616Q1M
    Text: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)


    Original     		PDF OneNAND256 KFG5616Q1M-DEB 63FBGA /48TSOP1 KFG5616D1M-DEB KFG5616U1M-DIB SAMSUNG 256Mb NAND Flash Qualification Report SAMSUNG 256Mb NAND Flash Qualification Reliability samsung toggle mode NAND Samsung Electronics. NAND flash memory BLOCK NAND Flash Qualification Reliability samsung dual lcd KFG5616D1M-DEB KFG5616Q1M

    tsop1748

    Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
    Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


    Original     		PDF OneNAND128 KFG2816Q1M-DEB 67FBGA /48TSOP1 KFG2816D1M-DEB KFG2816U1M-DIB tsop1748 onenand block map onenand Flash Memory SAMSUNG OneNAND

    1E49Ah

    Abstract: Samsung nand MLC
    Text: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5


    Original     		PDF OneNAND256 KFG5616x1A-DEB5) OneNAND256 KFG5616Q1A-DEB5 KFG5616D1A-DEB5 KFG5616U1A-DIB5 67FBGA /48TSOP1 1E49Ah Samsung nand MLC

    SLC NAND endurance 100k

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


    Original     		PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k

    SLC NAND endurance 100k years

    Abstract: 802AH
    Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


    Original     		PDF OneNAND128 KFG2816Q1M-DEB OneNAND128 KFG2816D1M-DEB KFG2816U1M-DIB 67FBGA /48TSOP1 SLC NAND endurance 100k years 802AH

    Samsung oneNand Mux

    Abstract: onenand KFG1216Q2M-DEB oneNand flash 63FBGA KFG1216D2M-DEB KFG1216U2M KFG1216U2M-DIB KFH1G16Q2M-DEB 8049H
    Text: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. VCC core & IO Temperature PKG 512Mb KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF) 1Gb KFG1216U2M-DIB 3.3V(2.7V~3.6V) Industrial


    Original     		PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DEB 63FBGA KFG1216D2M-DEB KFG1216U2M-DIB KFH1G16Q2M-DEB Samsung oneNand Mux onenand KFG1216Q2M-DEB oneNand flash KFG1216D2M-DEB KFG1216U2M KFG1216U2M-DIB KFH1G16Q2M-DEB 8049H

    8017h

    Abstract: 804aH Datasheet ONENAND KFG1216D2M-DCB KFG1216D2M-DEB KFG1216Q2M-DCB KFG1216Q2M-DEB KFG1216U2M-DIB KFH1G16D2M-DEB KFH1G16Q2M-DEB
    Text: OneNAND512/OneNAND1GDDP FLASH MEMORY OneNAND SPECIFICATION Density Part No. V CC core & IO Temperature PKG 512Mb KFG1216Q2M-DCB 1.8V(1.7V~1.95V) Commercial 63FBGA(LF) KFG1216Q2M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216D2M-DCB 2.65V(2.4V~ 2.9V) Commercial


    Original     		PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DCB 63FBGA KFG1216Q2M-DEB KFG1216D2M-DCB KFG1216D2M-DEB 8017h 804aH Datasheet ONENAND KFG1216D2M-DCB KFG1216D2M-DEB KFG1216Q2M-DCB KFG1216Q2M-DEB KFG1216U2M-DIB KFH1G16D2M-DEB KFH1G16Q2M-DEB

    280s2

    Abstract: tl package
    Text: Emitter / Sensor Pairs Infrared Emitters Raft. rwmm . Radiant Flu* Feature* I B M IS654A . JàattM l Current - ' 3mm Dia. Tl Package 1.5 lF=40mA IS658A Side Emitting 0.7(lF=20mA) IS656A Side Emitting Compatible with Isocom Schmitt Trigger Detectors 0.75(lF=20mA


    OCR Scan     		PDF IS654A IS658A IS656A IS655A IS659D IS657A 280S2 IS657B IS657C IS657D 280s2 tl package

    HOA-1873

    Abstract: 187313 1873 TRANSISTOR ST DARLINGTON TRANSISTOR honeywell hoa transistor ac 050 HOA 1873-12
    Text: HOA 1873 — Transmissive Switch i7 *-'* * Com­ ponents Characteristics Sensor aperture Test condition On-«taie collector current Off-state collector current Saturation voltage LED forward voltage VCE - 5 V lF as shown VCE - 10 V lF - 0 lc and lF as shown


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS MCT5210 MCT5211 AIGaAs LED/ PHOTOTRANSISTOR OPTOCOUPLÈR FEATURES * Current Transfer Ratio MCT5210, >70% at lF = 3.0 mA • MCT5211, >110% at lF = 1.0 mA • Saturation C TR -M C T5211, >100% at lF = 1.6 mA * High Isolation Voltage, 5300 VDC * Underwriters Lab Flle #E52744


    OCR Scan     		PDF MCT5210, MCT5211, T5211, E52744 MCT5210 MCT5211 MCT5210/5211 MCT5210/6211

    J348

    Abstract: No abstract text available
    Text: MCT5210 MCT5211 SIEMENS AIGaAs LED/ Phototransistor Optocoupler FEATURES • Current Transfer Ratio MCT5210, >70% at lF=3.0 mA MCT5211, >110% at lF=1.0 mA • Saturation C TR -M C T 5211, >100% at lF=1.6 mA • High Isolation Voltage, 5300 VACRMS • Underwriters Lab File #E52744


    OCR Scan     		PDF MCT5210, MCT5211, E52744 MCT5210/5211 foMCT5210/5211 MCT5210/5211 J348

    TO3001

    Abstract: 11 opto 4pin TCDT1120 TCET1102 C4160
    Text: VISHAY Vishay Telefunken ▼ Opto Isolators for Power Supplies S 5 « FIMKO 0884 Characteristics Dim. Fig- Package Part Number CTR Vio V CEO lF and lC V CEsat lF=10 mA Rl= 100Q % V|QTM ton/toff @ lF mA mA us | mA - No Base Connection and CTR Ranking SC' C


    OCR Scan     		PDF TCDT1100 TCDT1101 TCDT1102 TCDT1103 CNY75 TCET1107 TCET1108 TCET1109 TO3001 11 opto 4pin TCDT1120 TCET1102 C4160

    Untitled

    Abstract: No abstract text available
    Text: Photo Darlington High Sensitivity, without Base connection Part 1mA Vce«»/ - m H24B1 1Q0Q lF=5ntA 3 H24B2 400(F=5m A)3 H24B3 750 (lF=5mA) 3 ISPD60 100 ISPD61 500 ISPD62 ISPD63 ISPD64 ISPD65 MOC8020 Photo Darlington Transistor Detector Base Lead Not Connected


    OCR Scan     		PDF H24B1 H24B2 H24B3 ISPD60 ISPD61 ISPD62 ISPD63 ISPD64 ISPD65 MOC8020

    Untitled

    Abstract: No abstract text available
    Text: 2DI30M -050 3 oa ! Outline Drawings POWER TRANSISTOR MODULE • W A : Features • f t h FE High DC Current Gain • High Speed Sw itching : A p p lica tio n s > /< —£ • General Purpose Inverter U ninterruptible Power Supply • N C lf ^ f lf tt#


    OCR Scan     		PDF 2DI30M E82988 I95t/R89)