Untitled
Abstract: No abstract text available
Text: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source
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RQ3E130MN
E130MN
R1102A
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2sc3906k
Abstract: No abstract text available
Text: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K
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2SC4102
2SC3906K
2SC4102
OT-323
SC-70)
OT-346
SC-59)
2SA1579
2SA1514K
2sc3906k
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Untitled
Abstract: No abstract text available
Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2450KE
450mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS230AE2
5A/30A*
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R8005ANX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D
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2SAR544P
2SAR544D
2SAR544P
SC-62)
OT-89>
2SCR544P
2SCR544D
-50mA)
SC-63)
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Untitled
Abstract: No abstract text available
Text: SMLK1 / SMLK2 series PSML2 Data Sheet lFeatures lOutline • High heat radiation "PSML2" series • Low package by flat frame structure • High Luminous Intensity lSize 1006 0402 4520 (1808) 4.5x2.0mm (t=0.6mm) 1.0×0.6mm (t=0.2mm) Color Type WB lDimensions
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SMLK18WBJBW
SMLK18WBJDW
R1102A
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Untitled
Abstract: No abstract text available
Text: RCD060N25 Nch 250V 6A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCD060N25
530mW
SC-63)
OT-428>
C06N25
R1102A
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Untitled
Abstract: No abstract text available
Text: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).
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RQ3E150MN
RQ3E15
R1102A
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2SCR514p
Abstract: No abstract text available
Text: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)
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2SAR514P
SC-62)
OT-89>
2SCR514P
-300mA/
-15mA)
R1102A
2SCR514p
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Untitled
Abstract: No abstract text available
Text: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCD100N20
182mW
SC-63)
OT-428>
C10N20
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)
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2SC5824
SC-62)
OT-89>
2SA2071
A/200mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode
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SCT2160KE
160mW
O-247
R1102B
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Untitled
Abstract: No abstract text available
Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)
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2SA2094
2SC5866
SC-96)
R1102A
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Untitled
Abstract: No abstract text available
Text: R6030ENZ Nch 600V 30A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.130W ID 30A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6030ENZ
R1102A
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2SCR514R
Abstract: No abstract text available
Text: 2SAR514R Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A TSMT3 Collector Base Emitter 2SAR514R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)
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2SAR514R
SC-96)
2SCR514R
-300mA/
-15mA)
R1102A
2SCR514R
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Untitled
Abstract: No abstract text available
Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825
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2SA2701
2SA2702
2SA2071
SC-62)
OT-89>
2SC5824
2SC5825
-500mV
2SA2072
SC-63)
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RS1e240
Abstract: No abstract text available
Text: RS1E240GN Nch 30V 24A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 24A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source
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RS1E240GN
R1102A
RS1e240
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C5001 transistor
Abstract: transistor C5001 2SC5001 transistor marking C5001
Text: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)
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2SC5001
SC-63)
OT-428>
2SA1834
R1102A
C5001 transistor
transistor C5001
2SC5001
transistor marking C5001
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C5103
Abstract: transistor C5103 C5103 Transistor
Text: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)
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2SC5103
SC-63)
OT-428>
2SA1952
C5103
R1102A
C5103
transistor C5103
C5103 Transistor
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Untitled
Abstract: No abstract text available
Text: SiC Power Module Datasheet BSM120D12P2C005 lApplication lCircuit diagram Moter drive 1 Inverter, Converter Photovoltaics, wind power generation. 10 9 8 N.C Induction heating equipment. 3,4 5 6 7(N.C) lFeatures 2 1) Low surge, low switching loss.
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BSM120D12P2C005
R1102B
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode RB228NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB2281 NS100 lFeatures 1 1) Cathode common dual type 2) Low IR LPDS 3) High reliability 4) AEC-Q101 qualified lConstruction
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RB228NS100
RB2281
NS100
AEC-Q101
O263S
R1102A
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R6020ENX
Abstract: No abstract text available
Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6020ENX
O-220FM
R1102A
R6020ENX
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode RBQ30NS65A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ30NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar
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RBQ30NS65A
BQ30NS
O263S
R1102A
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