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    Renesas Electronics Corporation SLG46857AP-DIP

    Renesas Electronics 20-pin DIP Proto Board with additional PINs on top. Perfect for breadboarding and fast prototypes.
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    Mouser Electronics SLG46857AP-DIP
    • 1 $6.07
    • 10 $5.54
    • 100 $4.84
    • 1000 $4.33
    • 10000 $4.33
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    Renesas Electronics Corporation SLG46857AP-SKT

    Renesas Electronics SLG4SA14-30x31 socket adapter, 50 SLG46857-AP samples. For use with : - SLG4DVKADV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SLG46857AP-SKT
    • 1 $78.34
    • 10 $70.53
    • 100 $59.12
    • 1000 $59.12
    • 10000 $59.12
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    ams OSRAM Group AS7057A Algorithm Evaluation Kit

    Data Conversion IC Development Tools
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AS7057A Algorithm Evaluation Kit
    • 1 $333.16
    • 10 $333.16
    • 100 $333.16
    • 1000 $333.16
    • 10000 $333.16
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    Renesas Electronics Corporation SLG46857-AP

    Renesas Electronics Automotive GreenPAK Mixed Signal Matrix
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SLG46857-AP
    • 1 -
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    • 10000 $1.23
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    Broadcom Limited BCM53457A0IFSBLG

    Switch ICs - Various 16x1G+8x1G/2.5G + 4x10G Switch, w/ CPU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BCM53457A0IFSBLG
    • 1 -
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    • 1000 $317.7
    • 10000 $317.7
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    LG 57A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20R0

    Abstract: R5 Series T85 0R25 RESISTOR K045 MRVL 90 MRVL ICR0805 R020 R0603 R0805
    Text: S u r fo c e M o u n t C o m p o n e n l s stRttsRtf. IYPE WCR 'o \6'" \O t@j POWTR WATTS (MM) RTS.RANGT IOI.tRAN(T DlMtNSr0l{ + (0HMS) L H W w(R0402 0.063 4Ri-2M2 w(R0603 0.0625 w(R0805 d f.JtAx v0r.T5 I(R (ppm/'() AMBIINT rtMP"( NOITS purpose Generol lhirkfilmrhips.


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    PDF R0402 R0603 R0805 lRO-20M R20r0 fi1206 00f0300 rG20t0 Rl206 20R0 R5 Series T85 0R25 RESISTOR K045 MRVL 90 MRVL ICR0805 R020 R0603 R0805

    IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies

    Abstract: No abstract text available
    Text: Terminal Blocks BLOCKS Innovative Engineering Solutions Contents Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 BARRIER STYLE TERMINAL BLOCKS ] Single Row SE/SEI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6


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    PDF

    LEAPER-3

    Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
    Text: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.


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    PDF PIC16C52/54/54A PIC16C55/56/57/57A/58A PIC12C508/509 PIC16C61 PIC16C620/621/622 PIC16C71/710 PIC16C62/63/64/65 PICC16C72/73/74/74A PIC16C83/84 PIC17C42/42A/43/44 LEAPER-3 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver

    14 pin relay

    Abstract: 11 pin relay Socket IEC 947-7-1 2.5 mm terminal block 10 pin relay IEC 947-7-1 terminal block 400v IEC 947-7-1 terminal block TB521 68000-10 IEC 947-7-1 400v 14 pin relay socket
    Text: Curtis TERMINAL BLOCKS Curtis We Build Confidence! Filtered Power Entry RFI Filters Custom Filters Curtis Family of Products Terminal Blocks Terminal Blocks DIN Rail Liquid Level Controllers PCB Mount Blocks Custom Terminal Blocks Curtis Industries A Div. of Powers Holdings, Inc.


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    LG 57A

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT40M70LVR 400V 57A 0.070« ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT40M70LVR O-264 MIL-STD-750 O-264AA LG 57A

    LG 57A

    Abstract: 378r
    Text: A dvanced P o w er T e c h n o l o g yr Q D APT60M90JN 600V 57A 0.0900 "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT60M90JN E145592 60M90JN APT60M90JN OT-227 LG 57A 378r

    Untitled

    Abstract: No abstract text available
    Text: APT40M70LVR ADVANCED W jA P o w e r T e c h n o lo g y o.o7on 57a 4 oov POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


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    PDF APT40M70LVR O-264

    LG 57A

    Abstract: APT60M
    Text: 'W w/T O D ADVANCED P ow er Te c h n o l o g y ' APT60M90JN 600V 57A 0.090ft $ Û " U L Recognized" File No. E145592 S ISO TO P* POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V All Ratings: T c


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    PDF APT60M90JN 090ft E145592 LG 57A APT60M

    KTY 88

    Abstract: KTY 20-6 Q62902-B152-F222 Q62902-B156-F222 Q62703-N0191 Q62902-B155 Q62702-P1088 Q62702P946 Q62703-N209 Q62902-B155-F222
    Text: Alphanumerische Bestellnummern Q-Nummem Alphanumeric Ordering Codes (Q numbers) Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer Ordering code


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    PDF Q60215-Y111-S5 Q60215-Y1111 Q60215-Y1112 Q60215-Y1113 Q60215-Y62 Q60215-Y63-S1 Q60215-Y65 Q60215-Y66 Q60215-Y67 Q62607-S60 KTY 88 KTY 20-6 Q62902-B152-F222 Q62902-B156-F222 Q62703-N0191 Q62902-B155 Q62702-P1088 Q62702P946 Q62703-N209 Q62902-B155-F222

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y APT60M90JN 600V 57A 0.090Í2 S Û "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV* SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT60M90JN E145592 60M90JN OT-227

    FP 310

    Abstract: Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A
    Text: Alphanumerisches Typenverzeichnis Alphanumeric Type Index Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Typ Type Bestellnummer Ordering code 4N25 4N26


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    PDF 6N135 6N136 6N138 6N139 BPW21 H62702-P3051 Q62702-P3009 Q62702-P3057 Q62702-P3058 Q62702-P3054 FP 310 Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A

    diode 57

    Abstract: 090Q BFC17
    Text: lili itti lili SEME BFC17 LAB 4TH GENERATION MOSFET S O T -2 2 7 Package Outline. Dimensions in mm inches 1 1 8 (0 463 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 600V 57A I D(cont) ^DS(on) Terminal 1 Terminal 3 Source* Gate Terminal 2 Terminal 4


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    PDF BFC17 OT-227 MIL-STD-750 000153b diode 57 090Q

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BDX45

    Abstract: BDX47 BDX42 BDX43 BDX44 BDX46
    Text: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors fo r industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a TO-126 plastic envelope w ith collector connected


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    PDF BDX45 BDX46 BDX47 O-126 BDX42, BDX43 BDX44 BDX45 BDX46 BDX47 BDX42

    VEB mikroelektronik

    Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
    Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP


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    PDF 57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft

    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9


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    PDF 10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA Product Preview MCM6726 128K x 8 Bit Fast Static Random Access Memory W J PACKAGE 4 0 0 -M IL S O J C A S E 8 57A The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 x 8 bits. This device is fabricated using high-performance silicon-gate


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    PDF MCM6726 400-mil MCM6726

    LG 57A

    Abstract: No abstract text available
    Text: APT40M70LVR • R A dvanced W .\A p o w e r Te c h n o lo g y " 400v 57 a 0 .070q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    PDF APT40M70LVR O-264 LG 57A

    Untitled

    Abstract: No abstract text available
    Text: P D 9 .1650 International I ö r Rectifier FA57SA50LC HEXFET Power MOSFET • • • • • • • • • Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Gate Charge Device


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    PDF FA57SA50LC OT-227

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    LTS23305

    Abstract: HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k
    Text: Cross Reference For detailed comparison, please always refer to m anufacture r's specs Manufacturer Part Number CSC P/N A B C HP 50 82 -761 0 CSS-3126-11 X X X HP 5 0 8 2-7 6 1 1 CSS-31 2E 1 1 X X X D j 0.30 F" C f ’t ‘ G " C p N •- 0 .3 0 r~ 'i j N


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    PDF CSS-3126-11 CSS-31 CSS-313E-11 CSS-312Y-11 CSS-310Y-11 CSS-416E-11 CSS-561 CSS-5614D TLUR355S LTS23305 HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k

    IRFPO44

    Abstract: IRFP045 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90
    Text: HE D I 4ÛSS4S2 aGdâ71E Data Sheet No. PD-9.583A 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER X R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFPÜ44 IRFPQ45 HEXFET TRANSISTORS N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-247AC TO-3P Plastic Package


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    PDF O-247AC C-467 IRFP044, IRFP045 T-39-15 C-468 IRFPO44 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90

    Untitled

    Abstract: No abstract text available
    Text: TILI 56, TIL157A OPTOCOUPLERS 02492, SEPTEMBER 1978-REVISED JUNE 1989 UL LISTED - FILE #E 6 5 0 8 5 • GaAs-Diode Light Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor • High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA


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    PDF TIL157A 1978-REVISED TIL113 TIL119A TIL156,

    C557B

    Abstract: C556B C558B c557 C556 C558 BC556A bc557b LG 57A BC556
    Text: BC556,A,B BC557,A,B,C BC558B M AXIM UM RATINGS S ym b o l BC556 BC557 BC558 C o lle c to r -E m itte r V o lta g e R ating v CEO -6 5 -4 5 - 30 U n it Vdc C o lle c to r-B a s e V o lta g e v CBO -8 0 - 50 - 30 Vdc E m itte r-B a s e V o lta g e Ve b o -5 .0


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    PDF BC556 BC557 BC558 BC558B T0-226AA) C557B C556B C558B c557 C556 C558 BC556A bc557b LG 57A