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Catalog Datasheet	MFG & Type	Document Tags	PDF
LH5168ST Abstract: No abstract text available Text: CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168ST is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 500 ns (MAX.) • Power consumption: Operating:	OCR Scan	28-pin, LH5168ST 28-PIN LH5168ST TSOP28-P-0813)	PDF
LH5168ST Abstract: SHARP 357 Text: CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168ST is a static RAM organized as 8,192 x 8 bits. II is fabricated using silicon-gate CMOS process technology. • Access tim e: 500 ns (MAX.) • Current consum ption:	OCR Scan	LH5168ST LH5168ST 28-pin, TSOP28-P-0813) SHARP 357	PDF
BNK-17 Abstract: No abstract text available Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85	OCR Scan	LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17	PDF
100 10L AD Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20 Text: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10	OCR Scan	LH5116/NA/D-10 100LQFP H/AHN/AHD/AHT-10L LH5164AVN/AVT LH5164AVHN/AVHT LH5164ASHN/ASHT LH51256/N-10L LH51V1032C4M-15 LH51V1032C4M-17 LH5268A/AN/AD-1 100 10L AD LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20	PDF