Untitled
Abstract: No abstract text available
Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such
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DK-8381
KLED0002E01
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pa 17105-3608
Abstract: 17105-3608 tyco 17105-3608 "electrical connector"
Text: Instruction Sheet High-Power Light Emitting Diode LED 408-10278 Light Sockets 2008639-[ ] for AMP LIGHT GUIDES* Light Pipes 01 APR 09 Rev A 2. DESCRIPTION Light Pipe 2058295-[ ] (Available Separatetly) The light socket consists of a locking ring, contact
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LN184
Abstract: 24525
Text: Infrared Light Emitting Diodes LN184 Unit : mm M Di ain sc te on na tin nc ue e/ d , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Features Spherical lens Infrared light emission close to monochromatics light : λP = 880 nm
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LN184
LN184
24525
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical
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LN189S
LN189S
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189M
100mA
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical
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LN189L
LN189L
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RL50-WH744WD5
Abstract: 20000 mcd white led DR-2550 LED 20000 mcd white diode specification LED 18000 mcd Light-emitting diode light sensor 3 bin RL50 EXCEED White LED 15000 mcd
Text: Light-emitting diode Specification For Approval Customer: Description: Part number: Date: LED-LAMP RL50-WH744WD5 2005-10-14 Approved By: Prepared By: Approval Check Design Sales ChenDan EXCEED PERSEVERANCE ELECTRONICS IND CO., LTD www.exceedled.com Light-emitting diode
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RL50-WH744WD5
DR-2550.
RL50-WH744WD5
20000 mcd white led
DR-2550
LED 20000 mcd white
diode specification
LED 18000 mcd
Light-emitting diode
light sensor 3 bin
RL50 EXCEED
White LED 15000 mcd
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf = 20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)
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LN189L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf =20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)
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LN189S
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm
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fiber optic FM Modulator
Abstract: STM Thermistor NDL7603P NDL7620P NDL7701P NDL7705P NDL7910P NX8562LB NX8562LB-BA NX8562LB-CA
Text: DATA SHEET LASER DIODE NX8562LB 1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber PMF . This device is designed as CW light source and ideal for transmission systems in which external modulators are
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NX8562LB
NX8562LB
14-pin
fiber optic FM Modulator
STM Thermistor
NDL7603P
NDL7620P
NDL7701P
NDL7705P
NDL7910P
NX8562LB-BA
NX8562LB-CA
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:
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LN162S
CTRLR102-001
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ETC 529 DIODE
Abstract: NDL7910P NX7460LE NX7461LE NX7660JC NX8501 NX8561JD NX8570SA NX8570SA-BA NX8570SA-CA
Text: PRELIMINARY DATA SHEET LASER DIODE NX8570SA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SA is a 1 550 nm laser diode with wavelength monitor function. This device is designed as CW light source and ideal for transmission systems in which external modulators are
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NX8570SA
NX8570SA
14-pin
ETC 529 DIODE
NDL7910P
NX7460LE
NX7461LE
NX7660JC
NX8501
NX8561JD
NX8570SA-BA
NX8570SA-CA
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Untitled
Abstract: No abstract text available
Text: 3GE » NEC • L 4 5 7 5 5 5 005^515 T ■ ELECTRONICS INC T-4 -é>*7 LIGHT EMITTING DIODE ._/ NDL4201A 850 nm O PTICA L FIB ER COM M UNICATIONS AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4201A is an AIGaAs double heterostructure light emitting diode designed for a light source of medium distance and
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NDL4201A
NDL4201A
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DIODE T53
Abstract: NDL4103A b427525 NDL4103 T53 diode
Text: INECE b42?525 D037MbS TS3 L2E D LIGHT EMITTING DIODE N E C NDL4103A ELECTRONICS INC 8 5 0 nm O PTIC AL FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4103A is an AIGaAs double heterostructure light emitting diode, especially designed for a light source fo r optical fiber
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D037MbS
NDL4103A
NDL4103A
b427525
00374b?
DIODE T53
NDL4103
T53 diode
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T427
Abstract: NDL4201B
Text: L427SES OOEÌSl? 3 3QE D N E C EL EC TRONICS INC r-m -'ô 7 LIGHT EMITTING DIODE NDL4201B 850 n m OPTICAL FIBER COM M UNICATIONS AIGaAs LIGHT EMITTING DIODE D ESC R IP T IO N N D L4201B is an AIGaAs double heterostructure light emitting diode. It adopts a package with ball lens to achieve easy optical coupling.
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t427SaS
NDL4201
NDL4201B
b427SSS
002T21fl
NDL4201B
N0L4201A
NDL42018
T427
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NDL4201A
Abstract: No abstract text available
Text: 3GE » N E C • L457555 005^515 T ■ LIGHT EMITTING DIODE ELECTRONICS INC _ / NDL4201A 850 nm O P T IC A L F IB E R C O M M U N IC A T IO N S A IG aA s LIGHT EM IT TIN G DIODE D ESC R IP TfO N N D L4 2 0 1 A is an AIGaAs double heterostructure light emitting diode designed for a light source of medium distance and
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L457555
NDL4201A
NDL4201A
b427SSS-GDSc121t
N0L4201B
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Untitled
Abstract: No abstract text available
Text: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse
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mapj
Abstract: No abstract text available
Text: L427SES 3QE D N E C ELECTRONICS OOEÌSl? INC 3 r - H I -£>7 LIGHT EMITTING DIODE N D L4201 B 850 nm O P T IC A L F IB E R C O M M U N IC A TIO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4201B is an AIGaAs double heterostructure light emitting diode. It adopts a package with ball lens to achieve easy optical coupling.
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L427SES
L4201
NDL4201B
35MHz
b427SSS
002T21fl
NDL4201B
mapj
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AVERAGE QUASI PEAK AND PEAK DETECTOR
Abstract: nixie tube circuit
Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction
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RSIG diode
Abstract: TFK 347 P 2347 V139P PF126
Text: V 138 P • V 139 P Galiiumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Rotleuchtende Diode für allgemeine Anzeigezwecke Application: Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • M iniatur-Kunststoffgehäuse
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V139P
RSIG diode
TFK 347
P 2347
PF126
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diode hitachi
Abstract: No abstract text available
Text: HE8404SG GaAlAs Infrared Emitting Diode HITACHI Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. suitable for use as the light source in a wide range of optical control and sensing equipment. Features •
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HE8404SG
HE8404SG
8404SG
diode hitachi
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