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    2N6796

    Abstract: No abstract text available
    Text: 0 3 H A R R 2N6796 I S N-Channel Enhancem ent-M ode Power Field-Effect Transistor A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • 8.0A, 100V • rDS on = 0 .1 8 0 • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		2N6796 2N6796 LM0063 PDF