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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology


    Original     		PDF LN2306LT1G S-LN2306LT1G AEC-Q101 236AB) LN2306LT3G S-LN2306LT3G 3000/Tape 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2306LT1G 236AB) 3000/Tape LN2306LT3G 10000/Tape 06LT1G OT-23

    N06 MOSFET

    Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
    Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LN2306LT1G 236AB) 3000/Tape LN2306LT3G 10000/Tape OT-23 N06 MOSFET LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23