2sc2240 equivalent
Abstract: 2SC2240
Text: 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of
|
Original
|
PDF
|
2SC2240
2SC2240
2sc2240 equivalent
|
NTE26
Abstract: No abstract text available
Text: NTE26 Silicon NPN Transistor Low Noise Audio Amplifier Features: D VCEO = 120V Min D Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
|
Original
|
PDF
|
NTE26
NTE26
|
KTC3200
Abstract: KTc3200 BL KTA1268 rg 625 transistor ktc3200 BL-350
Text: SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B C The KTC3200 is a transistor for low frequency and low noise applications. A This device is designed to ower noise figure in the region of low signal
|
Original
|
PDF
|
KTC3200
KTC3200
270Hz
KTc3200 BL
KTA1268
rg 625
transistor ktc3200
BL-350
|
BCY79
Abstract: BCY59
Text: BCY79 LOW NOISE AUDIO AMPLIFIER DESCRIPTION The BCY79 is a silicon Planar Epitaxial PNP transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The NPN complementary type is BCY59. TO-18
|
Original
|
PDF
|
BCY79
BCY79
BCY59.
BCY59
|
2SC1815L
Abstract: 2SA1015 2SC1815
Text: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) •
|
Original
|
PDF
|
2SC1815
2SA1015
2SC1815L
2SA1015
|
toshiba 2SC732
Abstract: 2SC732TM
Text: 2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.) Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)
|
Original
|
PDF
|
2SC732TM
100Hz)
100Hz,
toshiba 2SC732
2SC732TM
|
2N2484
Abstract: CECC50002-129 J 2N2484
Text: 2N2484 LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N2484 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Products approved to CECC50002-129 available on request.
|
Original
|
PDF
|
2N2484
2N2484
CECC50002-129
J 2N2484
|
2N2484
Abstract: No abstract text available
Text: NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS.
|
Original
|
PDF
|
2N2484
2N2484
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B ᴌHigh DC Current Gain : hFE=70ᴕ700. A ᴌExcellent hFE Linearity O F : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.).
|
Original
|
PDF
|
KTC3199L
KTA1267L.
100Hz,
100mA,
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise
|
Original
|
PDF
|
2SC2712
150mA
2SC2712L-x-AE3-R
2SC2712G-x-AE3-R
2SC2712L-x-AL3-R
2SC2712G-x-AL3-R
2SC2712L-x-T92-R
2SC2712G-x-T92-R
OT-23
OT-323
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise
|
Original
|
PDF
|
2SC2712
150mA
2SC2712G-x-AE3-R
2SC2712G-x-AL3-R
2SC2712L-x-T92-R
2SC2712G-x-T92-R
OT-23
OT-323
OT-23/SOT-323
2SC2712-Y
|
2SC2458 GR
Abstract: 2SC2458 2SA1048
Text: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
|
Original
|
PDF
|
2SC2458
2SA1048
2SC2458 GR
2SA1048
|
Untitled
Abstract: No abstract text available
Text: KSC2784 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER • Complement to KSA1174 TO-92S ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
Original
|
PDF
|
KSC2784
KSA1174
O-92S
|
KTC3200
Abstract: KTc3200 BL rg 625 KTA1268 kta-1268
Text: SEMICONDUCTOR TECHNICAL DATA KTC3200 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES • The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal
|
OCR Scan
|
PDF
|
KTC3200
KTC3200
100//A,
100juA,
KTA1268.
KTc3200 BL
rg 625
KTA1268
kta-1268
|
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse
|
OCR Scan
|
PDF
|
2SC2240
2SC2240
|
Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges
|
OCR Scan
|
PDF
|
PN2483,
PN2484
O-92A
N2484
BOXt9477
8-e98EM
|
mpsa09
Abstract: MPS-A09 transistor D 982
Text: MPS-A09 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for preamplifier applications in audio amplifiers. • Collector-Emitter Breakdown Voltage — B V c E O ” 50 v dc (Min) @ lc = 1.0 m Adc • Low Noise Figure —
|
OCR Scan
|
PDF
|
MPS-A09
mpsa09
MPS-A09
transistor D 982
|
loya
Abstract: 2N3246
Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3246 is an NPN silicon transistor manufactured by the epitaxial planar process designed for small signal, low noise and low power audio amplifier applications. MAXIMUM RATINGS Ta =25°C SYMBOL Col 1ector- Base Voltage
|
OCR Scan
|
PDF
|
2N3246
500yA
30MHz
10kfi,
15kHz
loya
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance
|
OCR Scan
|
PDF
|
2SC3329
2SA1316
|
Untitled
Abstract: No abstract text available
Text: KSC1845 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER TO -92 • Complement to KSA992 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
OCR Scan
|
PDF
|
KSC1845
KSA992
|
Untitled
Abstract: No abstract text available
Text: KSC2784 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER • Complement to KSA1174 ABSOLUTE MAXIMUM RATINGS Ta=25°C j Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
|
OCR Scan
|
PDF
|
KSC2784
KSA1174
|
2SA1015
Abstract: 2SC1815 2SC181 Common emitter amplifier 2sc1815 toshiba
Text: TO SH IBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AMPLIFIER APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS. • • High Breakdown Voltage, High Current Capability : V c e o = 50V (Min.), I q = 150mA (Max.)
|
OCR Scan
|
PDF
|
2SC1815Â
150mA
2SA1015Â
2SA1015
2SC1815
2SC181
Common emitter amplifier
2sc1815 toshiba
|
low noise audio amplifier npn transistor
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2784 AUDIO FREQUENCY LOW NOISE AMPLIFIER • Complement to KSA1174 ABSOLUTE MAXIMUM RATINGS T*=25t Characteristic Sym bol Collector-Base Voltage Collector-Em ttter Voltage Em itter-Base Voltage Collector Current Base Current
|
OCR Scan
|
PDF
|
KSC2784
KSA1174
low noise audio amplifier npn transistor
|
2SC3381
Abstract: 2SA1349 oq120 2SC338
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC3381 SILICON NPN EPITAXIAL TYPE MONOLITHIC DUAL TYPE 2SC3381 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPLIFIERS 9.5 ±0.3
|
OCR Scan
|
PDF
|
2SC3381
2SA1349.
200X2
2SC3381
2SA1349
oq120
2SC338
|
