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    LOW NOISE VHF DUAL GATE MOSFET Search Results

    LOW NOISE VHF DUAL GATE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE VHF DUAL GATE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3n212

    Abstract: No abstract text available
    Text: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS


    Original     		PDF 3N212 3N212

    3SK180

    Abstract: No abstract text available
    Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.


    Original     		PDF ENN2129B 3SK180 3SK180] 3SK180

    k 2129 MOSFET

    Abstract: 3SK180
    Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.


    Original     		PDF ENN2129B 3SK180 3SK180] k 2129 MOSFET 3SK180

    Marking 2G2

    Abstract: No abstract text available
    Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. BG3123 VPS05604 BG3123R EHA07461 BG3123 BG3123R* OT363 Marking 2G2

    BG3430R

    Abstract: Marking G2 BCR108S
    Text: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range


    Original     		PDF BG3430R OT363 BG3430R Marking G2 BCR108S

    marking code g1s

    Abstract: BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp
    Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. BG3123 BG3123R OT363 marking code g1s BCR108S BG3123 BG3123R mosfet tetrode amp marking 125 marking 5 rf amp

    Untitled

    Abstract: No abstract text available
    Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. BG3123 BG3123R OT363

    AGC-10

    Abstract: BCR108S BG3123 BG3123R
    Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. BG3123 BG3123R OT363 AGC-10 BCR108S BG3123 BG3123R

    marking K1 sot363

    Abstract: AGC-10 BG3123 BG3123R VPS05604 152V16
    Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. VPS05604 BG3123 BG3123R EHA07461 OT363 BG3123R* Feb-27-2004 marking K1 sot363 AGC-10 BG3123 BG3123R VPS05604 152V16

    IG-14

    Abstract: No abstract text available
    Text: BG3123. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stages for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Optimized for UHF (amp. B) and VHF (amp. A) 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. BG3123 BG3123R EHA07461 OT363 IG-14

    Untitled

    Abstract: No abstract text available
    Text: BG3123. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stages for UHF and VHF -tuners e.g. NTSC, PAL • Optimized for UHF (amp. B) and VHF (amp. A) 2 • Integrated gate protection diodes 3 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3123. BG3123 VPS05604 BG3123R EHA07461 BG3123 BG3123R* OT363

    KDS DATE CODE

    Abstract: No abstract text available
    Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 BG3140R OT363 KDS DATE CODE

    MA2220

    Abstract: No abstract text available
    Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363 MA2220

    22100K

    Abstract: No abstract text available
    Text: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363 22100K

    Untitled

    Abstract: No abstract text available
    Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363

    G2 marking

    Abstract: BG3140R
    Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 BG3140R OT363 G2 marking BG3140R

    BG5120K

    Abstract: BCR108S
    Text: BG5120K Dual N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range


    Original     		PDF BG5120K OT363 BG5120K BCR108S

    KYS 30-40

    Abstract: BG5130R BCR108S FW-50
    Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners 1 with 3V up to 5V supply voltage 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction


    Original     		PDF BG5130R OT363 KYS 30-40 BG5130R BCR108S FW-50

    KYS 30-40

    Abstract: BG5130R BCR108S
    Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners with 3V up to 5V supply voltage 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction


    Original     		PDF BG5130R OT363 KYS 30-40 BG5130R BCR108S

    Untitled

    Abstract: No abstract text available
    Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction


    Original     		PDF BG5120K OT363

    BCR108S

    Abstract: BG5120K k914
    Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction


    Original     		PDF BG5120K OT363 BCR108S BG5120K k914

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 VPS05604 EHA07215 OT363

    BCR108S

    Abstract: BG3230 mosfet 2g2
    Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 OT363 BCR108S BG3230 mosfet 2g2

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R OT363