Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LP3415ELT3G Search Results

    LP3415ELT3G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G S-LP3415ELT1G VDS= -20V RDS ON , [email protected], Ids@-4A = 60 mΩ RDS(ON), [email protected], Ids@-4A = 75 mΩ RDS(ON), [email protected], Ids@-2A = 85 mΩ 3 Features Advanced trench process technology


    Original     		LP3415ELT1G S-LP3415ELT1G 236AB) AEC-Q101 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V LP3415ELT1G RDS ON , [email protected], Ids@-4A = 60 mΩ RDS(ON), [email protected], Ids@-4A = 75 mΩ RDS(ON), [email protected], Ids@-2A = 85 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		LP3415ELT1G 236AB) 3000/Tape& LP3415ELT3G 10000/Tape& OT-23 PDF