LPCC 4x4 24
Abstract: 1031W HONEYWELL DBM GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
LPCC 4x4 24
1031W
HONEYWELL DBM
GMJ00004
HRF-SW1030
HRF-SW1031-B
HRF-SW1031-E
HRF-SW1031-TR
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Untitled
Abstract: No abstract text available
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
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Untitled
Abstract: No abstract text available
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features • • • • • • • • High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
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GMJ00004
Abstract: HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR LPCC 24
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
GMJ00004
HRF-SW1030-B
HRF-SW1030-E
HRF-SW1030-TR
LPCC 24
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Untitled
Abstract: No abstract text available
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
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GMJ00004
Abstract: HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features • • • • • • • • High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
GMJ00004
HRF-SW1030
HRF-SW1031-B
HRF-SW1031-E
HRF-SW1031-TR
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JESD 95-1, SPP-012
Abstract: No abstract text available
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency
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RFS1003
WLAN/802
11a/HIPERLAN/2
RFS1003
24-pin
DRFS-1003-0DSH
JESD 95-1, SPP-012
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Untitled
Abstract: No abstract text available
Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless
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RFS1006
RFS1006
24-pin
DRFS-1006-0DSH
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PRFS-1006-0005
Abstract: PRFS-1006-0006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0EVL RFS1006
Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless
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RFS1006
RFS1006
PRFS-1006-0005
PRFS-1006-0006
PRFS-1006-0007
PRFS-1006-0008
PRFS-1006-0009
PRFS-1006-0EVL
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ic 4933
Abstract: SE4100L-R SE4100L 27DS
Text: SE4100L GPS Receiver IC Applications Product Description The SE4100L is an integrated GPS receiver designed to receive the L1 signal at 1575.420 MHz. The receiver has a low IF architecture and integrates all of the amplifier, oscillator, mixer and IF sampling functions.
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SE4100L
SE4100L
27-DST-02
May-26-2009
ic 4933
SE4100L-R
27DS
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Untitled
Abstract: No abstract text available
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a
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RFS1003
RFS1003
WLAN/802
11a/HIPERLAN/2
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GMJ00004
Abstract: HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
GMJ00004
HRF-SW1030
HRF-SW1031-B
HRF-SW1031-E
HRF-SW1031-TR
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1031W
Abstract: ECU-E1C103KBQ 4x4 ecu GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
1031W
ECU-E1C103KBQ
4x4 ecu
GMJ00004
HRF-SW1030
HRF-SW1031-B
HRF-SW1031-E
HRF-SW1031-TR
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Untitled
Abstract: No abstract text available
Text: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1031
HRF-SW1031
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GMJ00004
Abstract: HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR LPCC 4x4 24
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
GMJ00004
HRF-SW1030-B
HRF-SW1030-E
HRF-SW1030-TR
LPCC 4x4 24
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4x4 ecu
Abstract: LPCC 4x4 24 rf attenuator 0.5-1.5 ghz conventional cmos GMJ00004 HRF-SW1030 HRF-SW1030-B HRF-SW1030-E HRF-SW1030-TR Attenuator chip
Text: HRF-SW1030 Preliminary SP6T Absorptive RF Switch Features x x x x x x x x High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.8 dB @ 1 GHz DC To 2.5 GHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O
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HRF-SW1030
HRF-SW1030
4x4 ecu
LPCC 4x4 24
rf attenuator 0.5-1.5 ghz
conventional cmos
GMJ00004
HRF-SW1030-B
HRF-SW1030-E
HRF-SW1030-TR
Attenuator chip
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PRFS-P2010-005
Abstract: PRFS-P2010-006 PRFS-P2010-007 PRFS-P2010-008 PRFS-P2010-009 PRFS-P2010-EVL RFSP2010
Text: Preliminary RFSP2010 2.4–2.5 GHz Power Amplifier Product Description Applications The RFSP2010 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 2.4-2.5 GHz frequency band. With a P1dB of 25 dBm, the device is ideal
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RFSP2010
RFSP2010
11g-based
11b/g
PRFS-P2010-005
PRFS-P2010-006
PRFS-P2010-007
PRFS-P2010-008
PRFS-P2010-009
PRFS-P2010-EVL
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Untitled
Abstract: No abstract text available
Text: Preliminary RFSP2010 2.4–2.5 GHz Power Amplifier Product Description Applications The RFSP2010 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 2.4-2.5 GHz frequency band. With a P1dB of 25 dBm, the device is ideal
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RFSP2010
11b/g
RFSP2010
11g-based
24-pin
DRFS-P2010-DSH
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ofdm signal
Abstract: RFSP5010
Text: Advanced RFSP5010 4.9-5.9 GHz U-NII Power Amplifier Product Description The RFSP5010 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 4.9-5.9 GHz frequency band. With a P1dB of +23 dBm, the device is ideal for wireless LAN
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RFSP5010
RFSP5010
24-pin
DRFS-P5010-DSH
ofdm signal
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VPC3 C
Abstract: No abstract text available
Text: Preliminary RFSP5022 5.15-5.85 GHz U-NII Power Amplifier Product Description The RFSP5022 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN
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RFSP5022
RFSP5022
24-pin
DRFS-P5022-DSH
VPC3 C
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p2020
Abstract: No abstract text available
Text: Preliminary RFSP2020 2.4–2.5 GHz Power Amplifier Product Description Applications The RFSP2020 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 2.4-2.5 GHz frequency band. With a P1dB of 25 dBm, the device is ideal
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RFSP2020
RFSP2020
11g-based
p2020
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RFSP5910
Abstract: 2.4 ghZ rf transistor "network interface cards"
Text: RFSP5910 2.4 & 5 GHz Single-Chip Wireless LAN Power Amplifier PRODUCT DESCRIPTION The RFSP5910 is the industry’s first dual-band power amplifier IC designed for use in wireless local area network WLAN systems at 2.4 and 5 GHz. The single-chip IC is targeted for network interface cards (NIC) that can address both 802.11a
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RFSP5910
RFSP5910
2.4 ghZ rf transistor
"network interface cards"
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ISDB-t modulator
Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)
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11a/b/g
AV00-0116EN
AV00-0141EN
ISDB-t modulator
ku-band pll lnb
HP 5082-3081
MMIC SOT 363
power fet 70 mil micro-X Package
VCO 9GHZ 10GHZ
MGA-30116
mga-62563
mga 51563
MGA-30316
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vpc3 c
Abstract: PRFS-P5022-007 RFSP5022 ofdm signal
Text: Preliminary RFSP5022 5.15-5.85 GHz U-NII Power Amplifier Product Description The RFSP5022 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN
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RFSP5022
RFSP5022
vpc3 c
PRFS-P5022-007
ofdm signal
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