Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LPDDR2 SDRAM ELPIDA Search Results

    LPDDR2 SDRAM ELPIDA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSPT857CNLG Renesas Electronics Corporation 2.5V - 2.6V PLL Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DPAG Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877DBVG Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPT857DBVG8 Renesas Electronics Corporation 2.5V-2.6V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation
    CSPU877ANLG8 Renesas Electronics Corporation 1.8V Phase Locked Loop Differential 1:10 SDRAM Clock Driver Visit Renesas Electronics Corporation

    LPDDR2 SDRAM ELPIDA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hynix lpddr2

    Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		PDF 512Mb NT6TL16M32AQ/ NT6TL32M16AQ hynix lpddr2 Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2

    NT6TL32M

    Abstract: No abstract text available
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		PDF 512Mb NT6TL16M32AQ/ NT6TL32M16AQ NT6TL32M

    hynix lpddr2

    Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
    Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


    Original     		PDF NT6TL64M32AQ -64Meg 64M32 -168-ball hynix lpddr2 ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory

    NT6TL128M32AQ-G1

    Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL128M32AQ-G1 NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2

    NT6TL256T32AQ

    Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL256T32AQ hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory

    ELPIDA mobile dram LPDDR2

    Abstract: Elpida LPDDR2 Memory LPDDR2 PoP LPDDR2 1Gb Memory ELPIDA mobile DDR DDR1 Ram elpida lpddr2 LPDDR2 SDRAM 1Gb lpddr2 LPDDR2 SDRAM memory
    Text: エルピーダメモリのモバイルテクノロジ 携帯電話の多機能化が進むとともに｢高速｣｢大容量｣ ｢低電圧｣｢低消費電力｣など、DRAMへの要求も高まっ ています｡ モバイル機器向け 新機能


    Original     		PDF 512Mb/ 256Mb/128Mb/64Mb 533Mbps 2V512MDDR2 RAM533Mbps 70nm1 DDR2533Mbps J0566E80 512Mb] ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory LPDDR2 PoP LPDDR2 1Gb Memory ELPIDA mobile DDR DDR1 Ram elpida lpddr2 LPDDR2 SDRAM 1Gb lpddr2 LPDDR2 SDRAM memory

    Elpida LPDDR2 Memory

    Abstract: lpddr2 datasheet elpida lpddr2 lpddr2 ELPIDA mobile dram LPDDR2 ddr2 ram Jedec lpddr2 lpddr2 mcp ELPIDA mobile DDR LPDDR2 1Gb Memory
    Text: Elpida Memory's Mobile Technology As cellular phones now offer an increasing number of functions, demands for high-speed, high-density, low-power DRAM are also increasing. New functions for mobile devices Using leading-edge process technology, sophisticated


    Original     		PDF E0566E80 Elpida LPDDR2 Memory lpddr2 datasheet elpida lpddr2 lpddr2 ELPIDA mobile dram LPDDR2 ddr2 ram Jedec lpddr2 lpddr2 mcp ELPIDA mobile DDR LPDDR2 1Gb Memory

    OMAP4430

    Abstract: ELPIDA mobile dram LPDDR2 OMAP4 LPDDR2 SDRAM memory Texas Instruments Pandaboard Elpida LPDDR2 Memory lpddr2 pcb design EDB8064B1PB-8D-F Micron LPDDR2 lpddr2* schematic
    Text: OMAPTM 4 PandaBoard System Reference Manual Revision 0.6 November 29, 2010 DOC-21010 OMAPTM 4 PandaBoard System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF DOC-21010 595-PANDABOARD UEVM4430G-01-00-00 OMAP4430 ELPIDA mobile dram LPDDR2 OMAP4 LPDDR2 SDRAM memory Texas Instruments Pandaboard Elpida LPDDR2 Memory lpddr2 pcb design EDB8064B1PB-8D-F Micron LPDDR2 lpddr2* schematic

    All Type Of IC Pin Diagram Manual

    Abstract: No abstract text available
    Text: OMAPTM 4 PandaBoard System Reference Manual Revision 0.6 November 29, 2010 DOC-21010 OMAPTM 4 PandaBoard System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF DOC-21010 All Type Of IC Pin Diagram Manual

    EDB8064B1PB-8D-F

    Abstract: OMAP4430 micron lpddr2 smps repair circuit smps repair ELPIDA mobile dram LPDDR2 LPDDR2 SDRAM memory OMAP4 EDB8064 Elpida LPDDR2 Memory
    Text: OMAPTM 4 PandaBoard System Reference Manual Revision 0.6 November 29, 2010 DOC-21010 OMAPTM 4 PandaBoard System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF DOC-21010 EDB8064B1PB-8D-F OMAP4430 micron lpddr2 smps repair circuit smps repair ELPIDA mobile dram LPDDR2 LPDDR2 SDRAM memory OMAP4 EDB8064 Elpida LPDDR2 Memory

    Texas Instruments Pandaboard

    Abstract: tv smps power supply repair omap4430 OMAP4460 EDB8064B1PB-8D-F usb3320c TIWI-R2 smps repair Chip level smps repair circuit EDB8064
    Text: OMAP4460 Pandaboard ES System Reference Manual Revision 0.1 September 29, 2011 DOC-21054 OMAP4460 Pandaboard ES System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF OMAP4460 DOC-21054 595-PANDABOARD-ES UEVM4460G-02-01-00 Texas Instruments Pandaboard tv smps power supply repair omap4430 EDB8064B1PB-8D-F usb3320c TIWI-R2 smps repair Chip level smps repair circuit EDB8064

    Untitled

    Abstract: No abstract text available
    Text: OMAP4460 Pandaboard ES System Reference Manual Revision 0.1 September 29, 2011 DOC-21054 OMAP4460 Pandaboard ES System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF OMAP4460 DOC-21054

    ELPIDA mobile dram LPDDR2

    Abstract: TPS62361 OMAP4460 elpida lpddr2 tv smps power supply repair Texas Instruments Pandaboard OMAP4430 OMAP4 audio video transmitter 1.2ghz schematic 3.5mm Stereo jack pinout female
    Text: OMAP4460 Pandaboard ES System Reference Manual Revision 0.1 September 29, 2011 DOC-21054 OMAP4460 Pandaboard ES System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF OMAP4460 DOC-21054 ELPIDA mobile dram LPDDR2 TPS62361 elpida lpddr2 tv smps power supply repair Texas Instruments Pandaboard OMAP4430 OMAP4 audio video transmitter 1.2ghz schematic 3.5mm Stereo jack pinout female

    MT46H64M16LF

    Abstract: No abstract text available
    Text: Advance‡ 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features • • • • Table 2: Endur-IC technology


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82846a0b/Source: 09005aef828c2f8f MT46H64M16LF

    CK913

    Abstract: No abstract text available
    Text: Advance‡ 256Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 256Mb: MT46H16M16LF MT46H8M32LF LVCMOS-co08_ 09005aef834bf85b/Source: 09005aef833c0404 CK913

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile LPDDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 256Mb: MT46H16M16LF MT46H8M32LF 09005aef834bf85b/Source: 09005aef833c0404

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82d5d305/Source: 09005aef82d5d2e7

    MT46H64M16LF

    Abstract: No abstract text available
    Text: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options continued • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074/Source: 09005aef82cd0158 MT46H64M16LF

    MT46H16M32

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82ce3074/Source: 09005aef82ce20c9 MT46H16M32

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef8331b3e9 09005aef8331b3ce

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef82ce3074/Source: 09005aef82ce20c9

    MT46H64M16

    Abstract: MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options continued • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074/Source: 09005aef82ce20c9 MT46H64M16 MT46H64M16LF

    MT46H64M16LF

    Abstract: No abstract text available
    Text: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)


    Original     		PDF MT46H64M16LF MT46H32M32LF 09005aef82d5d305/Source: 09005aef82ce20c9 MT46H64M16LF