LSD113D Search Results

LSD113D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TN2905A Abstract: PN2907A Text: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from	OCR Scan	TN2905A PN2907A L5D1130 004DbES TN2905A	PDF
NDT452P Abstract: No abstract text available Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.	OCR Scan	NDT452P 125-c b501130 NDT452P	PDF
TF411 Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46 Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and	OCR Scan	PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 S0113D bSD113D 004Dbl7 TF411 national PN2222A IC VS 1307 I-00 MMPQ2222 NMT2222 PN2222A PZT2222A TR46	PDF
diode RN 1220 Abstract: NDT455N diode 561 Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS	OCR Scan	NDT455N OT-223 LSD113D 00401EÃ diode RN 1220 NDT455N diode 561	PDF
BD371C-10 Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6 Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o	OCR Scan	b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6	PDF
N7000 Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm Text: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been	OCR Scan	2N7000/2N7002/NDF7000A/NDS7002A 81-043-299-240B bSD1130 N7000 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm	PDF
sot23 t04 Abstract: mark t04 sot 2n5401 sot 23 Text: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.	OCR Scan	2N5401 MMBT5401 2N5401 OT-23 bS01130 00407Cn LSD113D sot23 t04 mark t04 sot 2n5401 sot 23	PDF
56 pF CH Abstract: NDS8858H cft 455 f Text: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very	OCR Scan	NDS8858H LSD113Ã 56 pF CH NDS8858H cft 455 f	PDF
NDS9410 equivalent Abstract: NDS9410 Text: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This	OCR Scan	NDS9410 LSD1130 bSD113D NDS9410 equivalent NDS9410	PDF
j310 Abstract: J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ309 MMBFJ310 Text: r D is c r e te P O W E R & S i g n a l ^ . T e c h n o lo g ie s , , S e m i c o n d u c t o r “ & J309 J310 MMBFJ309 MMBFJ310 N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and	OCR Scan	MMBFJ309 MMBFJ310 040ciS2 j310 J310 equivalent z60b J309 4dcm J309-J310 J309 application note MMBFJ310	PDF