Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N ALTERATION I S S U E I DESCRIPTION ICompany name changed RATED CAP DIMENSIONS ※ L ※T ※H ※d F VOLTAGE ECQE1A8230 B6 125VAC O . 082 1O .3 4 .6 O .6 7 .5 1 1 1 1 1 1 1 lAl040B6 O .1 5 .1 7 .7 1 1 I f 1 1 lA1240B6
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ECQE1A8230
125VAC
lAl040B6
lA1240B6
lA1540B6
lA1840B6
lA2240
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RF1K49093
Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
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RF1K49093
RF1K49093
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
AN7254
AN9321
AN9322
MS-012AA
RF1K4909396
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Untitled
Abstract: No abstract text available
Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDB070AN06A0
FDP070AN06A0
O-220AB
O-263AB
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Untitled
Abstract: No abstract text available
Text: LM49151 www.ti.com SNAS482D – MARCH 2009 – REVISED MAY 2010 LM49151 PRODUCT BRIEF Mono Class D Audio Subsystem with Earpiece Driver, Ground Referenced Headphone Amplifiers, Speaker Protection and No Clip with Clip Control Check for Samples: LM49151 FEATURES
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LM49151
SNAS482D
20-bump
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Untitled
Abstract: No abstract text available
Text: Technical Datasheet CPT15F18 Cool Power Technologies Sixteenth-Brick Isolated DC/DC Converter Features • • • • • • • • • • • • • • • • • Ultra-wide input voltage range: 9 – 36Vin Output: 3.3 V at 15 A, 50W max. ROHS Directive 2002/95/EC Compliant
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CPT15F18
36Vin
2002/95/EC
1/16th
IPC-A-610
9-Apr-14
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AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113DK8
AN9321
AN9322
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
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L100
Abstract: SR-332 YEV09T10
Text: YEV09T10 10A DC-DC POL Converter 4.5V to 13.8V Input • 0.59V to 5.1V Output Data Sheet Member of the Applications Low voltage, high density systems with Intermediate Bus Architectures IBA Point-of-load regulators for high performance DSP, FPGA, ASIC, and microprocessors
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YEV09T10
ZD-02092
18-Jun-10
L100
SR-332
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
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HUFA75631P3,
HUFA75631S3ST
O-220AB
O-263AB
HUFA75631P3
75631P
AN9321
HUFA75631P3
HUFA75631S3ST
TB334
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ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
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7n10l
Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes
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RFD7N10LE,
RFD7N10LESM
7n10l
7n10le
RFD7N10LESM
AN7254
AN7260
RFD7N10LE
RFD7N10LESM9A
TB334
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76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
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HUF76639P3,
HUF76639S3S
O-220AB
HUF76639P3
76639p
HUF76639P3
HUF76639S3S
HUF76639S3ST
TB334
92e2
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE TC75W56FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W56FU DUAL COMPARATOR TC75W56FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar
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TC75W56FU
TC75W56FU
20//A
961001EBA1
100mV
100mV
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AM79C433
Abstract: MX1L
Text: K Jiä / U ^ U S e m i c o n d u c t o r s 900-MHz ISM Band Receiver Description The receiver IC U2762B-B is specifically designed for cordless telephone applications in the 900-MHz ISM band. It is manufactured using TEMIC’s advanced UHF process. The IC consists of a 900-MHz RF amplifier and
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900-MHz
U2762B-B
U2763B-B
U2781B,
AM79C432A
AM79C433.
D-74025
27-Feb-98
AM79C433
MX1L
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d425
Abstract: No abstract text available
Text: M-985-01 Precise Call Progress and Special Infomiation Tone Detector • Precise detection of call progress tones • Linear analog input • Digital (CMOS compatible), tri-state outputs • 22-pin DIP and 20-pin SOIC • Single supply 3 to 5 volt (low power CMOS)
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M-985-01
22-pin
20-pin
22121-20th
d425
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32H6825
Abstract: l 7251 3.1 pwm 3phase power supply LT opamp
Text: SSI 32H6825 Servo and Spindle Predriver ¿ m m s y s k m s A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The Servo and Spindle Predriver SSP is designed to drive a 3-phase hall-sensorless motor and a voice coil actuator with external M O S power devices.
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32H6825
AE531Li5
32H6825
l 7251 3.1
pwm 3phase power supply
LT opamp
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MSC dz diode
Abstract: 32H6231
Text: SSI 32H6825A ¿imnsiisbns Servo and Spindle Predriver A TDK Group/Company Advance Inform ation April 1994 DESCRIPTION FEATURES Spindle driver is PWM during run and start The SSI 32H6825A Servo and Spindle Predriver SSP is designed to drive a 3-phase hall-sensorless motor
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32H6825A
32H6825A
MSC dz diode
32H6231
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ic s surround SONY
Abstract: 5.1 surround sound amplifier circuits CXA2054S
Text: SONY CXA2054S US Audio Multiplexing Decoder Description The CXA2054S is an 1C designed as a decoder for the Z e n ith T V M u lti-c h a n n e l S ys te m and a lso corresponds with l2C BUS. Functions include stereo d e m o d u la tio n , SAP S e p a ra te A u d io P ro g ra m
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CXA2054S
CXA2054S
48PIN
SDIP-48P-02
SDIP048-P-0600
ic s surround SONY
5.1 surround sound amplifier circuits
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intel embedded microcontroller handbook
Abstract: RG-11/U COM20020 COM20020D CQM20020 RG62 COM20020B
Text: COM20020D PRELIMINARY STANDARD MICROSYSTEMS CORPORATION COM20020 ULANC Revision D Universal Local Area Network Controller with 2K X 8 On-Board RAM FEATURES • • • • • • • • • • • New Features for Rev. D • Data Rates up to 5 Mbps Programmable Reconfiguration Times
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COM20020D
COM20020
CQM20020D
intel embedded microcontroller handbook
RG-11/U
COM20020D
CQM20020
RG62
COM20020B
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intel embedded microcontroller handbook
Abstract: 75176B COM20020 RG62
Text: COM20020 Rev. D SltlgC ADVANCE INFORMATION STANDARD MICROSYSTEMS CORPORATION COM20020 ULANC Revision D Universal Local Area Network Controller with 2K X 8 On-Board RAM FEATURES • • • • • • • • • • • New Features for Rev. D • Data Rates up to 5 Mbps
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COM20020
intel embedded microcontroller handbook
75176B
RG62
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Untitled
Abstract: No abstract text available
Text: LM 49150 LM49150 Mono Class D A udio Subsystem with Earpiece Driver and StereoG round Referenced Headphone Am plifiers Texa s In s t r u m e n t s Literature Number: SN AS439B t í t i o n a LM49150 l Sem iconductor M arch 4, 2009 B O O m r Audio Power Am plifier Series
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LM49150
AS439B
LM49150
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SG3526AN
Abstract: SG1526AJ SG3526A 1526a SG2526A SG3526 SG1526 SG1526A SG2526AJ SG3526AJ
Text: „ „„„ SlLlCOn GßnßPSL ADVANCED DATA SG1526A/SG2528A/SG3526A D. LIN EAR IN T E G R A , I D C .R C U .T S REGULATING PULSE W ID T H M O D U L A T O R DESCRIPTION FEATURES The SG1526A high performance pulse width modulator PWM cir cuit is a direct replacement for the SG1526 in all applications and
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SG1526A/SG2526A/SG3526A
SG1526A
SG1526
SG3526AN
SG1526AJ
SG3526A
1526a
SG2526A
SG3526
SG2526AJ
SG3526AJ
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IRL2203NS
Abstract: 30BQ015 C17-C19 SC1154 SC1154CSW
Text: SEMTECH A/'sVision PROGRAMMABLE SYNCHRONOUS DC/DC HYSTERETIC CONTROLLER FOR ADVANCED PROCESSORS P re lim in a ry - O cto b er 7, 1998 SC1154 T E L :8 0 5 -4 9 8 -2 1 11 FA X :805-498-3804 W E B :http://w w w .sem tech.com D E S C R IP TIO N FE A T U R E S
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SC1154
SC1154
SO-28
IRL2203NS
30BQ015
C17-C19
SC1154CSW
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