LTE filter
Abstract: LTE 6.5 mb lte rf filter 5,5MB if lte 65MB
Text: EURO QUARTZ LTE CERAMIC FILTER •High selectivity type ceramic filters •Pass bandwidths from 30kHz to 4MHz •Easily mounted to PCB •Miniature size TV SIF Stage SPECIFICATION LTE 4.5MB Frequency v. Attenuation Characteristics 7.5±2 3.0±1 9.0±2 0.3±0.1
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30kHz
10MHz)
LTE filter
LTE 6.5 mb
lte rf filter
5,5MB
if lte
65MB
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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aba3116
Abstract: AIT1032 AWL9565 AWB7221 alt6701 AWL9555 ARA2250 ALT6712 AWT6388 ACD2206
Text: we’re right beside you Helping design engineers achieve their goals faster and easier. The ANADIGICS Advantage As the telecommunications industry powers into fourth-generation technologies, consumers expect even more from their wireless and cable products. They expect instantaneous
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to-65
AIT1032
AIT1062*
ANAD2010
aba3116
AIT1032
AWL9565
AWB7221
alt6701
AWL9555
ARA2250
ALT6712
AWT6388
ACD2206
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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Aruba AP-155
Abstract: No abstract text available
Text: data sheet Aruba 110 SERIES ACCESS POINTS Optimize client performance in high-density Wi-Fi environments Multifunctional and affordable 110 series wireless access points APs maximize mobile device performance in high-density Wi-Fi environments while minimizing interference from
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AP-115
AP110Series
Aruba AP-155
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ap 4604
Abstract: lcd 5421 RD15N rd13n STM-16 STM-64 STS-192 STS-48 TSOT0410G TSOT0410G1
Text: Advance Data Sheet June 2001 TSOT0410G SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated
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TSOT0410G
STS-192
D4--D12)
DS99-270SONT
ap 4604
lcd 5421
RD15N
rd13n
STM-16
STM-64
STS-48
TSOT0410G1
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NDF 4003
Abstract: 5N 3011 0x830B
Text: Data Sheet May 2004 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features ! Extracts and outputs, on a serial link, all transport overhead bytes in the receive data and inserts any, or all, transport overhead bytes in the transmit data using a corresponding serial input.
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TSOT0410G4
STS-192
D4--D12)
DS02-252SONT-2
DS02-252SONT-1)
NDF 4003
5N 3011
0x830B
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NDF 4003
Abstract: k312 451 lcd 5421 rd2n ap 4604 rd13n STM-16 STM-64 STS-192 STS-48
Text: Data Sheet May 2003 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features • General ■ ■ ■ ■ ■ Section overhead RSOH and line overhead (MSOH) termination, and path overhead monitoring for one SONET STS-192 (SDH STM-64) or four STS-48 (STM-16) signals.
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TSOT0410G4
STS-192
STS-192
STM-64)
STS-48
STM-16)
STS-192c.
600-pin
DS02-252SONT-1
DS02-252SONT)
NDF 4003
k312 451
lcd 5421
rd2n
ap 4604
rd13n
STM-16
STM-64
STS-48
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Untitled
Abstract: No abstract text available
Text: Data Sheet July 2001 TSOT0410G2 SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated
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TSOT0410G2
STS-192
DS01-201SONT
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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S5 100 B112 MT RELAY
Abstract: konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific
Text: Test & Measurement Catalog 2015 Chapter Contents Page Company profile ❙❙ Our business fields and products 2 1 Aerospace and defense test solutions ❙❙ Radar test systems ❙❙ ILS test system 6 2 Wireless communications testers and systems ❙❙ Wireless device testers
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ZV-Z170/-Z135/-Z129
ZN-Z15x
S5 100 B112 MT RELAY
konica IR sensor
DVB-T Schematic set top box
MIL-STD-291C
Digital Panel Meter PM 428
S5 100 B112 RELAY
DVB-C receiver schematic diagram
service manual tv seg pacific
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p20 10k wm 110
Abstract: draloric Potentiometer potentiometer vishay draloric p-40 P10 Draloric
Text: bOE 0 • ^ O O l ^ b □□□0D3T 3 m Zementierter Drahtdrehwiderstand Potentiometre bobine cimente Cemented wirewound potentiometer 180 W be! ^ at Fertlgungsberelch Plage des valeurs Resistance range Belastbarkeit 40°C P 150 VISHAY/DRALORIC DIN 41 476
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P1-P4-P10-P20
P4-P10-P20-P40
p20 10k wm 110
draloric Potentiometer
potentiometer vishay draloric p-40
P10 Draloric
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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bbS3S31
DD30Mfl0
BUK437-400B
gat20
bb53T31
DQ30Mfl3
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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NSN LTE
Abstract: No abstract text available
Text: Attenuators/Sw itches Coaxial FREQUENCY MHz IN MODEL NO. Mid-Band Total m . Range Typ. Max. Typ. Max. M no damage 65 65 50 50 DC-0.05 DC-0.05 3.5 1.4 4 2 3.5 1.6 4.7 2.5 15 1-200 DC-0.05 DC-0.05 3.5 1.4 4 2 3.5 4.7 1.6 2.5 20 15 30 30 65 65 50 50 100-2000
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ZFAS-2000*
1-200ecifications
NSN LTE
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THERMISTORS nsp 037
Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.
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200X300X360m
THERMISTORS nsp 037
Thyristor TAG 9118
ICA 0726 0148 Transformer
a1273 y k transistor
AM97C11CN
transistor SK A1104
PM7A2Q
B8708
bzy79
yh 5032
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4523DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
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BU4523DW
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Transistor AC 188
Abstract: BUK437-600B
Text: N AMER PHI LIP S/DISCRETE b=îE D bbS3T31 □□3D4TD b55 WËAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance
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bbS3T31
BUK437-600B
Transistor AC 188
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BUK437-600B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 □□3D4TD b55 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT93 SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state
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bbS3T31
BUK437-600B
BUK437-600B
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Untitled
Abstract: No abstract text available
Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are
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BFQ135
OT172A1
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Y423
Abstract: 81256
Text: FU J I T S ^ M I C R O E lT c T r ' o N I C S 7 fi D Ë J 37 M T 7 t.S 0005031 3 M O S M e m o rie s • M B 8 1 2 5 6 - 1 2 - W , y^.^3 .^- F U J IT S U M B 8 1 2 5 6 - 1 5 - W NMOS 262,144-Bit Dynamic Random Access Memory D e s c rip tio n The Fujitsu MB81256-W is a fully decoded, dynamic NMOS ran
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144-Bit
MB81256-W
512-bits
MBR1256-W
MB81256-12-W
MB81256-1S-W
Y423
81256
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