Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LX5512B Search Results

    LX5512B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LX5512B Microsemi Original PDF
    LX5512BLQ Microsemi Wireless LAN Power Amplifier; Package: MLPQ16_3x3; Original PDF
    LX5512BLQ Microsemi InGaP HBT 2.4-2.5 GHz power amplifier. Original PDF
    LX5512BLQ Microsemi Amplifier, InGaP HBT 2.4-2.5GHz Power Amplifier Original PDF
    LX5512BLQTR Microsemi InGaP HBT 2.4-2.5 GHz power amplifier. Original PDF
    LX5512BLQ-TR Microsemi Amplifier, InGaP HBT 2.4-2.5GHz Power Amplifier, Tape and Reel Original PDF

    LX5512B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LX5512B

    Abstract: LX5512BLQ LX5512BLQ-TR VB12
    Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package


    Original     		LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz LX5512BLQ LX5512BLQ-TR VB12 PDF

    LX5512B

    Abstract: LX5512BLQ LX5512BLQ-TR VB12
    Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package


    Original     		LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz LX5512BLQ LX5512BLQ-TR VB12 PDF

    LX5512B

    Abstract: LX5512BLQ LX5512BLQTR VB12 64QAM bipolar transistor 2.45 ghz s-parameter
    Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package


    Original     		LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz LX5512BLQ LX5512BLQTR VB12 64QAM bipolar transistor 2.45 ghz s-parameter PDF

    Untitled

    Abstract: No abstract text available
    Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package


    Original     		LX5512B 19dBm 64QAM, 54Mbps) 140mA LX5512B 16pin 11b/g 45GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: LX5512B TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3%, and consumes 140mA total DC current. The LX5512B is available in a 16pin 3mmx3mm micro-lead package


    Original     		LX5512B 45GHz 19dBm 140mA 64QAM/ 54Mbps LX5512B PDF