Untitled
Abstract: No abstract text available
Text: SW-338 GaAs SPDT Terminated Switch DC - 2.5 GHz Rev. V7 Functional Schematic Features • • • • • • • M/A-COM Products Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed
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SW-338
SW-338
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LT805
Abstract: ic 339 LT8050
Text: M/A-COM/ MICRO EL EC TR ON IC S SbM51fl3 DOÜOblD Ô25 fc.'ìE 3 IMACO 4 0 IC Ô M GaAs SPDT Terminated Switch DC-2.5 GHz Features SW-338, SW-339 SO-8 • Very Low Power Consumption: 75 |iW • Low Insertion Loss: 0.5 dB • High Isolation: 33 dB up to 2 GHz SW-338)
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SbM51fl3
SW-338)
SW-339)
SW-338,
SW-339
SW-338
LT805
ic 339
LT8050
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Untitled
Abstract: No abstract text available
Text: 10 -Hi] B ( 1.75) n n n n n n n n n n H n n jm m ^{\ R4 =9 . ro — f- T *I -n jL n jim m m w im w L fU L n ji(5.4) SECT F IT T IN G NAI Z-Z 25.5 23 .6 27. 51338-1274 5 338- 209 20 21.5 19.6 23.1 51338-1674 51338-1009 100 19.5 17.6 21.1 51 338-0974 51 33 8- 0 99 9
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SD-51338-004
EN-02JA
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PDF
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m 338 h
Abstract: No abstract text available
Text: M an A M P co m pa n y GaAs SPDT Terminated Switch DC-2.5 GHz SW-338, SW-339 SO-8 Features • V ery I.o w P o w e r C o n s u m p tio n : 75 |i\X • I.o w I n s e r tio n Loss: 0 .5 dl! • H ig h Iso la tio n : 3 3 dB u p to 2 G H z SW -338 28 cJB up to I i ¿Hz (SW-339)
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SW-338,
SW-339
SW-339)
packagSW-338
m 338 h
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Transistor 337
Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier
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Untitled
Abstract: No abstract text available
Text: AMPMODU .100 [2.54] Centerline Board-to-Board Headers Catalog 1307612 Revised 7-01 S tan d ard H eaders— U n shrouded, T rip le -R o w , .100 [2.54] C en terlin e .025 [0.64] Square Straight Post H m H H .338 [ 8 . 59 ] mm mm // m m is h m mm Material and Finish:
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2S0880
Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Text: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U
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2SC790
2SD795
2SD1135
2SD389
2SD2023
2SD313
2SC79Ã
2SD390
2S0880
2SD427
SD 338
2Sd428
2sd880
2SD2023
2SC2320
2SC1815
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PDF
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D0205AB
Abstract: 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174
Text: tary Silicon Power Rectifier a N3164 N3174 Dim. Inches M inim um A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - UNF 1.250 1.375 5.90
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D0205AB
1N3164
1N3164R
1N3168
1N3168R
1N3170
1N3170R
1N3172
1N3172R
1N3174
D0205AB
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PDF
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LN2054
Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044
Text: Silicon Power Rectifier N4044—1N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900
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D0205AB
1N4044
1N1660
1N1670
1N2054
1N3260
1N4045
1N1661
1N1671
1N2055
LN2054
1N3260
1N3261
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PDF
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UN412Y
Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D
Text: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, *EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc* (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1
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UN412Y
UN421D
UN421E
UM21F
UN421L
UN512)
UN612X
UN612Y
47K/10K
UN621D
UN511D
UN511E
UN511F
UN511L
UN511M
UN521D
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PDF
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Untitled
Abstract: No abstract text available
Text: Military Silicon Power Rectifier 1N3164 - 1N3174 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - Maximum Minimum UNF
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1N3164
1N3174
D0205AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage
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BC327/328
337/BC
BC327
BC328
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BD 338 N
Abstract: TRANSISTOR BD 338 BD336
Text: _ J BD332; 334 BD336; 338 V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered
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BD332;
BD336;
OT-82
BD331,
BD333,
BD337.
BD332
0Q34370
BD 338 N
TRANSISTOR BD 338
BD336
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IMI7340
Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
Text: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections
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IMI7000
IMI7340
IMI7160
IMI7080
IMI7220
G4060
IMI712K
G4000
IMI7490
IMI7620
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PDF
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ic 723 cn
Abstract: ZIP9 BA336 BA338 BA338L song ic
Text: Audio ICs Mute detector 1C BA336/BA338/BA338L T h e BA336, B A 338 and B A 338L are m onolithic ICs d esig ned for m ute d etectio n and tap e end d etectio n . W h en a duration of silence 52dB m or less exceeds the tim e constant set with an external CR circuit, a sorig g ap is identi
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BA336/BA338/BA338L
BA336,
BA338
BA338L
52dBm
BA336
BA338/
BA338/BA338L
ic 723 cn
ZIP9
song ic
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PDF
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2SC1815
Abstract: 25c1815 2SC945 2SC1740 2SC945 Y 2SC763 2SC1275 2sc1949 2SC829 2sc1741
Text: - m £ 2SC 328 2SC 329 * 2SC 330 * 2SC 331 * 2SC 332 * 2SC 333 * 2SC 334 * 2SC 335 * 2SC 336 * 2SC 337 ^ * 2SC 338 * 2SC 339 * 2SC 340 ^ * 2SC 342 * 2SC 343 * 2SC 350 •>' * 2SC 351 * 2SC 354 Manuf. # 3 SANYO Ä 3Ë TOSHIBA 2SC3S7A G TM s a NEC s i HITACHI
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2SC748
2SC763
2SC2926
2SC1275
2SC1949
2SC2960
2SC752
2SC1815
25c1815
2SC945
2SC1740
2SC945 Y
2SC1275
2sc1949
2SC829
2sc1741
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PDF
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BC338C
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage
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BC337/338
BC337/BC
BC337
BC338
BC338C
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PDF
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jd 1801
Abstract: HT 1200-4 enb221 ENB221D-07A
Text: - 338 — '<> T . ? * ± * - 346- 3l"Qd I l-Q d - L K - Ol-Qd 6-Qd s tr E lí8 - ^ > <miu CD : T r > * |a ig ^ > CO •C* - 351 - - 352 - < '■ •J~ ì3r 1*1 f ö :m m > - HT-1 HT-2 77)4.5 30.2*«' 1 189*» “ ) ■<rJ21.5MAX (0 846) '4 -Æ « - - i— t - - i-
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jD-07A
jD-07B
tS94V-0fflÃ
35MIN
jD-07A
EXB850D-07A
EXB121D-07A
H-101
jd 1801
HT 1200-4
enb221
ENB221D-07A
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PDF
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1N3162
Abstract: D0205AB n316 1N3161 1N3163 1N3164 1N3165 1N3166 1N3167 1N3168
Text: —I MI— Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1/2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Maximum Minimum 3 /4 -1 6 1.218 1.350 5.30 .793 .300 - .660 .338 .665 .125 - UNF
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D0205AB
1N3161
1N3162
1N3163
1N3164
1N3165
1N3166
1N3167
1N3168
1N3169
D0205AB
n316
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PDF
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Untitled
Abstract: No abstract text available
Text: V IT R O H M series POWER RESISTORS_ KWP - Types 330-3/5, 332-3/5, 333-3/5, 335-3/5, 336-3/5, 337-3/5, 338-3/5 CO sg < O t < 5 o. 2 < Ho Power Wirewound Resistors radial, fibre glass core, ceramic case Dimensions: 33x-3 CO Temperature rise: hot-spot
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33x-3
33x-5
IEC-68-2-20T
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PDF
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84fl
Abstract: MAX343 I05n
Text: - 338- M A X343 High-Voltage C M O S/D M O S Analog Switches mm m O N itf 'f t u rn V +/V " R on A T Vs = V + R on A T V S = V +2 0 V /- 2 0 V 127a + 3 0 W - 3 QV iosa ♦ 4 0 V / - 4 ÛV 92n 84n 127H 1050 39H 3 6 ÌÌ 320 3o n 39fl 36 Í1 +50V /- 50V ♦ 4 0 V /G N D
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MAX343
0V/-20V
0V/-30V
0V/-40V
0V/-50V
60WGND
MAX343
84fl
I05n
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PDF
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Untitled
Abstract: No abstract text available
Text: B F M I h HI ^ r? ^ n -n c iD L s U V /U U L s U = ^ L r iJ February 10, 1998 5 AMP POSITIVE ADJUSTABLE LM 338 LM338P voltage regulators T E L :8 05 -4 98 -21 11 FAX :805-498-3804 W E B :http://www.sem tech.conn ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL
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LM338P
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PDF
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2SD636
Abstract: 2SD636 Matsushita RT1N241C DTC124EK 2SC3281 upa74ha 3394 2SC3372 NEC 3377 RT1N441C
Text: - sa « Type No. tt 2SC 3365 ^'' 2SC 3366 2SC 3367 ISO 3368 2SC 3369 2SC 3370 2S0 337 3375 3376 3377 3378 3379 2SC 2SC 2SC 2SC 3380 338] 3382 3383 m h SANYO S ÎL 2SC3277 B S ÎL 2SD1236 2SD1236 ÍL fâ T T ta 2SC3257 2SC3137 B ÎL 3K S X «£ □— A
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2SC3277
2SC3306
2SC2740
2SC4654
2SD1236
2SC3257
2SC2516
2SD1274
2SD1896
2SD636
2SD636 Matsushita
RT1N241C
DTC124EK
2SC3281
upa74ha
3394
2SC3372
NEC 3377
RT1N441C
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PDF
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Untitled
Abstract: No abstract text available
Text: MN1631 M N 1 6 3 1 £ • 7 # - f $ H 1St / S u b Channel Adaptor (S in g le V oltage Supply' ( # — n ^ /D e sc rip tio n M N 1631 ¡ ± , -f ^ U n it ^ mm 16 fcf -y h -? i •7 / 7 7 1 2t 9 v a y e j. - ? ■ ^ x f i n t r T\ =340 339 338 3d 4t 5C
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MN1631
N1631
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