MA4X724
Abstract: M1T diode
Text: Schottky Barrier Diodes SBD MA4X724 Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 0.4 − 0.05 1.45 1.5 − 0.05 1 0.5 0.95 4 0.95 2
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MA4X724
MA4X724
M1T diode
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M1T diode
Abstract: m1t marking marking m1t
Text: MA111 Schottky Barrier Diodes SBD MA724 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification +0.2 2.8 –0.3 +0.1 0.4 –0.05 1.45 1 0.5 0.95 2 3 0.6 –0 0.2 200mA rectification possible +0.1 +0.1
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MA111
MA724
MA721
200mA
200mA
100mA
M1T diode
m1t marking
marking m1t
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m1t marking
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For super high speed switching For small current rectification 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10
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MA4X724
MA724)
MA3X721
MA721)
m1t marking
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Matsushita M1T
Abstract: MA3X721 MA4X724 MA721 MA724
Text: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current Single VR 30 V VRRM 30 V IFM 300 mA Forward current (Average)
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MA4X724
MA724)
SC-61
MA3X721
Matsushita M1T
MA3X721
MA4X724
MA721
MA724
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Matsua M1T
Abstract: M1T diode
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current
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2002/95/EC)
MA4X724
MA724)
MA3X721
MA721)
Matsua M1T
M1T diode
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MA4X724
Abstract: MA724 M1T diode
Text: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05
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MA4X724
MA724)
MA3X721s
MA4X724
MA724
M1T diode
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Matsua M1T
Abstract: m1t marking
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 2 Peak forward current
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2002/95/EC)
MA4X724
MA724)
MA3X721
MA721)
Matsua M1T
m1t marking
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PDF
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MA3X721
Abstract: MA4X724 MA721 MA724 MA102TA
Text: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For super high speed switching For small current rectification 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 5° 0.5R 2.8+0.2 –0.3 3 1 (0.65) (0.2) 0.60+0.10
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MA4X724
MA724)
MA3X721
MA721)
MA3X721
MA4X724
MA721
MA724
MA102TA
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Matsua M1T
Abstract: Matsushita M1T MA3X721 MA4X724 MA721 MA724 M1T diode
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 M
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2002/95/EC)
MA4X724
MA724)
Matsua M1T
Matsushita M1T
MA3X721
MA4X724
MA721
MA724
M1T diode
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 • Two isolated elements are contained in one package, allowing
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2002/95/EC)
MA4X724
MA724)
MA3X721
MA721)
SC-61
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MA3X721
Abstract: MA4X7240G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7240G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching For small current rectification • Features ■ Package
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2002/95/EC)
MA4X7240G
MA3X721
MA4X7240G
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MA3X721
Abstract: MA4X7240G M1T diode
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7240G Silicon epitaxial planar type For super high speed switching For small current rectification • Features ■ Package • Two isolated elements are contained in one package, allowing
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2002/95/EC)
MA4X7240G
MA3X721
MA4X7240G
M1T diode
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A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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ups 500va 220v 50hz circuit diagram
Abstract: 230v ac to 12v dc without transformer circuit 220V AC 12V DC regulated switching schematic diagram 48v dc motor speed controller TRANSISTOR SMD 58W dc 220v motor speed control circuit with scr Fuse RH A4 2A 250V OMRON C200H relay 5 pin 12v 6a ujt 2646
Text: Automation Controls Group Catalog Control Panel Relays Safety Relays Interface Terminal Automation Controls Group Catalog 2010-2011 panasonic-electric-works.net/ac Control Panel Relays¥Safety Relays¥Interface Terminal 2010-2011 Please contact .
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ASCT1B382E
201004-3YT
ups 500va 220v 50hz circuit diagram
230v ac to 12v dc without transformer circuit
220V AC 12V DC regulated switching
schematic diagram 48v dc motor speed controller
TRANSISTOR SMD 58W
dc 220v motor speed control circuit with scr
Fuse RH A4 2A 250V
OMRON C200H
relay 5 pin 12v 6a
ujt 2646
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Z80000
Abstract: No abstract text available
Text: p ii il P ro d u c t S p e c ific a tio n October 1988 Z80,000 CPU FEATURES • Full 32-bit architecture and implementation ■ 4G billion bytes of directly addressable memory in each of four address spaces ■ Linear or segmented address space ■ Virtual memory management integrated with CPU
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32-bit
Z80000
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ay 9j
Abstract: MARKING CODE yac OP44 E3-E12 ITT doeh
Text: M IL SPECS IC 1 □00D15S O O ab?11!! b TDfCH-'PgUNDT MIL-M-38510/122A 15 September 1989 w n r m r n r e -MIL-M-38510/122 9 A p r i l 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, HIGH SLEW RATE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This s p e c i f i c a t i o n 1s approved f o r use by a l l Depart
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MIL-M-38510/122A
MIL-M-38510/122
a8510.
MIL-M-38510.
M111tary-dev1ce
HIL-H-38510/122A
ay 9j
MARKING CODE yac
OP44
E3-E12
ITT doeh
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