Untitled
Abstract: No abstract text available
Text: M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA SUPPLY VOLTAGE – 1.8V to 3.6V for READ OPERATION – 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME
|
Original
|
M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
|
PDF
|
M29R800
Abstract: No abstract text available
Text: M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING SUPPLY VOLTAGE – 1.8V to 3.6V for READ OPERATION – 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical
|
Original
|
M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
TSOP48
200ns
M29R800
|
PDF
|
FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
|
Original
|
M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
|
PDF
|
AN1118
Abstract: AN931
Text: AN1118 APPLICATION NOTE FLASH+: The End of the Emulation Compromise Designers are constantly under pressure to reduce the size of printed circuit boards, and are frequently faced with the EEPROM emulation dilemma: in a system that requires both Flash and EEPROM memory
|
Original
|
AN1118
AN1118
AN931
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON . llIlMJilLIlMWDÊi M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA SUPPLY VOLTAGE - 1.8V to 3.6V for READ OPERATION - 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns
|
OCR Scan
|
M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
M29R800T,
|
PDF
|
Z12-M
Abstract: No abstract text available
Text: F Z J SCS-THOM SON M29R800T * 1 § , M M lim eulM niB i M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING SUPPLY VOLTAGE - 1,8V to 3.6V for READ OPERATION - 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns
|
OCR Scan
|
M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
TSOP48
M29R800T,
200ns
Z12-M
|
PDF
|
flash memory
Abstract: No abstract text available
Text: GENERAL INDEX FLASH MEMORY, SINGLE VOLTAGE 5V M29F100T. M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O R Y . M29F200T, M29F200B 2 Mb (x8/x16. Block Erase) SINGLE SUPPLY FLASH M EM O R Y. M29F040 4 Mb (512K x 8, Block Erase) SINGLE SUPPLY FLASH M E M O R Y .
|
OCR Scan
|
M29F100T.
M29F100B
x8/x16,
M29F200T,
M29F200B
x8/x16.
M29F040
M29F400T,
M29F400B
flash memory
|
PDF
|