Untitled
Abstract: No abstract text available
Text: M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA SUPPLY VOLTAGE – 1.8V to 3.6V for READ OPERATION – 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME
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Original
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M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
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PDF
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M29R800
Abstract: No abstract text available
Text: M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING SUPPLY VOLTAGE – 1.8V to 3.6V for READ OPERATION – 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical
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Original
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M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
TSOP48
200ns
M29R800
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON . llIlMJilLIlMWDÊi M29R800T M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA SUPPLY VOLTAGE - 1.8V to 3.6V for READ OPERATION - 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns
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OCR Scan
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M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
M29R800T,
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PDF
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Z12-M
Abstract: No abstract text available
Text: F Z J SCS-THOM SON M29R800T * 1 § , M M lim eulM niB i M29R800B, M29R800D 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING SUPPLY VOLTAGE - 1,8V to 3.6V for READ OPERATION - 2.7V to 3.6V for PROGRAM and ERASE OPERATIONS FAST ACCESS TIME: 100ns
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OCR Scan
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M29R800T
M29R800B,
M29R800D
x8/x16,
100ns
TSOP48
M29R800T,
200ns
Z12-M
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PDF
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flash memory
Abstract: No abstract text available
Text: GENERAL INDEX FLASH MEMORY, SINGLE VOLTAGE 5V M29F100T. M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O R Y . M29F200T, M29F200B 2 Mb (x8/x16. Block Erase) SINGLE SUPPLY FLASH M EM O R Y. M29F040 4 Mb (512K x 8, Block Erase) SINGLE SUPPLY FLASH M E M O R Y .
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OCR Scan
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M29F100T.
M29F100B
x8/x16,
M29F200T,
M29F200B
x8/x16.
M29F040
M29F400T,
M29F400B
flash memory
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PDF
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