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    STMicroelectronics M48Z2M1V-85PL1

    IC NVSRAM 16MBIT PAR 36PLDIP
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    DigiKey M48Z2M1V-85PL1 Tube 54
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    Quest Components M48Z2M1V-85PL1 1
    • 1 $129.392
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    M48Z2M1V Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M48Z2M1V STMicroelectronics 16 MBIT (2MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1V STMicroelectronics 5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1V-701 STMicroelectronics 5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1V-85PL1 STMicroelectronics 16 MBIT (2MB x 8) ZEROPOWER SRAM Original PDF
    M48Z2M1V-85PL1 STMicroelectronics Memory, Integrated Circuits (ICs), IC NVSRAM 16MBIT 85NS 36DIP Original PDF

    M48Z2M1V Datasheets Context Search

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    a20 Schottky diode st

    Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: M48Z2M1V a20 Schottky diode st M48Z2M1Y up 5135 Zeropower

    up 5135

    Abstract: No abstract text available
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: up 5135

    a20 Schottky diode st

    Abstract: No abstract text available
    Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: PLDIP36 a20 Schottky diode st

    M48Z2M1V

    Abstract: M48Z2M1Y
    Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z2M1Y M48Z2M1V 36-pin, M48Z2M1Y: PLDIP36 M48Z2M1V: 1/17d M48Z2M1V M48Z2M1Y

    M48Z2M1V

    Abstract: M48Z2M1Y
    Text: M48Z2M1Y M48Z2M1V 5V or 3.3V, 16 Mbit 2Mb x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z2M1Y: M48Z2M1V: 36-pin, PLDIP36 M48Z2M1Y, M48Z2M1V M48Z2M1Y

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


    Original     		PDF AN1012

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    Cross Reference

    Abstract: sram cross reference M48Z512A TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1270W DS1230W
    Text: Tech Brief 39 NV SRAM Cross Reference Table www.maxim-ic.com CROSSING NV SRAMS Two companies make nonvolatile NV SRAMS that are direct or close crosses to the NV SRAMs manufactured by Dallas Semiconductor. The following table contains of list of these crosses.


    Original     		PDF DS1220AB DS1220AD DS1225AB DS1225AD DS1230AB DS1230Y DS1230W DS1245AB DS1245Y DS1245W Cross Reference sram cross reference M48Z512A TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1270W DS1230W

    SOH28

    Abstract: ic mt 1628 NVRAM STMicroelectronics date CODE so-8 soic date code stmicroelectronics Zeropower ram M48Z m48t35 STMicroelectronics PRODUCT code date m48 M48Z129V M48Z18
    Text: Non-volatile RAMs Selection guide September 2007 www.st.com/nvram ZEROPOWER NVRAMs • ■ Battery backed SRAM 16 Mbit to 16 Kbit Density 16 Mb 2 Mx8 4 Mb (512 Kx8) 1 Mb (128 Kx8) 256 Kb (32 Kx8) 64 Kb (8 Kx8) 16 Kb (2 Kx8) Part number VCC [V] M48Z2M1Y


    Original     		PDF M48Z2M1Y M48Z2M1V M48Z128Y M48Z35 M48Z18 M48Z08 M48Z58 M48Z32V M48Z512AY M48Z129V SOH28 ic mt 1628 NVRAM STMicroelectronics date CODE so-8 soic date code stmicroelectronics Zeropower ram M48Z m48t35 STMicroelectronics PRODUCT code date m48 M48Z129V M48Z18