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    M5C TRANSISTOR Search Results

    M5C TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M5C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 BIT 2 INPUT MULTIPLEXER

    Abstract: transistor m5c diode M5C CMLA01 M5C4 grid tie inverter schematic diagram OAI211 AOI21 OAI21 CU240
    Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew


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    M7A transistor

    Abstract: transistor M7A transistor m5c 10 M7C 212 s sot-23 10 M7A ADM1818-5ART-REEL KS sot 23 ADM1815-R22ART-REEL7 ADM1811
    Text: Microprocessor Reset Circuits ADM1810–ADM1813/ADM1815–ADM1818 FEATURES Reliable Low Cost Voltage Monitor with Reset Output Suitable for Monitoring 2.5 V, 3 V, 3.3 V, and 5 V Power Supply Voltages Reset Threshold Levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V,


    Original     		PDF ADM1810 ADM1813/ADM1815 ADM1818 ADM1810, ADM1812, ADM1815, ADM1817) ADM1811, ADM1813, ADM1816, M7A transistor transistor M7A transistor m5c 10 M7C 212 s sot-23 10 M7A ADM1818-5ART-REEL KS sot 23 ADM1815-R22ART-REEL7 ADM1811

    M7A transistor

    Abstract: transistor M7A transistor m5c M5C SOT transistor m6e M76 switch ADM1818-5ART-REEL ADM1817 ADM1816 ADM1818
    Text: Microprocessor Reset Circuits ADM1810-ADM1813/ADM1815-ADM1818 FEATURES Reliable low cost voltage monitor with reset output Suitable for monitoring 2.5 V, 3 V, 3.3 V, and 5 V power supply voltages Reset threshold levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V, 2.55 V,


    Original     		PDF ADM1810-ADM1813/ADM1815-ADM1818 ADM1810, ADM1812, ADM1815, ADM1817 ADM1811, ADM1813, ADM1816, ADM1818 M7A transistor transistor M7A transistor m5c M5C SOT transistor m6e M76 switch ADM1818-5ART-REEL ADM1817 ADM1816 ADM1818

    ADM1810

    Abstract: No abstract text available
    Text: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES VCC RST VCC TOLERANCE BIAS 150ms DELAY GND GENERAL DESCRIPTION ADM1811/ADM1816 5.5kΩ RST VCC TOLERANCE BIAS 150ms DELAY GND VCC The ADM181x range of voltage monitoring circuits is used in


    Original     		PDF ADM1810 ADM1813/ADM1815 ADM1818 150ms ADM1811/ADM1816 ADM181x ADM181x OT-23)

    ADM1810

    Abstract: ADM1811 ADM1812 ADM1813 ADM1815 ADM1816 ADM1817 ADM1818 transistor m5c transistor m6e
    Text: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES VCC RST VCC TOLERANCE BIAS 150ms DELAY GND GENERAL DESCRIPTION ADM1811/ADM1816 5.5kΩ RST VCC TOLERANCE BIAS 150ms DELAY GND VCC The ADM181x range of voltage monitoring circuits is used in


    Original     		PDF ADM1810 ADM1813/ADM1815 ADM1818 150ms ADM1811/ADM1816 ADM181x ADM181x OT-23) ADM1811 ADM1812 ADM1813 ADM1815 ADM1816 ADM1817 ADM1818 transistor m5c transistor m6e

    Untitled

    Abstract: No abstract text available
    Text: MMBD7000W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 100 Volts FORWARD CURRENT – 0.2 Ampere SOT-323 FEATURES • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. A B C


    Original     		PDF MMBD7000W OT-323 OT-323 J-STD-020D 2002/95/EC OT-23 OT-523

    transistor M7A

    Abstract: 10 M7C m5c transistor M7A transistor 3.GND SOT-23 ADM1812-5ART-REEL m5c diode SOT R23 M6.B SOT-23 ADM1811
    Text: Microprocessor Reset Circuits ADM1810–ADM1813/ADM1815–ADM1818 FEATURES Reliable Low Cost Voltage Monitor with Reset Output Suitable for Monitoring 2.5 V, 3 V, 3.3 V, and 5 V Power Supply Voltages Reset Threshold Levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V,


    Original     		PDF ADM1810 ADM1813/ADM1815 ADM1818 ADM1810, ADM1812, ADM1815, ADM1817) ADM1811, ADM1813, ADM1816, transistor M7A 10 M7C m5c transistor M7A transistor 3.GND SOT-23 ADM1812-5ART-REEL m5c diode SOT R23 M6.B SOT-23 ADM1811

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diode LMBD7000LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device Package LMBD7000LT1G Shipping SOT–23 3000/Tape & Reel LMBD7000LT3G SOT–23


    Original     		PDF LMBD7000LT1G LMBD7000LT3G 3000/Tape 10000/Tape

    transistor m5c

    Abstract: No abstract text available
    Text: Ordering number : ENA1083 LV5219LG Bi-CMOS IC For cell phone LED driver Overview The LV5219LG is an LED driver IC for cellular phones. It incorporates 17 LED drivers main, sub, tricolor x 2, and flash and a switching regulator circuit and supports the step-up through mode. Each LED current level can be adjusted


    Original     		PDF ENA1083 LV5219LG LV5219LG A1083-65/65 transistor m5c

    m5da

    Abstract: No abstract text available
    Text: Ordering number : ENA1083 LV5219LG Bi-CMOS IC LED driver for cell phone http://onsemi.com Overview The LV5219LG is an LED driver IC for cellular phones. It incorporates 17 LED drivers main, sub, tricolor x 2, and flash and a switching regulator circuit and supports the step-up through mode. Each LED current level can be


    Original     		PDF ENA1083 LV5219LG LV5219LG A1083-65/65 m5da

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1083 LV5219LG Bi-CMOS IC For cell phone LED driver Overview The LV5219LG is an LED driver IC for cellular phones. It incorporates 17 LED drivers main, sub, tricolor x 2, and flash and a switching regulator circuit and supports the step-up through mode. Each LED current level can be adjusted


    Original     		PDF ENA1083 LV5219LG LV5219LG A1083-65/65

    MMBD7000LT1

    Abstract: AF SOT 23
    Text: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 3 2 CATHODE 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current


    Original     		PDF MMBD7000LT1/D MMBD7000LT1 236AB) MMBD7000LT1 AF SOT 23

    transistor 33166 t

    Abstract: transistor 60318 La 7676 datasheet architecture of microprocessor 80386 tt 2222 Datasheet ARCHITECTURE OF 80286 PROCESSOR what is clock speed Architectural innovation transistor m5c H105-1
    Text: Is Megahertz Enough? An IDC White Paper Sponsored by AMD Analyst: Shane Rau INTRODUCTION: WHAT’S THE PROBLEM? PC buyers usually rely on the clock speed megahertz of a PC's microprocessor to determine their purchasing decision. Because the industry lacks a simple, universally accepted way to judge performance, users have become conditioned to substituting clock speed to


    Original     		PDF 03-002SYSTEM3531 transistor 33166 t transistor 60318 La 7676 datasheet architecture of microprocessor 80386 tt 2222 Datasheet ARCHITECTURE OF 80286 PROCESSOR what is clock speed Architectural innovation transistor m5c H105-1

    Untitled

    Abstract: No abstract text available
    Text: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES FUNCTIONAL BLOCK DIAGRAMS Reliable low cost voltage monitor with reset output Suitable for monitoring 2.5 V, 3 V, 3.3 V, and 5 V power supply voltages Reset threshold levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V, 2.55 V,


    Original     		PDF ADM1810, ADM1812, ADM1815, ADM1817 ADM1811, ADM1813, ADM1816, ADM1818

    TMS 3766

    Abstract: transistors 1UW AN1521 ao21 mx618 MX61H AOI21 H4EP012 H4EP044 H4EP171
    Text: Order this Data Sheet by H4EP/D MOTOROLA bu SEMICONDUCTOR TECHNICAL DATA H4EPlus SERIES Advanced Information H4EPlus SERIES CMOS ARRAYS The H4EPlus Series arrays offer a fully featured 3.3V, 5V and mixed voltage capable family combined with an increased core density providing over 50% more


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    M5C4

    Abstract: transistor m5c CMLA01 OAI211 OA211 A021H CMA019
    Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock


    OCR Scan     		PDF b3ti75Sl M5C4 transistor m5c CMLA01 OAI211 OA211 A021H CMA019

    transistor m5c

    Abstract: HP900 m5c transistor CMLA01 128160 MSC112 U046 motorola F00
    Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Sw itching Diode MMBD7000LT1 Motorola Preferred Device 1 o h » n ANODE i o 2 CATHODÉ CATHOOE/ANODE % MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage Vr 100 Vdc Forward Current if 200 mAdc iFM(surge)


    OCR Scan     		PDF MMBD7000LT1 OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11


    OCR Scan     		PDF MMBD7000LT1/D BD7000LT1 OT-23 O-236AB) 1-80CM41-2447

    2SC102 transistor

    Abstract: 2sc102 2N2902 TK30556 1763-0625 2SC5220 2SC519 2SC520 TK30557 TK30558
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2SC102 transistor 2sc102 2N2902 TK30556 1763-0625 2SC5220 2SC519 2SC520 TK30557 TK30558

    2SC102 transistor

    Abstract: transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2SC102 transistor transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557

    2sc102

    Abstract: 2SC102 transistor T0-63 1763-0625 2sc113 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A 2sc102 2SC102 transistor T0-63 1763-0625 2sc113 2SC519 2SC520 TK30556 TK30557 TK30558

    2SC102 transistor

    Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558

    2SC102 transistor

    Abstract: 2N2342 2sc102 TK30556 2N2902 M10A
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		PDF