TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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um61256
Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
PD4504161
um61256
um611024
SRAM 64KX8 5V
A29F002
TC51V4265
rom at29c010
WINBOND cross reference MT48LC8M16A2
ks0723
k4s561632
IDT72V245
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um61256
Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
PD4504161
um61256
hynix hy57v281620
hy57v641620 cross reference
WINBOND Serial flash cross reference
UM611024
256k x8 SRAM
28F160S3
Samsung EOL
"DDR1 SDRAM"
1MX8/512KX16
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um61256
Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
A29F002
um61256
PM25LV040
SST25LF040B
Pm25LV016
PM25LV010A
PM25LV080
SST25LF512A
HY514264
M5M418
hynix hy57v281620
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH25608TNA-85L, -10L,-12L,-15L/ MH25608TNA-85H,-10H,-12H,-15H 2 0 9 7 1 5 2 -B IT 2 6 2 1 4 4 -W ORD B Y 8 -B IT C M O S S T A T IC RAM M O D ULE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 0 8 T N A is a 2 0 9 7 1 5 2 bits CMOS static R A M
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MH25608TNA-85L,
-15L/
MH25608TNA-85H
32-pin
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Untitled
Abstract: No abstract text available
Text: blE D bEM'lflSS Q O E O b S l MITSUBISHI LSIs STI • M I T 1 MH25608TNA-85L,-10L,-12L,-15L/ MH25608TN A-85H, -10H, -12H, -15H 2 0 9 7 152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM MITSUBISHI (M E M O R Y / A S I C ) DESCRIPTION PIN CONFIGURATION (TOP VIEW)
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MH25608TNA-85L
-15L/
MH25608TN
152-BIT
262144-WORD
262144-words
32-pin
25608T
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M5M5256
Abstract: No abstract text available
Text: MITSUBISHI LSIs M H2S609SN-10 2 3 5 9 2 9 6 - B I T 2 6 2 1 4 4 -WORD BY 9 -B IT CMOS STATIC RAM DESCRIPTION The M H25609SN is a 2 3 5 6 2 9 6 -b it CMOS s ta t ic RAM PIN CONFIGURATION (TOP VIEW) m o d u le o r g a n iz e d as 2 6 2 1 4 4 - w o r d b y 9 - b its . I t co n sists o f
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H2S609SN-10
H25609SN
M5M5256
M5M5256
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Untitled
Abstract: No abstract text available
Text: • b E 4 ci ñ a S G0 1 fe>5 5 O 7 ■ MITSUBISHI LSls MH25609SN-10 . M ITSU B ISH I M EMORY/ASIC ETE D 2 3 5 9 2 9 6 -B IT (2 6 2 144-WORD BY 9-BIT)CM0S STATIC RAM T * - ‘/ k ' A ì - W DESCRIPTION The M H 25609SN is a 2 3 5 6 2 9 6 -b it C M O S static R A M
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MH25609SN-10
144-WORD
25609SN
35-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M 5 M 5 2 5 6 B P ,F P ,K P -7 0 ,-8 5 ,-1 0 ,-1 2 ,-1 5 ,- 7 0 L ,- 8 5 L 5 -1 0 L ,-1 2 L ,-1 5 L ,-7 0 L L ,-8 5 L L ,-1 0 L L ,-1 2 L L ,-1 5 L L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5256BP, FP, KP is a 262144-bit CMOS static
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262144-BIT
32768-WORD
M5M5256BP,
262144-bit
32768-words
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m5m5256bfp
Abstract: m5256b 261al M5M5256BP 5M5256BFP
Text: MITSUBISHI LS Is M 5 M 5 2 5 6 B P , F P , K P - 7 0 ,- 8 5 , - 1 0 , - 1 2 , - 1 5 ,- 7 0 L r 8 5 L , - 1 0 L , - 1 2 L , - 1 5 L ,- 7 0 L L ,- 8 5 L L , - 1 0 L L , - 1 2 L L , - 1 5 L L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5256BP, FP, KP is a
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262144-BIT
32768-WORD
M5M5256BP,
262144-bit
32768-words
28pin
m5m5256bfp
m5256b
261al
M5M5256BP
5M5256BFP
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25608
Abstract: M5M5256 MH25608TNA-10H
Text: MITSUBISHI LSIs MH25608TNA-85L,-10L,-12L,-15L/ MH25608TNA-85H,-10H,-12H,-15H 2 0 9 7 1 5 2 -B IT 2 6 2 144-WORD BY 8-BIT CM 0S STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 0 8 T N A is a 2 0 9 7 1 5 2 bits CMOS static R A M module organized as 26 2144 -w o rd s by 8-bits. It consists
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MH25608TNA-85L
MH25608TNA-85H
144-WORD
32-pin
100ns
120ns
150ns
25608
M5M5256
MH25608TNA-10H
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5m5256
Abstract: 74hc138m TL-100NS
Text: MITSUBISHI LSIs MH25609ASN-10 2359296-BIT 262144-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 0 9 A S N is a 2 3 5 9 2 9 6 - b it CMOS static RAM m odule organized as 2 6 2 1 4 4 -w o rd by 9 -b its. It consists o f eight industry standard 3 2 K x 8 static RAM s, 2 5 6 K x 1
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MH25609ASN-10
2359296-BIT
262144-WORD
5m5256
74hc138m
TL-100NS
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MN12261
Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating
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N1224
16-DIP
18-DIP
SO-18D
14-DlP
MN12261
MN1225
N12c
M5M4400
256K RAM HM62256
47464
mn4464
n1224
MN41256A
44256 ram
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IMS1630
Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68
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AM2147
AM2148/9
AM2167
AM2168
AM9126
AM99C68
AM99C88
AM99C89
AM67C4501
AM67C4502
IMS1630
HY62256
SGS-Thomson
HITACHI HM6116
DALLAS SEMICONDUCTOR Ds1235
MK4503
hm6116 cross
UPD4361
SSM7188
MK4501
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organizational structure samsung
Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116
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LH5116
Am9128
CDM6116
HM6116A
HY6116
HM6116
MS6516
SRM2016
MK6116
CXK5816
organizational structure samsung
NMS256X8
MICRON Cross Reference
NMS256
256K RAM HM62256
MK6264
51256SL
TC5565 "cross reference"
MN44256
M5M5256
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STATIC RAM 8464
Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116/
L6116L
L7C183
CY7C183
L7C184
STATIC RAM 8464
IMS1433
SSM6116
IMS1630
SSM6171
SSM7188
hitachi selection guide
SSM7164
hm6264
ic 6116 ram
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Untitled
Abstract: No abstract text available
Text: • b24Tfl2S 0 0 2 4 2 1 4 bb? ■ M I T I M 5 M MITSUBISHILSIs 5 2 5 6 B P ,F P ,K P - 7 0 ,- 8 5 ,- 1 0 ,- 1 2 ,-1 5 ,- 7 0 L ,- 8 5 L , - 1 0 L ,- 1 2 L ,- 1 5 L ,- 7 0 L L ,- 8 5 L L ,- 1 0 L L ,- 1 2 L L ,- 1 5 L L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM
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b24Tfl2S
262144-BIT
32768-WORD
M5M5256BP,
262144-bit
32768-words
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M5M5256
Abstract: No abstract text available
Text: MITSUBISHI MEMORY/ASIC bl E T> • bEHTñaS D01fl543 T71 *11111 MITSUBISHI LSIs M5M5256BP,BFP,BKP -10L-W, -12L-W, -15L-W -10LL-W,-12LL-W,-15LL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This M 5M 5256BP3FP3K P is a 262,144-bit CMOS static RAM
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D01fl543
M5M5256BP
-10L-W,
-12L-W,
-15L-W
-10LL-W
-12LL-W
-15LL-W
262144-BIT
32768-WORD
M5M5256
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M5M5256-70L
Abstract: M5M5256 M5MS256-15LL M5M5256-70
Text: MITSUBISHI LS Is M5M5256BP,FP,KP-70,-85,-10,-12,-15,-70Lr 85L, -10L,-12L,-15L,-70LL,-85LL,-10LL,-12LL,-15LL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M 5M 5256B P, FP, KP is a 2 6 2 1 4 4 -b it CMOS static PIN CONFIGURATION (TOP VIEW)
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M5M5256BP
KP-70
-70Lr
-70LL
-85LL
-10LL
-12LL
-15LL
262144-BIT
32768-WORD
M5M5256-70L
M5M5256
M5MS256-15LL
M5M5256-70
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH51208TNA-85L,-10L,-12L,-15L/ MH51208TNA-85H,-10H,-12H,-15H 4 1 9 4 3 0 4 -B IT 5 2 4 2 8 8 -W 0 R D B Y 8*BIT CM0S STATIC RAM MODULE DESCRIPTION T h e M H 5 1 2 0 8 T N A is a 4 1 9 4 3 0 4 bits C M O S s tatic R A M PIN CONFIGURATION (TOP VIEW)
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MH51208TNA-85L
-15L/
MH51208TNA-85H
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M5M5258-70
Abstract: M5M5256 M5M5256BP m5m5256bfp M5M5256-10L M5M5256-70 BKP-12 5256BP BKP-85 m5m5256 25
Text: MITSUBISHI LSIs M5M5256BP,BFP,BKP-70,-85,-10,-12,-15,-70L, •85L,-10L,-12L,-15L,-70LL,-85LL,-10LL,-12LL,-15LL 2 6 2 144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This M5M5256BP, BFP, BKP is a 262,144-bit CMOS static
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M5M5256BP,
BKP-70,
-70LL,
-85LL,
262144-BIT
32768-WORD
144-bit
768-words
M5M5258-70
M5M5256
M5M5256BP
m5m5256bfp
M5M5256-10L
M5M5256-70
BKP-12
5256BP
BKP-85
m5m5256 25
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