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    Panasonic Electronic Components DMA904010R

    TRANS 2PNP 50V 0.1A SSMINI6
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    DMA904010R Reel 8,000
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    MA9040 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA9040 GEC Plessey Semiconductors SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS Original PDF

    MA9040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    figure of full adder circuit using nor gates

    Abstract: tristate buffer cmos LAH3 carry select adder 16 bit using fast adders full adder circuit using nor gates microprocessor radiation hard M2909
    Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MA9000 Series


    Original     		PDF MA9000 DS3598-3 figure of full adder circuit using nor gates tristate buffer cmos LAH3 carry select adder 16 bit using fast adders full adder circuit using nor gates microprocessor radiation hard M2909

    full adder circuit using nor gates

    Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
    Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    Original     		PDF MA9000 DS3598-3 full adder circuit using nor gates D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16

    LAH3

    Abstract: LAH4 MA9000 Inverter INVC fpk6
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’


    Original     		PDF MA9000 DS3598-3 LAH3 LAH4 Inverter INVC fpk6

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the


    OCR Scan     		PDF DS3598-3 MA9000 D0242bl 3Sx24nnnxxxxx 37bflS22 00242b2

    M2909

    Abstract: No abstract text available
    Text: GEC PLESSEY S 1M I C \ 1) 1; ( . MA9000 Series Silicon-on-Sapphire Radiation Hard Gate Arrays ] () K > S21300FDS Issue 1.1 November 1990 Features Cell Unit • Radiation Hard to 1MRad(Si) V DD ^ I • High SEU immunity, latch-up free • Double-Level-Metal CMOS/SOS Technology


    OCR Scan     		PDF MA9000 S21300FDS 60MHz A9000Series_ MA9007 MA9024 MA9040 3Sx24nnnxxxxx M2909