MAD00031EEM Search Results

MAD00031EEM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MN101C29D Type MN101C29D ROM x× 8-bit 64 K RAM (×× 8-bit) 1.5 K Package Minimum Instruction Execution Time LQFP080-P-1414A *Lead-free 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) Interrupts • RESET • Watchdog • External 0 • External 1 • External 2 • External 3 • External 4 • External 5	Original	PDF	MN101C29D MN101C29D LQFP080-P-1414A MAD00031EEM
Untitled Abstract: No abstract text available Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)1 125 µs (at 2.0 V to 5.5 V, 32 kHz)2 1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.	Original	PDF	MN101D03D MN101D03D LQFP080-P-1414A
Untitled Abstract: No abstract text available Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)1 125 µs (at 2.0 V to 5.5 V, 32 kHz)2 *1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.	Original	PDF	MN101D03D MN101D03D LQFP080-P-1414A
LQFP080-P-1414A Abstract: MN101D03D MN101DF03D P8276 Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A Lead-free 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)1 125 µs (at 2.0 V to 5.5 V, 32 kHz)2 1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.	Original	PDF	MN101D03D LQFP080-P-1414A LQFP080-P-1414A MN101D03D MN101DF03D P8276
Untitled Abstract: No abstract text available Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)1 125 µs (at 2.0 V to 5.5 V, 32 kHz)2 1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.	Original	PDF	MN101D03D MN101D03D LQFP080-P-1414A MAD00031EEM PX-ICE101C PX-PRB101D03-LQFP080-P-1414A MN101DP03FAL
P8276 Abstract: No abstract text available Text: MN101D03D Type MN101D03D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package LQFP080-P-1414A Lead-free 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz)1 125 µs (at 2.0 V to 5.5 V, 32 kHz)2 1 The lower limit for operation guarantee for flash memory built-in type is 4.5 V.	Original	PDF	MN101D03D LQFP080-P-1414A P8276