cmos ic
Abstract: AN48800A hall smd ic cmos smd hall SMD Hall sensors
Text: Hall ICs AN48800A Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.40+0.10 -0.05 0.10 The AN48800A is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our
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AN48800A
AN48800A
cmos ic
hall smd
ic cmos
smd hall
SMD Hall sensors
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hall smd
Abstract: AN48800A cmos ic smd hall
Text: Hall ICs AN48800A Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.40+0.10 -0.05 0.10 The AN48800A is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our
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AN48800A
AN48800A
hall smd
cmos ic
smd hall
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Untitled
Abstract: No abstract text available
Text: Hall ICs AN48800A Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.40+0.10 -0.05 0.10 The AN48800A is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our
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AN48800A
AN48800A
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AN4883
Abstract: mini inverter smd AN48830B magnetic sensor matsushita magnetic sensor matsua
Text: AN48830B Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity 0.225 0.22+0.10 −0.05 4 M Di ain sc te on na tin nc ue e/ d The AN48830B is a Hall IC a magnetic sensor which has 2 times
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AN48830B
AN48830B
AN4883
mini inverter smd
magnetic sensor matsushita
magnetic sensor matsua
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smd hall
Abstract: AN48800A E hall sensor smd 4 pin hall smd 4 pin
Text: Hall ICs AN48800A Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.65±0.15 Unit: mm 1.45 • Overview 0.40+0.10 -0.05 M Di ain sc te on na tin nc ue e/ d 0.10 M The AN48800A is a Hall IC (a magnetic sensor) which
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AN48800A
AN48800A
smd hall
E hall sensor smd 4 pin
hall smd 4 pin
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AN48830B
Abstract: hall sensor smd 80 L
Text: AN48830B Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity 0.225 0.22+0.10 −0.05 4 1 0.225 The AN48830B is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one threehundredth compared with our conventional one.
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AN48830B
AN48830B
hall sensor smd 80 L
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Untitled
Abstract: No abstract text available
Text: AN48830B Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity 0.225 0.22+0.10 −0.05 4 1 0.225 2 3 0.65 0.65 1.30±0.10 2.00±0.10 0.32±0.10 0 to 0.10 0.80±0.10 0.11+0.10 −0.05 The AN48830B is a Hall IC a magnetic sensor which has 2 times
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AN48830B
AN48830B
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AN48820A
Abstract: SMD Hall AN488-20
Text: Hall ICs AN48820A Low current consumption, high sensitivity CMOS Hall IC Operate by the value of magnetic flux density, regardless of polarity 1.45 0.40+0.10 -0.05 0.10 M The AN48820A is a Hall IC (a magnetic sensor) which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our
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AN48820A
AN48820A
90-ms
SMD Hall
AN488-20
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SMD Hall C
Abstract: hall smd smd hall AN48810B hall switch ignition
Text: Hall ICs AN48810B Low current consumption, high sensitivity CMOS Hall IC One-way magnetic field operation 0.225 0.13 M 4 1 2 3 0.225 M Di ain sc te on na tin nc ue e/ d 2.10±0.10 The AN48810B is a Hall IC a magnetic sensor which has 2 times or more sensitivity and a low current consumption of about one three-hundredth compared with our
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AN48810B
AN48810B
SMD Hall C
hall smd
smd hall
hall switch ignition
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4G2 hall
Abstract: hall sensor 40 L
Text: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 (0.65) 1 0.4+0.1 –0.05 (1.45) (0.8) • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment
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OH10009
OH009)
4G2 hall
hall sensor 40 L
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4G2 hall
Abstract: OH10003 OH003 oh-003
Text: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 1.5+0.2 –0.3 4 R(0.5) (1.45) (0.8) 0 to 0.1 • Various hall motor (VCR, phonograph, VD, CD, and FDD)
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OH10003
OH003)
4G2 hall
OH10003
OH003
oh-003
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Untitled
Abstract: No abstract text available
Text: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 M Di ain sc te on na tin nc ue e/ d • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
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OH10010
OH010)
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OH008
Abstract: OH10008
Text: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 M Di ain sc te on na tin nc ue e/ d 0.6±0.1 4 0 to 0.15 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo
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OH10008
OH008)
OH008
OH10008
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Untitled
Abstract: No abstract text available
Text: MIS-DG60C153B SPECIFICATION FOR IC CARD READER Electric lock type MODEL Z U - 9 8 3 3 0 S E A AUG . 2 0 0 4 Date : Signature for approval Read and agreed by MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. MATSUSHITA INDUSTRIAL INFORMATION EQUIPMENT CO., LTD. OSAKA JAPAN
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MIS-DG60C153B
MES-DG60C153A
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TLE4966-2K
Abstract: marking code samsung SMD ABMT MICRON oneNAND
Text: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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TLE4966-2K
GPX09300
HLG09283
TLE4966-2K
marking code samsung SMD
ABMT
MICRON oneNAND
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TLE5009
Abstract: TLe5011 TLE5012 magnet core Angle Sensors "Angle Sensors" sun Sensor satellite Parameters of cylindrical permanent magnet ARM926EJ-S C166
Text: Angle Sensors GMR-Based Angular Sensors Magnet Design TLE5009 TLE5011 TLE5012 Application Note Rev. 1.0, 2010-04-12 ATV SC Edition 2010-04-12 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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TLE5009
TLE5011
TLE5012
TLE5009
TLe5011
TLE5012
magnet core
Angle Sensors
"Angle Sensors"
sun Sensor satellite
Parameters of cylindrical permanent magnet
ARM926EJ-S
C166
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TLE4966
Abstract: Infrared sensor TSOP 1738 AEA03645 samsung bluetooth ARM926EJ-S C166 MIPS32 Infineon automotive semiconductor process technology sharp mipi marking code samsung SMD
Text: TLE4966-3K High Sensitivity Automotive Hall Switch with direction detection Datasheet Rev.1.0, 2010-09-20 Sense & Control Edition 2010-09-20 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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TLE4966-3K
GPX09300
HLG09283
TLE4966
Infrared sensor TSOP 1738
AEA03645
samsung bluetooth
ARM926EJ-S
C166
MIPS32
Infineon automotive semiconductor process technology
sharp mipi
marking code samsung SMD
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DN6853 hall
Abstract: DN6853
Text: Hall ICs DN6853 Switch type, Wide operating supply voltage range VCC = 3.6 V to 16 V Alternating magnetic field operation Unit: mm (1.0) 1 2 3 Note) The package of this product will be changed to lead-free type (SSIP003-P-0000H). See the new package dimensions section later of this
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DN6853
SSIP003-P-0000H)
SSIP003-P-0000A
DN6853 hall
DN6853
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dn6852 circuit diagram
Abstract: DN6852
Text: Hall ICs DN6852 Switch type, Wide operating supply voltage range VCC = 3.6 V to 16 V One-way magnetic field operation Unit: mm (1.0) 1 2 3 1 : VCC 2 : GND 3 : Output Note) The package of this product will be changed to lead-free type (SSIP003-P-0000H). See the
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DN6852
SSIP003-P-0000H)
SSIP003-P-0000A
dn6852 circuit diagram
DN6852
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DN6849UBS
Abstract: No abstract text available
Text: Hall ICs DN6849UBS Hall IC for alternative magnetic field • Overview Unit: mm 3.0±0.3 0.6±0.2 1.5±0.3 0.95±0.2 0.4±0.2 3.0±0.3 5.4±0.4 +0.15 0.4±0.15 3 0.2 –0.05 0.1±0.1 2 • High sensitivity and low drift • Stable temperature characteristics due to the built-in temperature compensation circuit
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DN6849UBS
DN6849UBS
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DN6849SE
Abstract: DN6849 DN6849S
Text: Hall ICs DN6849/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN6849 2.0±0.2 (1.0) (0.7) 4.0±0.2 (5°) (1.0) • Overview 0.55±0.15 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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DN6849/SE/S
DN6849
DN6849SE
DN6849
DN6849S
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DN6847SE
Abstract: DN6847 DN6847S
Text: Hall ICs DN6847/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN6847 2.0±0.2 (1.0) (0.7) 4.0±0.2 (5°) (1.0) • Overview 0.55±0.15 0.8±0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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DN6847/SE/S
DN6847
DN6847SE
DN6847
DN6847S
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Untitled
Abstract: No abstract text available
Text: Hall ICs DN6852 Switch type, Wide operating supply voltage range VCC = 3.6 V to 16 V One-way magnetic field operation Unit: mm • Overview 4.0±0.2 (5°) 10.5±0.5 0.8±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo
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DN6852
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Untitled
Abstract: No abstract text available
Text: Hall ICs DN6851 Switch type, Wide operating supply voltage range VCC = 3.6 V to 16 V Alternating magnetic field operation Unit: mm 2.0±0.2 (1.0) 4.0±0.2 0.8±0.1 • Wide supply voltage range of 3.6 V to 16 V • Alternating magnetic field operation • TTL and MOS IC are directly drivable by the output.
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DN6851
SSIP003-P-0000A
SSIP003-P-0000A
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