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    str 6707

    Abstract: TSSOP8 texas BP317 BSH301
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES • 40 mΩ on-state resistance at 2.5 V gate drive


    Original
    BSH301 MAM423 OT530) OT530 SCA63 135002/00/01/pp5 str 6707 TSSOP8 texas BP317 BSH301 PDF